MITSUBISHI LSIs
MH1M365CXJ/CNXJ-5,-6,-7
HYPER PAGE MODE 37748736-BIT ( 1048576-WORD BY 36-BIT ) DYNAMIC RAM
PIN CONFIGURATION (TOP VIEW)
DESCRIPTION
The MH1M365CXJ/CNXJ is 1048576-word x 36-bits dynamic
RAM. This consists of two industry standard 1M x 16 dynamic
RAMs in SOJ and one industry 1M x 4 dyanmic RAMs in SOJ.
The mounting of SOJ on a single in-line package provides any
application where high densities and large quantities of memory
are required. This is a socket-type memory module,suitable for
easy interchange or addition of modules.
[Single side]
1.Vss
2.DQ0
3.DQ16
4.DQ1
5.DQ17
6.DQ2
37.MP1
38.MP3
39.Vss
40.CAS0
41.CAS2
42.CAS3
43.CAS1
44.RAS0
45.NC
46.NC
47.W
48.NC
49.DQ8
50.DQ24
51.DQ9
52.DQ25
53.DQ10
54.DQ26
55.DQ11
FEATURES
Type name
MH1M365CXJ/CNXJ-5
MH1M365CXJ/CNXJ-6
MH1M365CXJ/CNXJ-7
RAS
CAS
access access
time
time
(max.ns) (max.ns)
Address Cycle
Power
access
dissipa-
time
time
tion
(max.ns) (min.ns) (typ.mW)
7.DQ18
8.DQ3
11.NC
10.Vcc
11.NC
12.A0
13.A1
14.A2
15.A3
50
60
70
13
15
20
25
30
35
90
110
130
2120
1750
1520
72pin single in-line package
Single 5.0V ± 10% supply
Low stand-by power dissipation
16.5mW (Max)
Low operating power dissipation
MH1M365CXJ/CNXJ- 5
MH1M365CXJ/CNXJ- 6
MH1M365CXJ/CNXJ- 7
16.A4
17.A5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
CMOS lnput level
2.67W (Max)
2.20W (Max)
1.90W (Max)
18.A6
19.NC
20.DQ4
21.DQ20
22.DQ5
Hyper-page mode , RAS-only refresh , CAS before RAS
refresh, Hidden refresh capabilities
All inputs and output directly TTL compatible
1024 refresh cycles every 16.4ms (A
0
~ A
9
)
MH1M365CXJ
MH1M365CNXJ
Gold plating
Nickel+solder plating
23.DQ21
24.DQ6
25.DQ22
26.DQ7
27.DQ23
28.A7
29.NC
APPLICATION
Main memory unit for computers, Microcomputer memory,
Refresh memory for CRT
30.Vcc
31.A8
32.A9
33.NC
34.RAS2
35.MP2
36.MP0
56.DQ27 37
38
57.DQ12 39
40
41
58.DQ28 42
43
59.Vcc
44
45
60.DQ29 46
47
61.DQ13 48
49
62.DQ30 50
51
63.DQ14 52
53
64.DQ31 54
55
56
65.DQ15 57
58
66.NC
59
60
67.PD1 61
62
68.PD2 63
64
69.PD3 65
66
70.PD4 67
68
69
71.NC
70
71
72.Vss
72
Outline 72N9K-C
PD1
PD2
PD3
PD4
-5
Vss
Vss
Vss
Vss
-6
Vss
Vss
NC
NC
-7
Vss
Vss
Vss
NC
NC: NO CONNECTION
MIT-DS-0084-1.0
MITSUBISHI
ELECTRIC
( 1 / 15 )
Oct.15.96
MITSUBISHI LSIs
MH1M365CXJ/CNXJ-5,-6,-7
HYPER PAGE MODE 37748736-BIT ( 1048576-WORD BY 36-BIT ) DYNAMIC RAM
FUNCTION
in addition to normal read, write, a number of other
functions, e.g., hyper page mode, RAS only refresh,
The input conditions for each are shown in Table 1.
