MH16S64APHB-6 datasheet, PDF - EEWORLD Datasheet

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MH16S64APHB-6: Description1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM; Categorystorage storage; File Size699KB，55 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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MH16S64APHB-6 Overview

1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM

MH16S64APHB-6 Parametric

Parameter Name	Attribute value
Maker	Mitsubishi
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknow
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
memory density	1073741824 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	168
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
self refresh	YES
Maximum standby current	0.008 A
Maximum slew rate	1.28 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL

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Preliminary Spec.

Some contents are subject to change without notice.

MITSUBISHI LSIs

MH16S64APHB -6,-7,-8

1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM

DESCRIPTION

The MH16S64APHB is 16777216 - word by 64-bit

Synchronous DRAM module. This consists of eight

industry standard 16Mx8 Synchronous DRAMs in

TSOP and one industory standard EEPROM in

TSSOP.

The mounting of TSOP on a card edge Dual

Inline package provides any application where

high densities and large quantities of memory are

required.

This is a socket type - memory modules, suitable

for easy interchange or addition of modules.

85pin

1pin

94pin

95pin

10pin

11pin

FEATURES

Frequency

-6

-7

-8

133MHz

100MHz

CLK Access Time

(Component SDRAM)

5.4ns(CL=3)

6.0ns(CL=2)

6.0ns(CL=3)

124pin

125pin

40pin

41pin

Utilizes industry standard 16M x 8 Sy nchronous DRAMs

TSOP and industry standard EEPROM in TSSOP

168-pin (84-pin dual in-line package)

single 3.3V±0.3V power supply

Max. Clock frequency -6:133MHz,-7,8:100MHz

Fully synchronous operation referenced to clock

rising edge

4 bank operation controlled by BA0,1(Bank Address)

/CAS latency- 2/3(programmable)

Burst length- 1/2/4/8/Full Page(programmable)

Burst type- sequential / interleave(programmable)

Column access - random

Auto precharge / All bank precharge controlled

by A10

Auto refresh and Self refresh

4096 refresh cycle /64ms

LVTTL Interface

Discrete IC and module design conform to

PC100/PC133 specification.

168pin

84pin

APPLICATION

PC main memory

MIT-DS-0377-0.1

MITSUBISHI

ELECTRIC

( 1 / 55 )

17.Mar.2000

MH16S64APHB-6 Related Products

	MH16S64APHB-6	MH16S64APHB-8	MH16S64APHB-7
Description	1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM	1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM	1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM
Maker	Mitsubishi	Mitsubishi	Mitsubishi
package instruction	DIMM, DIMM168	DIMM, DIMM168	DIMM, DIMM168
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
access mode	SINGLE BANK PAGE BURST	FOUR BANK PAGE BURST	SINGLE BANK PAGE BURST
Maximum access time	5.4 ns	6 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	100 MHz	100 MHz
I/O type	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168	R-XDMA-N168
memory density	1073741824 bi	1073741824 bi	1073741824 bi
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64	64
Number of functions	1	1	1
Number of ports	1	1	1
Number of terminals	168	168	168
word count	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C
organize	16MX64	16MX64	16MX64
Output characteristics	3-STATE	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096
self refresh	YES	YES	YES
Maximum standby current	0.008 A	0.008 A	0.008 A
Maximum slew rate	1.28 mA	1.28 mA	1.28 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO
technology	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL
Parts packaging code	DIMM	-	DIMM
Contacts	168	-	168

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