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1N914A-BP

Description
Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35, ROHS COMPLIANT PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size221KB,4 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric Compare View All

1N914A-BP Overview

Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35, ROHS COMPLIANT PACKAGE-2

1N914A-BP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDO-35
package instructionROHS COMPLIANT PACKAGE-2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW LEAKAGE CURRENT
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-XALF-W2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.004 µs
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
1N914(A)(B)

)HDWXUHV
Moisture Sensitivity Level 1
Low Current Leakage
Compression Bond Construction
Low Cost
Marking : Cathode band and type number
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Operating Temperature: -55 C to +150 C
Storage Temperature: -55
O
C to +150
O
C
Maximum Thermal Resistance; 300
O
C/W Junction To Ambient
O
O
500mW 100 Volt
Silicon Epitaxial
Diodes
DO-35
0D[LPXP5DWLQJV
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Maximum Repetitive
Reverse Voltage
Average Rectified
Forward Current
Power Dissipation
Junction Temperature
Peak Forward Surge
Current
V
RRM
I
O
P
D
T
J
I
FSM
100V
200mA
500mW
150
O
C
1.0A
4.0A
100V
75V
A
D
Minimum Breakdown
Voltage
Maximum
Instantaneous
Forward Voltage
1N914
1N914 A
1N914 B
1N914 B
Maximum Reverse
Current
Typical Junction
Capacitance
Reverse Recovery
Time
V
R
Pulse Width=1.0
second
Pulse Width=1.0
microsecond
I
R
=100uA,
I
R
=5.0uA
O
Cathode
Mark
B
D
C
V
F
1.0V
I
R
C
J
T
rr
720mV
25nA
5.0uA
50uA
4.0pF
4.0nS
T
J
= 25 C
I
FM
= 10mA;
I
FM
= 20mA;
I
FM
= 100mA;
I
FM
= 5.0mA;
O
V
R
=20V, T
J
=25 C,
O
V
R
=75V, T
J
=25 C,
O
V
R
=20V, T
J
=150 C
Measured at 1.0MHz,
V
R
=0V
I
F
=10mA
V
R
= 6V
R
L
=100 Ù, I
rr
=1.0mA
DIMENSIONS
INCHES
MIN
---
---
---
1.000
MM
MIN
---
---
---
25.40
DIM
A
B
C
D
MAX
.166
.079
.020
---
MAX
4.2
2.00
.52
---
NOTE
*Pulse test: Pulse width 300 usec, Duty cycle 2%
Note:
1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I.
Revision:
B
www.mccsemi.com
1 of 4
2012/01/01

1N914A-BP Related Products

1N914A-BP 1N914A-TP 1N914B-BP 1N914-BP JWL22RB1A-H 1N914A-AP 11020FL210034-02
Description Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35, ROHS COMPLIANT PACKAGE-2 Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35, ROHS COMPLIANT PACKAGE-2 Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35, ROHS COMPLIANT PACKAGE-2 Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35, ROHS COMPLIANT PACKAGE-2 General Specifications Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35, ROHS COMPLIANT PACKAGE-2 Board Connector, 34 Contact(s), 2 Row(s), Female, Straight, 0.039 inch Pitch, Surface Mount Terminal, Locking, Black Insulator
Is it lead-free? Lead free Lead free Lead free Lead free - Lead free -
Is it Rohs certified? conform to conform to conform to conform to - conform to -
Parts packaging code DO-35 DO-35 DO-35 DO-35 - DO-35 -
package instruction ROHS COMPLIANT PACKAGE-2 O-XALF-W2 ROHS COMPLIANT PACKAGE-2 ROHS COMPLIANT PACKAGE-2 - ROHS COMPLIANT PACKAGE-2 -
Contacts 2 2 2 2 - 2 -
Reach Compliance Code unknow compli unknow compli - unknow compliant
ECCN code EAR99 EAR99 EAR99 EAR99 - EAR99 EAR99
Other features LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT - LOW LEAKAGE CURRENT -
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED - ISOLATED -
Configuration SINGLE SINGLE SINGLE SINGLE - SINGLE -
Diode component materials SILICON SILICON SILICON SILICON - SILICON -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE - RECTIFIER DIODE -
JEDEC-95 code DO-35 DO-35 DO-35 DO-35 - DO-35 -
JESD-30 code O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2 - O-XALF-W2 -
JESD-609 code e3 e3 e3 e3 - e3 -
Humidity sensitivity level 1 1 1 1 - 1 -
Number of components 1 1 1 1 - 1 -
Number of terminals 2 2 2 2 - 2 -
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C - 150 °C 105 °C
Maximum output current 0.2 A 0.2 A 0.2 A 0.2 A - 0.2 A -
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED - UNSPECIFIED -
Package shape ROUND ROUND ROUND ROUND - ROUND -
Package form LONG FORM LONG FORM LONG FORM LONG FORM - LONG FORM -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED -
Maximum power dissipation 0.5 W 0.5 W 0.5 W 0.5 W - 0.5 W -
Certification status Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified -
Maximum repetitive peak reverse voltage 100 V 100 V 100 V 100 V - 100 V -
Maximum reverse recovery time 0.004 µs 0.004 µs 0.004 µs 0.004 µs - 0.004 µs -
surface mount NO NO NO NO - NO -
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) - Matte Tin (Sn) -
Terminal form WIRE WIRE WIRE WIRE - WIRE -
Terminal location AXIAL AXIAL AXIAL AXIAL - AXIAL -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED -
Base Number Matches 1 1 1 1 - 1 -

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