Table 1 Input conditions for each mode
Inputs
Operation
RAS
Read
Early write
RAS-only refresh
Hidden refresh
CAS before RAS refresh
Standby
ACT
ACT
ACT
ACT
ACT
NAC
CAS
ACT
ACT
NAC
ACT
ACT
DNC
W
NAC
ACT
DNC
NAC
DNC
DNC
Row
address
APD
APD
APD
APD
DNC
DNC
Column
address
APD
APD
DNC
DNC
DNC
DNC
Input/Output
Input
OPN
VLD
DNC
OPN
DNC
DNC
Output
VLD
OPN
OPN
VLD
OPN
OPN
Note : ACT : active, NAC : nonactive, DNC : don' t care, VLD : valid, IVD : Invalid,APD : applied, OPN : open
BLOCK DIAGRAM
DQ1 DQ3 DQ5 DQ7
DQ9 DQ11 DQ13 DQ15
MP0
DQ0 DQ2 DQ4 DQ6
DQ8 DQ10 DQ12 DQ14
2 4 6 8 20 22 24 26
49 51 53 55 57 61 63 65 36
MP1
37
MP2
35
MP3
38
DQ17 DQ19 DQ21 DQ23 DQ25 DQ27 DQ29 DQ31
DQ16 DQ18 DQ20 DQ22 DQ24 DQ26 DQ28 DQ30
3 5 7 9 21 23 25 27
50 52 54 56 58 60 62 64
LDATA
UDATA
0
1
2
3
LDATA
UDATA
M5M418165CJ
LCAS
UCAS
M5M44505CJ
0
1
2
3
M5M418165CJ
LCAS
UCAS
44
RAS0
40
CAS0
43
CAS1
12 13 14 15 16 17 18 28 31 32
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9
34
RAS2
41
CAS2
42
CAS3
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MITSUBISHI
ELECTRIC
( 2 / 15 )
Oct.15.96
MITSUBISHI LSIs
MH1M365CXJ/CNXJ-5,-6,-7
HYPER PAGE MODE 37748736-BIT ( 1048576-WORD BY 36-BIT ) DYNAMIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Vcc
VI
V0
I0
Pd
Topr
Tstg
Supply voltage
Input voltage
Output voltage
Output current
Power dissipation
Operating temperature
Storage temperature
Ta=25 C
With respect to Vss
Parameter
Conditions
Ratings
-1 ~ 7
-1 ~ 7
-1 ~ 7
50
3000
0 ~ 70
-40 ~ 125
Unit
V
V
V
mA
mW
C
C
RECOMMENDED OPERATING CONDITIONS
Symbol
Vcc
Vss
V
IH
V
IL
Supply voltage
Supply voltage
High-level input voltage, all inputs
Low-level input voltage, all inputs
Parameter
(Ta=0 ~ 70 °C, unless otherwise noted)
(Note 1)
Limits
Unit
V
V
V
V
Min
4.5
0
2.4
-1
Nom
5.0
0
Max
5.5
0
6.0
0.8
Note 1 : All voltage values are with respect to Vss
ELECTRICAL CHARACTERISTICS
Symbol
V
OH
V
OL
I
OZ
I
I
Parameter
High-level output voltage
Low-level output voltage
Off-state output current
Input current
Average supply current
from Vcc operating
(Note 3,4,5)
I
CC2
(Ta=0 ~ 70°C, Vcc=5.0V ± 10%, Vss=0V, unless otherwise noted)
(Note 2)
Test conditions
I
OH
=-5.0mA
I
OL
=4.2mA
Q floating 0V
≤
V
OUT
≤
5.5V
0V
≤
V
IN
≤
6 V, Other inputs pins=0V
Limits
Min
2.4
0
-10
-30
Typ
Max
Vcc
0.4
10
30
485
400
345
RAS= CAS =V
IH,
output open
RAS= CAS
≥
Vcc - 0.2 V
RAS cycling, CAS= V
IH
t
RC
=min.
output open
6
3
485
400
345
455
360
305
465
385
335
mA
mA
mA
mA
mA
Unit
V
V
µA
µA
MH1M365C
MH1M365C
MH1M365C
-5
-6
-7
I
CC1 (AV)
RAS, CAS cycling
t
RC
=t
WC
=min.
