MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
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by MGW14N60ED/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. Co–packaged IGBTs save space, reduce assembly
time and cost. This new E–series introduces an energy efficient,
ESD protected, and short circuit rugged device.
•
Industry Standard TO–247 Package
•
High Speed: Eoff = 60
m
J/A typical at 125°C
•
High Voltage Short Circuit Capability – 10
m
s minimum at
125°C, 400V
•
Low On–Voltage — 2.0V typical at 10A, 125°C
•
Soft Recovery Free Wheeling Diode is included in the Package
•
Robust High Voltage Termination
•
ESD Protection Gate–Emitter Zener Diodes
C
™
Data Sheet
MGW14N60ED
IGBT IN TO–247
14 A @ 90°C
18 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
ON–VOLTAGE
G
G
C
E
CASE 340K–01
STYLE 4
TO–247 AE
E
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
Collector Current
— Continuous @ TC = 90°C
Collector Current
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20
Ω)
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance
— Junction to Case – Diode
Thermal Resistance
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Symbol
VCES
VCGR
VGE
IC25
IC90
ICM
PD
TJ, Tstg
tsc
R
θJC
R
θJC
R
θJA
TL
Value
600
600
±
20
18
14
28
112
0.89
– 55 to 150
10
1.1
1.9
45
260
10 lbf
S
in (1.13 N
S
m)
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
m
s
°C/W
°C
Designer’s is a trademark of Motorola, Inc.
©
Motorola IGBT Device
Motorola, Inc. 1997
Data
1
MGW14N60ED
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25
µAdc)
Temperature Coefficient (Positive)
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGE =
±
20 Vdc, VCE = 0 Vdc)
ON CHARACTERISTICS(1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 5.0 Adc)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 10 Adc)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Switching Loss
Total Switching Loss
Gate Charge
(VCC = 360 Vdc IC = 10 Adc
Vdc,
Adc,
VGE = 15 Vdc)
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 5.0 Adc)
(IEC = 5.0 Adc, TJ = 125°C)
(IEC = 10 Adc)
(1) Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
VFEC
—
—
1.7
1.6
1.3
2.0
1.9
—
2.3
(continued)
Vdc
(VCC = 360 Vd IC = 10 Ad
Vdc,
Adc,
VGE = 15 Vdc, L = 300
m
H
Vd
H,
RG = 20
Ω,
TJ = 125°C)
125 C)
Energy losses include “tail”
(VCC = 360 Vd IC = 10 Ad
Vdc,
Adc,
VGE = 15 Vdc, L = 300
m
H
Vd
H,
RG = 20
Ω)
Energy losses include “tail”
td(on)
tr
td(off)
tf
Eoff
Eon
Ets
td(on)
tr
td(off)
tf
Eoff
Eon
Ets
QT
Q1
Q2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
38
40
120
204
0.35
0.27
0.62
32
30
208
212
0.63
0.40
1.03
57
12
25
—
—
—
—
0.45
0.35
0.80
—
—
—
—
—
—
—
—
—
—
nC
mJ
ns
mJ
ns
(VCE = 25 Vdc, VGE = 0 Vdc,
Vdc
Vdc
f = 1.0 MHz)
Cies
Coes
Cres
—
—
—
1020
104
17
—
—
—
pF
VCE(on)
—
—
—
VGE(th)
4.0
—
gfe
—
6.0
10
5.0
8.0
—
—
1.6
1.5
2.0
1.9
—
2.4
Vdc
mV/°C
Mhos
Vdc
V(BR)CES
600
—
V(BR)ECS
ICES
—
—
IGES
—
—
—
—
10
200
50
µAdc
15
—
870
—
—
—
—
Vdc
mV/°C
Vdc
µAdc
Symbol
Min
Typ
Max
Unit
2
Motorola IGBT Device Data
MGW14N60ED
ELECTRICAL CHARACTERISTICS — continued
(TJ = 25°C unless otherwise noted)
Characteristic
DIODE CHARACTERISTICS — continued
Reverse Recovery Time
(
