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MG360V1US41

Description
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
CategoryDiscrete semiconductor    The transistor   
File Size316KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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MG360V1US41 Overview

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

MG360V1US41 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instructionFLANGE MOUNT, R-XUFM-X5
Contacts5
Reach Compliance Codeunknow
Other featuresHIGH SPEED
Shell connectionISOLATED
Maximum collector current (IC)360 A
Collector-emitter maximum voltage1700 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)1500 ns
Gate emitter threshold voltage maximum8 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X5
Number of components1
Number of terminals5
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment3600 W
Maximum power dissipation(Abs)3600 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)1000 ns
Nominal on time (ton)500 ns
VCEsat-Max4.5 V

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