output open
Supply current from Vcc , stand-by (Note 6)
Average supply current
from Vcc refreshing
(Note 3,5)
Average supply current
from Vcc
Hyper-Page-Mode
(Note 3,4,5)
Average supply current
from Vcc
CAS before RAS refresh
mode
(Note 3)
MH1M365C
MH1M365C
MH1M365C
MH1M365C
MH1M365C
MH1M365C
MH1M365C
MH1M365C
MH1M365C
-5
-6
-7
-5
-6
-7
-5
-6
-7
I
CC3 (AV)
I
CC4(AV)
RAS=V
IL,
CAS cycling
t
PC
=min.
output open
I
CC6(AV)
CAS before RAS refresh cycling
t
RC
=min.
output open
Note 2: Current flowing into an IC is positive, out is negative.
3: Icc1 (AV), Icc3 (AV) and Icc4 (AV) are dependent on cycle rate. Maximum current is measured at the fastest cycle rate.
4: Icc1 (AV) and Icc4 (AV) are dependent on output loading. Specified values are obtained with the output open.
5: Column Address can be changed once or less while RAS=V
IL
and CAS=V
IH
.
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ELECTRIC
( 3 / 15 )
Oct.15.96
MITSUBISHI LSIs
MH1M365CXJ/CNXJ-5,-6,-7
HYPER PAGE MODE 37748736-BIT ( 1048576-WORD BY 36-BIT ) DYNAMIC RAM
CAPACITANCE
(Ta=0 ~ 70 °C, Vcc=5.0V ± 10%, Vss=0V, unless
Symbol
C
I (A)
C
I (W)
C
I (RAS)
C
I (CAS)
C
I / O
Parameter
Input capacitance,address inputs
Input capacitance, write control input
Input capacitance, RAS input
Input capacitance, CAS input
Input/Output capacitance, data ports
V
I
=Vss
otherwise noted)
Test conditions
Limits
Min
Typ
Max
30
36
36
29
22
Unit
pF
pF
pF
pF
pF
f=1MH
Z
Vi=25mVrms
SWITCHING CHARACTERISTICS
Symbol
(Ta=0 ~ 70 °C, Vcc = 5V ± 10%, Vss=0V, unless otherwise noted , see notes 6,14,15)
Limits
Parameter
Access time from CAS
Access time from RAS
Column address access time
Access time from CAS precharge
Output hold time from CAS
(Note 13)
Output hold time from RAS
Output low impedance time from CAS low (Note 7)
(Note 12)
Output disable time after WE high
Output disable time after CAS high
Output disable time after RAS high
(Note 12,13)
(Note 12,13)
(Note 7,8)
(Note 7,9)
(Note 7,10)
(Note 7,11)
MH1M365C -5
Min
Max
13
50
25
30
5
5
5
13
13
13
MH1M365C -6
Min
Max
15
60
30
35
5
5
5
15
15
15
MH1M365C -7
Min
Max
20
70
35
40
5
5
5
20
20
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
CAC
t
RAC
t
AA
t
CPA
t
OHC
t
OHR
t
CLZ
t
WEZ
t
OFF
t
REZ
Note 6: An initial pause of 500µs is required after power-up followed by a minimum of eight initialization cycles (any combination of cycles
containing a RAS clock such as RAS-Only refresh).
Note the RAS may be cycled during the initial pause . And any 8 RAS or RAS/CAS cycles are required after prolonged periods
(greater than 16.4 ms) of RAS inactivity before proper device operation is achieved.
7: Measured with a load circuit equivalent to VOH=2.4V(IOH=-5mA) / VOL=0.4V(IOL=-4.2mA) load 100pF.
The reference levels for measuring of output signal are 2.0V(VOH) and 0.8V(VOL).
8: Assumes that t
RCD
≥
t
RCD(max)
and t
ASC
≥
t
ASC(max)
and t
CP
≥t
CP(max).
9: Assumes that t
RCD
≤
t
RCD(max)
and t
RAD
≤
t
RAD(max).
If t
RCD
or t
RAD
is greater than the maximum recommended value shown in this table,
t
RAC
will increase by amount that t
RCD
exceeds the value shown.
