Rev 3: Nov 2004
AO4405, AO4405L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4405 uses advanced trench technology to
provide excellent R
DS(ON)
with low gate charge. This
device is suitable for use as a load switch or in PWM
applications. AO4405L( Green Product ) is offered in
a lead-free package.
Features
V
DS
(V) = -30V
I
D
= -6.0A
R
DS(ON)
< 50mΩ (V
GS
= -10V)
R
DS(ON)
< 85mΩ (V
GS
= -4.5V)
SOIC-8
Top View
S
S
S
G
D
D
D
D
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-30
±20
-6.0
-5.1
-30
3
2.1
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4405, AO4405L
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-24V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=6A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-4A
Forward Transconductance
V
DS
=-5V, I
D
=-6A
6
I
S
=-1A,V
GS
=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
T
J
=125°C
-1
-30
40
55
65
9.5
-0.78
-1
-4.2
700
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
112
78
10
14.7
V
GS
=-10V, V
DS
=-15V, I
D
=-6A
7.6
2
3.8
8.6
V
GS
=-10V, V
DS
=-15V, R
L
=2.5Ω,
R
GEN
=3Ω
I
F
=-6A, dI/dt=100A/µs
I
F
=-6A, dI/dt=100A/µs
5
28.2
13.5
24
14.7
30
15
18
840
50
70
85
-1.8
Min
-30
-1
-5
±100
-3
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge (10V)
Q
g
(4.5V) Total Gate Charge (4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4405, AO4405L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
-10V
10
-6V -5V
-4.5V
8
-4V
6
10
-3.5V
-I
D
(A)
4
2
0
5.00
0
1
2
3
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics
1.6
Normalized On-Resistance
V
DS
=-5V
15
-I
D
(A)
125°C
5
V
GS
=-3V
-2.5V
1.00
2.00
3.00
4.00
25°C
0
0.00
-V
DS
(Volts)
Figure 1: On-Region Characteristics
100
80
R
DS(ON)
(m
Ω
)
V
GS
=-4.5V
1.4
V
GS
=-10V
V
GS
=-4.5V
60
V
GS
=-10V
1.2
40
1
I
D
=-5A
20
0
2
4
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
160
140
120
R
DS(ON)
(m
Ω
)
-I
S
(A)
100
I
D
=-5A
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1E+01
1E+00
1E-01
1E-02
125°C
125°C
1E-03
80
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
25°C
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-04
60
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
25°C
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
40
20
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E-05
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4405, AO4405L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
9
8
7
-V
GS
(Volts)
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
1200
V
DS
=-15V
I
D
=-6A
Capacitance (pF)
1000
800
600
400
C
oss
200
0
0
C
rss
5
10
15
20
25
30
C
iss
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
100
T
J(Max)
=150°C
T
A
=25°C
R
DS(ON)
limited
0.1s
40
10µs
100µs
1ms
10ms
Power (W)
30
T
J(Max)
=150°C
T
A
=25°C
-I
D
(Amps)
10
20
1
1s
10s
DC
10
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
D
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
0.1
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
T
on
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
Embedded System
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