MITSUBISHI MEMORY CARD
STATIC RAM CARDS
8/16-bit Data Bus
Static RAM Card
Connector Type
Two- piece 68-pin
MF365A-LCDATXX
MF365A-LSDATXX
MF3129-LCDATXX
MF3129-LSDATXX
MF3257-LCDATXX
MF3257-LSDATXX
MF3513-LCDATXX
MF3513-LSDATXX
MF31M1-LCDATXX
MF31M1-LSDATXX
MF32M1-LCDATXX
MF32M1-LSDATXX
MF34M1-LCDATXX
MF34M1-LSDATXX
Electrostatic discharge protectiton to 15kV
Buffered interface
68-pin connector
8-bit and 16-bit data width
Write protect switch
Battery voltage pin
LS Type Wide Range operating temperature
Ta= -20 to 70°C
DESCRIPTION
Mitsubishi’s Static RAM cards provide large
memory capacities on a device approximately the
size of a credit card(85.6mm×54mm×3.3mm).
T h e c a r d s u s e a
8 / 1 6
bit data bus.The devices
use a replaceable lithium battery to maintain data.
Available in 64K byte-4M byte capacities,
Mitsubishi’s Static RAM cards are available with
a 68-pin, two-piece connector.
FEATURES
Uses TSOP (Thin Small Outline Package) to
achieve very high memory density coupled
with high reliability, without enlarging card
size
PRODUCT LIST
Item
Type name
MF365A-LCDATXX
MF3129-LCDATXX
MF3257-LCDATXX
MF3513-LCDATXX
MF31M1-LCDATXX
MF32M1-LCDATXX
MF34M1-LCDATXX
MF365A-LSDATXX
MF3129-LSDATXX
MF3257-LSDATXX
MF3513-LSDATXX
MF31M1-LSDATXX
MF32M1-LSDATXX
MF34M1-LSDATXX
Memory
capacity
64KB
128KB
256KB
512KB
1MB
2MB
4MB
64KB
128KB
256KB
512KB
1MB
2MB
4MB
8/16
NO
Data Bus
width(bits)
Attribute
memory
APPLICATION
S
Office automation
Computers
Telecommunications
Data Communications
Industrial
Consumer
Auxialiary
battery
Memory
organization
256K bit SRAM
×
2
256K bit SRAM
×
4
1M bit SRAM
×
2
1M bit SRAM
×
4
1M bit SRAM
×
8
1 M b i t S R A M
×
16
Outline
drawing
Main battery
holder
NO
4M bit SRAM
×
8
256K bit SRAM
×
2
256K bit SRAM
×
4
1M bit SRAM
×
2
1M bit SRAM
×
4
1M bit SRAM
×
8
1 M b i t S R A M
×
16
4M bit SRAM
×
8
68P-003
Screw type
MITSUBISHI
ELECTRIC
1/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
PIN ASSIGNMENT
T w o - P i e c e T y p e
(68-pin)
Pin
Symbol
No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
GND
D3
D4
D5
D6
D7
CE1#
A10
OE#
A11
A9
A8
A13
A14
WE#
NC
V
CC
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
D0
D1
D2
WP
GND
Ground
Pin
No.
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
GND
CD1
#
D11
D12
D13
D14
D15
CE2#
NC
NC
NC
A17
A18
A19
A20
A21
V
CC
NC
NC
NC
NC
NC
NC
NC
NC
NC
REG
#
BVD2
BVD1
D8
D9
D10
CD2
#
GND
Ground
Card detect 1
Function
Symbol
Function
Data I/O
Data I/O
Card enable 1
Address input
Output enable
Card enable 2
No connection
A17(NC for
≤
128KB types)
A18(NC for
≤
256KB types)
A19(NC for
≤
512KB types)
A20(NC for
≤
1MB types)
A21(NC for
≤
2MB types)
Power supply voltage
No connection
No connection
Address input
Address input
Write enable
No connection
Power supply voltage
No connection
A16(NC for 64KB type)
No connection
Address input
REG function
Battery voltage detect 2
Battery voltage detect 1
Data I/O
Card detect 2
Ground
Data I/O
Write protect
Ground
WRITE PROTECT MODE
(WP)
When the write protect switch is switched on, this
card goes into a write protect mode that can read
but not write data.
In this mode, the WP pin becomes “H” level.
At the shipment the write protect switch is switched
off (Normal mode : The card can be written ; WP pin
indicates “L” level).