10: Assumes that t
RAD
≥
t
RAD(max)
and t
ASC
≤
t
ASC(max).
11: Assumes that t
CP
≤
t
CP(max)
and t
ASC
≥
t
ASC(max).
12: t
WEZ(max) ,
t
OFF(max)
and t
REZ(max)
defines the time at which the output achieves the high impedance state (
and is not reference to V
OH(min)
or V
OL(max).
13: Output is disabled after both RAS and CAS go to high.
I
OUT
≤
I ± 10 µA I)
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ELECTRIC
( 4 / 15 )
Oct.15.96
MITSUBISHI LSIs
MH1M365CXJ/CNXJ-5,-6,-7
HYPER PAGE MODE 37748736-BIT ( 1048576-WORD BY 36-BIT ) DYNAMIC RAM
TIMING REQUIREMENTS (For Read, Write, Refresh, and Hyper-Page Mode Cycles)
(Ta=0 ~ 70°C, Vcc = 5V ± 10%, Vss=0V, unless otherwise noted See notes 14,15)
Limits
MH1M365C -6
Min
40
37
20
5
0
10
25
10
15
0
0
10
10
0
15
15
50
1
50
13
30
45
Max
16.4
50
20
5
0
10
15
0
0
10
10
0
20
20
1
50
13
35
50
Symbol
Parameter
Refresh cycle time
RAS high pulse width
Delay time, RAS low to CAS low
Delay time, CAS high to RAS low
Delay time, RAS high to CAS low
CAS high pulse width
Column address delay time from RAS low
MH1M365C -5
Min
Max
16.4
30
(Note16)
18
5
0
8
(Note17)
(Note18)
13
0
0
8
8
(Note19)
(Note20)
(Note20)
(Note21)
0
13
13
1
MH1M365C -7
Min
Max
16.4
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
t
REF
t
RP
t
RCD
t
CRP
t
RPC
t
CPN
t
RAD
t
ASR
t
ASC
t
RAH
t
CAH
t
DZC
t
RDD
t
CDD
t
T
Row address setup time before RAS low
Column address setup time before CAS low
Row address hold time after RAS low
Column address hold time after CAS low
Delay time, data to CAS low
Delay time, RAS high to data
Delay time, CAS high to data
Transition time
Note 14: The timing requirements are assumed t
T
=3ns.
15: V
IH(min)
and V
IL(max)
are reference levels for measuring timing of input signals.
16: t
RCD(max)
is specified as a reference point only. If t
RCD
is less than t
RCD(max),
access time is t
RAC.
If t
RCD
is greater than t
RCD(max),
access
time is controlled exclusively by t
CAC
or t
AA.
17: t
RAD(max)
is specified as a reference point only. If t
RAD
≤
t
RAD(max)
and t
ASC
≤
t
ASC(max),
access time is controlled exclusively by t
AA.
18: t
ASC(max)
is specified as a reference point only. If t
RCD
≥
t
RCD(max)
and t
ASC
≥
t
ASC(max),
access time is controlled exclusively by t
CAC.
19: t
DZC
must be satisfied.
20: Either t
RDD
or t
CDD
or t
ODD
must be satisfied.
21: t
T
is measured between V
IH(min)
and V
IL(max).
Read and Refresh Cycles
Symbol
Parameter
Read cycle time
RAS low pulse width
CAS low pulse width
CAS hold time after RAS low
RAS hold time after CAS low
Read Setup time before CAS low
Read hold time after CAS high
Read hold time after RAS high
Column address to RAS hold time
Column address to CAS hold time
(Note 22)
(Note 22)
MH1M365C
Min
90
50
8
40
13
0
0
10
25
13
10000
10000
-5
Limits
MH1M365C
Min
110
60
10
48
15
0
0
10
30
18
10000
10000
-6
MH1M365C
Min
130
70
13
55
20
0
0
10
35
23
10000
10000
-7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Max
Max
Max
t
RC
t
RAS
t
CAS
t
CSH
t
RSH
t
RCS
t
RCH
t
RRH
t
RAL
t
CAL
Note 22: Either t
RCH
or t
RRH
must be satisfied for a read cycle.
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ELECTRIC
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