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MGY25N120

Description
Insulated Gate Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size114KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MGY25N120 Overview

Insulated Gate Bipolar Transistor

MGY25N120 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-264
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging codeCASE 340G-02
Reach Compliance Code_compli
Other featuresHIGH SPEED
Maximum collector current (IC)38 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE
Gate emitter threshold voltage maximum8 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-264AA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)212 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)876 ns
Nominal on time (ton)214 ns
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MGY25N120/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage blocking capability. Short circuit rated IGBT’s are specifical-
ly suited for applications requiring a guaranteed short circuit
withstand time. Fast switching characteristics result in efficient
operation at high frequencies.
Industry Standard High Power TO–264 Package (TO–3PBL)
High Speed Eoff: 216
m
J/A typical at 125°C
High Short Circuit Capability – 10
m
s minimum
Robust High Voltage Termination
Data Sheet
MGY25N120
Motorola Preferred Device
IGBT IN TO–264
25 A @ 90°C
38 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
C
G
G
E
C
E
CASE 340G–02
STYLE 5
TO–264
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
— Continuous @ TC = 90°C
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20
Ω)
Thermal Resistance — Junction to Case – IGBT
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Symbol
VCES
VCGR
VGE
IC25
IC90
ICM
PD
TJ, Tstg
tsc
R
θJC
R
θJA
TL
Value
1200
1200
±20
38
25
76
212
1.69
– 55 to 150
10
0.6
35
260
10 lbf
S
in (1.13 N
S
m)
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
m
s
°C/W
°C
Designer’s is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
©
Motorola IGBT Device
Motorola, Inc. 1997
Data
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