MDS35 / 50 / 80 Series
DIODE / SCR MODULE
MAIN FEATURES:
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
50-70-85
800 and 1200
50 and 100
Unit
A
V
mA
DESCRIPTION
Packaged in ISOTOP modules, the MDS Series is
based on the half-bridge SCR-diode configuration.
They are suitable for high power applications,
using phase controlled bridges, such as soft-start
circuits, welding equipment, motor speed
controller. The compactness of the ISOTOP
package allows high power density and optimized
power bus connections. Thanks to their internal
ceramic pad, they provide high voltage insulation
(2500V RMS), complying with UL standards (File
ref: E81734).
PIN CONNECTIONS
ISOTOP®
ABSOLUTE RATINGS
(limiting values)
Value
Symbol
I
T(RMS)
I
T(AV)
I
TSM
I
FSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
V
RGM
RMS on-state current
Average on-state current
(Single phase-circuit, 180° conduction angle per device)
tp = 8.3 ms
Non repetitive surge peak on-state
current (Tj initial = 25°C)
tp = 10 ms
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, tr
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Maximum peak reverse SCR gate voltage
tp = 10 ms
F = 60 Hz
tp = 20 µs
Tc = 85°C
Tj = 25°C
Tj = 25°C
Tj = 125°C
Tj = 125°C
Tj = 125°C
Parameter
35
50
25
420
400
50
70
35
630
600
80
85
55
730
700
A
2
S
A/µs
A
W
°C
V
1/7
A
A
A
Unit
800 1800 2450
50
4
1
- 40 to + 150
- 40 to + 125
5
ISOTOP is a registred trademark of STMicroelectronics
December 2000 - Ed: 4
MDS35 / 50 / 80 Series
ELECTRICAL CHARACTERISTICS
(Tj = 25°C, unless otherwise specified)
SCR
MDS
Symbol
I
GT
V
D
= 12 V
V
GT
V
GD
I
H
I
L
dV/dt
V
D
= V
DRM
I
T
= 500 mA
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
I
TM
= 80 A
V
TM
I
TM
= 110 A
I
TM
= 170 A
V
t0
R
d
I
DRM
I
RRM
Gate open
Tj = 125°C
R
L
= 3.3 kΩ
Gate open
Tj = 125°C
R
L
= 30
Ω
Test Conditions
35
MIN.
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
1.7
Tj = 25°C
MAX.
-
-
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
11
5
50
1.3
0.2
80
120
1000
-
1.75
-
0.85
7.0
20
10
5.5
-
-
1.75
V
mΩ
µA
mA
V
50
80
10
100
V
V
mA
mA
V/µs
mA
Unit
tp = 380 µs
tp = 380 µs
tp = 380 µs
Threshold voltage
Dynamic resistance
V
DRM
/ V
RRM
RATED
DIODE
MDS
Symbol
V
F
I
F
= 80 A
I
F
= 110 A
I
F
= 170 A
V
t0
R
d
I
R
Threshold voltage
Dynamic resistance
V
R
= V
RRM
Tj = 125°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
MAX.
MAX.
MAX.
11
Tj = 25°C
MAX.
Test Conditions
35
1.7
-
-
50
-
1.7
-
0.85
7.0
20
10
5.5
80
-
-
1.7
V
mΩ
µA
mA
V
Unit
2/7
MDS35 / 50 / 80 Series
THERMAL RESISTANCES
Symbol
R
th(j-c)
Junction to case (DC)
Parameter
MDS35
MDS50
MDS80
Value
1.00
0.75
0.45
Unit
°C/W
PRODUCT SELECTOR
Voltage (xxx)
Part Number
800 V
MDS35-xxx
MDS50-xxx
MDS80-xxx
X
X
X
1200 V
X
X
X
50 mA
50 mA
150 mA
ISOTOP
TM
Sensitivity
Package
ORDERING INFORMATION
SCR
MODULE
SERIES
CURRENT:
35: 50A
50: 70A
80: 85A
VOLTAGE:
800: 800V
1200: 1200V
OTHER INFORMATION
Part Number
MDS35-xxx
MSDS50-xxx
MDS80-xxx
Note:
xxx = voltage
Marking
MDS35-xxx
MDS50-xxx
MDS80-xxx
Weight
27.0 g
27.0 g
27.0 g
Base Quantity
10
10
10
Packing mode
Tube
Tube
Tube
3/7
MDS35 / 50 / 80 Series
Fig. 1-1:
Maximum average power dissipation
versus average on-state current (thyristor or
diode, sinusoïdal waveform).
Fig. 1-2:
Maximum average power dissipation
versus average on-state current (thyristor or
diode, rectangular waveform).
Fig. 1-3:
Maximum total power dissipation versus
output current on resistive or inductive load
(Single phase bridge rectifier, two packages).
Fig. 1-4:
Maximum total power dissipation versus
output current (Three phase bridge rectifier, three
packages).
Fig. 2-1:
Average on-state current versus case
temperature (thyristor or diode, sinusoïdal
waveform).
Fig. 2-2:
Average on-state current versus case
temperature (thyristor or diode, rectangular
waveform).
4/7
MDS35 / 50 / 80 Series
Fig. 3:
Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 4:
Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 5-1:
Surge peak on-state current versus
number of cycles (MDS35 and MDS50).
Fig. 5-2:
Surge peak on-state current versus
number of cycles (MDS80).
Fig. 6-1:
Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t
(MDS35 and MDS50).
Fig. 6-2:
Non repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10 ms, and corresponding value of I²t
(MDS80).
5/7
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