MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MGW12N120/D
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
•
Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
•
High Speed Eoff: 160
m
J/A typical at 125°C
•
High Short Circuit Capability – 10
m
s minimum
•
Robust High Voltage Termination
C
™
Data Sheet
MGW12N120
Motorola Preferred Device
IGBT IN TO–247
12 A @ 90°C
20 A @ 25°C
1200 VOLTS
SHORT CIRCUIT RATED
G
G
E
C
E
CASE 340F–03, Style 4
TO–247AE
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
Collector Current
— Continuous @ TC = 90°C
Collector Current
— Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20
Ω)
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Symbol
VCES
VCGR
VGE
IC25
IC90
ICM
PD
TJ, Tstg
tsc
R
θJC
R
θJA
TL
Value
1200
1200
±
20
20
12
40
123
0.98
– 55 to 150
10
1.0
45
260
10 lbf
S
in (1.13 N
S
m)
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
m
s
°C/W
°C
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
©
Motorola TMOS
Motorola, Inc. 1996
Power MOSFET Transistor Device Data
1
MGW12N120
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector–to–Emitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25
µAdc)
Temperature Coefficient (Positive)
Emitter–to–Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
Zero Gate Voltage Collector Current
(VCE = 1200 Vdc, VGE = 0 Vdc)
(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGE =
±
20 Vdc, VCE = 0 Vdc)
ON CHARACTERISTICS (1)
Collector–to–Emitter On–State Voltage
(VGE = 15 Vdc, IC = 5.0 Adc)
(VGE = 15 Vdc, IC = 5.0 Adc, TJ = 125°C)
(VGE = 15 Vdc, IC = 10 Adc)
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
Forward Transconductance (VCE = 10 Vdc, IC = 10 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS (1)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Turn–Off Switching Loss
Gate Charge
(VCC = 720 Vdc, IC = 10 Adc,
VGE = 15 Vdc)
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25″ from package to emitter bond pad)
(1) Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
LE
—
13
—
nH
(VCC = 720 Vdc, IC = 10 Adc,
VGE = 15 Vdc, L = 300
m
H
RG = 20
Ω,
TJ = 125°C)
Energy losses include “tail”
(VCC = 720 Vdc, IC = 10 Adc,
VGE = 15 Vdc, L = 300
m
H
RG = 20
Ω,
TJ = 25°C)
Energy losses include “tail”
td(on)
tr
td(off)
tf
Eoff
td(on)
tr
td(off)
tf
Eoff
QT
Q1
Q2
—
—
—
—
—
—
—
—
—
—
—
—
—
74
83
76
231
0.55
66
87
120
575
1.49
31
13
14
—
—
—
—
1.33
—
—
—
—
—
—
—
—
mJ
nC
mJ
ns
ns
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Cies
Coes
Cres
—
—
—
930
126
16
—
—
—
pF
VCE(on)
—
—
—
VGE(th)
4.0
—
gfe
—
6.0
10
12
8.0
—
—
2.51
2.36
3.21
3.37
—
4.42
Vdc
mV/°C
Mhos
Vdc
BVCES
1200
—
BVECS
ICES
—
—
IGES
—
—
—
—
100
2500
250
nAdc
25
—
870
—
—
—
—
Vdc
mV/°C
Vdc
µAdc
Symbol
Min
Typ
Max
Unit
2
Motorola TMOS Power MOSFET Transistor Device Data
MGW12N120
TYPICAL ELECTRICAL CHARACTERISTICS
40
TJ = 25°C
IC, COLLECTOR CURRENT (AMPS)
30
17.5 V
20
40
TJ = 125°C
IC, COLLECTOR CURRENT (AMPS)
30
17.5 V
20
15 V
12.5 V
10
10 V
8
0
0
1
2
3
4
5
6
7
8
VGE = 20 V
VGE = 20 V
15 V
12.5 V
10
7.5 V
0
0
1
2
3
4
5
6
7
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics, TJ = 25°C
24
IC, COLLECTOR CURRENT (AMPS)
20
16
12
8
4
0
TJ = 125°C
25°C
VCE = 10 V
250
µs
PULSE WIDTH
VCE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
3.8
3.6
3.4
3.2
Figure 2. Output Characteristics, TJ = 125°C
IC = 10 A
7.5 A
3.0
2.8
2.6
2.4
2.2
2
– 50
VGE = 15 V
250
µs
PULSE WIDTH
0
50
100
150
5A
5
7
9
11
13
15
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
16
QT
12
Q1
8
Q2
1600
VCE = 0 V
C, CAPACITANCE (pF)
1200
Cies
800
400
Cres
0
0
5
4
TJ = 25°C
IC = 10 A
VGE = 15 V
30
35
Coes
10
15
20
25
0
0
5
10
15
20
25
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Qg, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
Motorola TMOS Power MOSFET Transistor Device Data
3
MGW12N120
TOTAL SWITCHING ENERGY LOSSES (mJ)
VCC = 720 V
VGE = 15 V
TJ = 125°C
TOTAL SWITCHING ENERGY LOSSES (mJ)
3
IC = 10 A
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
VCC = 720 V
VGE = 15 V
RG = 20
Ω
2.5
IC = 10 A
2
7.5 A
7.5 A
5A
1.5
5A
1
10
20
30
40
50
25
50
75
100
125
150
RG, GATE RESISTANCE (OHMS)
TC, CASE TEMPERATURE (°C)
Figure 7. Total Switching Losses versus
Gate Resistance
I , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
Figure 8. Total Switching Losses versus
Case Temperature
TOTAL SWITCHING ENERGY LOSSES (mJ)
2.4
2.2
2
1.8
1.6
1.4
1.2
1
5
6
7
8
9
10
VCC = 720 V
VGE = 15 V
RG = 20
Ω
TJ = 125°C
25
20
TJ = 125°C
15
10
TJ = 25°C
5
0
0
1
2
3
4
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
VFM, FORWARD VOLTAGE DROP (VOLTS)
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
100
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
IC, COLLECTOR–TO–EMITTER CURRENT (A)
10
1
VGE = 15 V
RGE = 20
Ω
TJ
≤
125°C
0.1
1
10
100
1000
10000
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Figure 11. Reverse Biased
Safe Operating Area
4
Motorola TMOS Power MOSFET Transistor Device Data
MGW12N120
1.0
D = 0.5
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
t2
DUTY CYCLE, D = t1/t2
0.01
1.0E–05
1.0E–04
1.0E–03
1.0E–02
t, TIME (s)
1.0E–01
t1
P(pk)
R
θJC
(t) = r(t) R
θJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC
(t)
1.0E+00
1.0E+01
Figure 12. Thermal Response
Motorola TMOS Power MOSFET Transistor Device Data
5
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