(IF = 10 Adc, VR = 360 Vd ,
Ad ,
Vdc,
dIF/dt = 200 A/µs)
Reverse Recovery Stored Charge
Reverse Recovery Time
(
(IF = 10 Adc, VR = 360 Vd ,
Ad ,
Vdc,
dIF/dt = 200 A/µs, TJ = 125°C)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
30
TJ = 25°C
IC , COLLECTOR CURRENT (AMPS)
17.5 V
20 V
20
15 V
12.5 V
IC , COLLECTOR CURRENT (AMPS)
30
TJ = 125°C
17.5 V
20
20 V
VGE = 10 V
10
15 V
12.5 V
LE
—
7.5
—
nH
trr
ta
tb
QRR
trr
ta
tb
QRR
—
—
—
—
—
—
—
—
75
31
44
0.16
139
45
94
0.40
—
—
—
—
—
—
—
—
µC
µC
ns
ns
Symbol
Min
Typ
Max
Unit
VGE = 10 V
10
0
0
2
4
6
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
0
0
2
4
6
8
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics
30
IC , COLLECTOR CURRENT (AMPS)
VCE = 100 V
5
m
s PULSE WIDTH
20
2.3
VGE = 15 V
80
m
s PULSE WIDTH
2.1
IC = 10 A
1.9
7.5 A
1.7
5.0 A
1.5
–50
–25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
10
TJ = 125°C
25°C
0
5
7
9
11
13
15
17
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
Figure 4. Collector–To–Emitter Saturation
Voltage versus Junction Temperature
Motorola IGBT Device Data
3
MGW14N60ED
TJ = 25°C
VGE = 0 V
C, CAPACITANCE (pF)
1600
Cies
Coes
800
Cres
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
2400
20
16
QT
12
Q1
8
TJ = 25°C
VCC = 300 V
IC = 10 A
Q2
4
0
0
20
40
0
0
5
10
15
20
25
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
60
80
Qg, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter Voltage
versus Total Charge
1.0
E TS , TOTAL ENERGY LOSSES (mJ)
1.75
E TS , TOTAL ENERGY LOSSES (mJ)
TJ = 125°C
VDD = 360 V
VGE = 15 V
1.25
IC = 10 A
0.8
VCC = 360 V
VGE = 15 V
RG = 20
W
IC = 10 A
7.5 A
0.6
5.0 A
0.4
7.5 A
0.75
5.0 A
0.2
0
–50
–25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
0.25
5
20
35
50
65
RG, GATE RESISTANCE (OHMS)
Figure 7. Total Energy Losses versus
Gate Resistance
1.0
Eoff , TURN–OFF ENERGY LOSSES (mJ)
E TS , TOTAL ENERGY LOSSES (mJ)
TJ = 125°C
VCC = 360 V
VGE = 15 V
RG = 20
W
0.8
Figure 8. Total Energy Losses versus
Junction Temperature
0.8
TJ = 125°C
VDD = 360 V
VGE = 15 V
0.6
IC = 10 A
0.6
7.5 A
0.4
5.0 A
0.2
0.4
0.2
0
0
2.5
5
7.5
10
IC, COLLECTOR CURRENT (AMPS)
5
15
25
35
45
RG, GATE RESISTANCE (OHMS)
Figure 9. Total Energy Losses versus
Collector Current
Figure 10. Turn–Off Energy Losses
versus Gate Resistance
4
Motorola IGBT Device Data
MGW14N60ED
0.8
Eoff , TURN–OFF ENERGY LOSSES (mJ)
Eoff , TURN–OFF ENERGY LOSSES (mJ)
VCC = 360 V
VGE = 15 V
RG = 20
W
IC = 10 A
0.4
1.0
TJ = 125°C
VCC = 360 V
VGE = 15 V
RG = 20
W
0.6
0.8
0.6
7.5 A
0.4
0.2
5.0 A
0.2
0
0
–50
–25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
0
5
10
15
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Turn–Off Energy Losses versus
Junction Temperature
Figure 12. Turn–Off Energy Losses versus
Collector Current
100
IF , INSTANTANEOUS FORWARD
CURRENT (AMPS)
IC , COLLECTOR CURRENT (AMPS)
100
TJ = 125°C
10
25°C
10
TJ = 125°C
RGE = 20
W
VGE = 15 V
1
1
0.5
1.0
1.5
2.0
2.5
VFEC, EMITTER–TO–COLLECTOR VOLTAGE (VOLTS)
1
10
100
1000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 13. Forward Characteristics
versus Current
Figure 14. Reverse Biased Safe
Operating Area
Motorola IGBT Device Data
5
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