MITSUBISHI
ELECTRIC
2/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
BLOCK DIAGRAM
(4MB)
A21
A20
A0
A19
A18
A17
A16
A15
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
ADDRESS-
DECODER
8
CS#
COMMON
MEMORY
4Mbit SRAM×8
ADDRESS-
BUS
BUFFERS
19
16
DATA-BUS
BUFFERS
OE#
WE#
D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
CE1#
CE2#
WE#
OE#
REG#
WP#
WRITE PROTECT
OFF
ON
MODE
CONTROL
LOGIC
TO INTERNAL
POWER
VOLTAGE DETECTOR
&
POWER CONTROLLER
GND
BR2325
V
CC
BVD2
BVD1
CD1#
CD2#
FUNCTION TABLE
Mode
Standby
Read A (16bit) common
Write A (16bit) common
Read B (8bit) common
Write B (8bit) common
Read C (8bit) common
Write C (8bit) common
Output disable
Read A (16bit) attribute
Read B (8bit) attribute
Read C (8bit) attribute
REG#
CE1#
CE2#
OE#
WE#
A0
X
H
H
H
H
H
H
H
H
X
L
L
L
L
H
L
L
L
L
L
L
H
H
X
L
L
L
H
H
L
L
H
H
H
H
L
L
X
L
H
H
L
X
L
H
L
L
H
H
L
H
H
L
L
L
L
X
H
L
H
H
L
L
H
L
H
H
H
H
H
X
X
X
L
H
L
H
X
X
X
X
L
H
X
I/O (D15~D8)
High-impedance
Odd Byte Data out
Odd Byte Data in
High-impedance
High-impedance
High-impedance
High-impedance
Odd Byte Data out
Odd Byte Data in
High-impedance
Data out (unknown)
High-impedance
High-impedance
Data out (unknown)
I/O (D7~D0)
High-impedance
Even Byte Data out
Even Byte Data in
Even Byte Data out
Odd Byte Data out
Even Byte Data in
Odd Byte Data in
High-impedance
High-impedance
High-impedance
Data out (FFh)
Data out (FFh)
Data out (unknown)
High-impedance
I
CC
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Note 1 : H=V
I H
, L=V
I L ,
X=V
I H
or V
I L
MITSUBISHI
ELECTRIC
3/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
C C
Vi
V
o
T
opr1
T
opr2
T
stg
Parameter
Supply voltage
Input voltage
Output voltage
Operating temperature 1
Operating temperature 2
Storage temperature
Conditions
With respect to GND
Read, Write, Operation
Data retention
Ratings
-0.3~6.0
-0.3~V
C C
+0.3
0~V
C C
LC series 0~70
LS series -20~70
LC series 0~70
LS series -20~70
-30~80
Unit
V
V
V
°C
°C
°C
°C
°C
R E C O M M E N D E D O P E R A T I N G C O N D I T I O N S
(LC series Ta= 0~55°C, unless otherwise noted)
(LS series Ta=-20~70°C, unless otherwise noted)
Limits
Parameter
Symbol
Unit
Min.
Typ.
Max.
V
C C
V
C C
Supply voltage
4.50
5.0
5.25
V
GND
System ground
0
V
V
I H
High input voltage
3.5
V
C C
V
V
I L
Low input voltage
0
0.8
V
MITSUBISHI
ELECTRIC
4/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
E L E C T R I C A L C H A R A C T E R I S T I C S
( L C s e r i e s T a = 0 ~ 5 5 ° C , V
CC
= 4 . 5 0 ~ 5 . 2 5 V , u n l e s s o t h e r w i s e n o t e d )
Symbol
V
OH
V
OL
I
IH
I
IL
I
OZH
I
OZL
Parameter
High output voltage
Low output voltage
High input current
Low input current
High output current
in off state
Low output current
in off state
I
CC
1 • 1
Active supply
current 1
I
CC
1 • 2
Active supply
current 2
I
CC
2 • 1
Standby supply current 1
I
CC
2 • 2
VBDET1
VBDET2
Standby supply current 2
Battery detect
reference voltage 1
¬
Battery detect
reference voltage 2
¬
( L S s e r i e s T a = - 2 0 ~ 7 0 ° C , V
CC
= 4 . 5 0 ~ 5 . 2 5 V , u n l e s s o t h e r w i s e n o t e d )
Limits
Test conditions
Unit
M i n . Typ. Max.
I
OH
= - 1 . 0 m A
2.4
V
I
OL
= 1 m A
0.4
V
V
I
=V
CC
V
10
µA
V
I
=0V
CE1#, CE2#, WE#, OE#, REG#
-10
-70
µA
Other inputs
-10
C E 1 # = C E 2 # = V
IH
o r O E # = V
IH
W E # = V
IH
,
10
µA
V
O
=V
CC
C E 1 # = C E 2 # = V
IH
o r O E # = V
IH
W E # = V
IH
,
-10
µA
V
O
= 0 V
64KB~1MB
16bit
150
C E 1 # = C E 2 # = V
IL
8bit
110
O t h e r i n p u t s V
IH
o r V
IL
2MB
16bit
160
mA
Outputs=open
8bit
120
Cycle time=250ns
4MB
16bit
200
8bit
160
64KB~1MB
16bit
140
CE1#=CE2#
≤
0.2V
8bit
100
Other inputs
≤
0.2V or
2MB
16bit
150
mA
≥
V
CC
-0.2V
8bit
110
Outputs=open
4MB
16bit
190
Cycle time=250ns
8bit
150
C E 1 # = C E 2 # = V
IH
10
mA
O t h e r i n p u t s = V
IH
o r V
IL
C E 1 # = C E 2 #
≥
V
CC
- 0 . 2 V
64KB,128KB
0.15
0.30
Other inputs
≤
0.2V or
256KB~1MB
0.15
0.45
mA
≥
V
CC
- 0 . 2 V
2MB,4MB
0.30
0.65
Vcc=5V,Ta=25
°C
V
2.37 2.47
2.27
Vcc=5V,Ta=25
°C
2.55
2.65
2.75
V
Note 2 : Currents flowing into the IC are taken as positive (unsigned).
3 : Typical values are measured at V
C C
= 5 V , T a = 2 5 ° C .
¬
Pin asserted when battery voltage drops below specified level.
MITSUBISHI
ELECTRIC
5/11
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