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AP2306N

Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size72KB,4 Pages
ManufacturerETC
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AP2306N Overview

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2306N
Advanced Power
Electronics Corp.
Capable of 2.5V gate drive
Lower on-resistance
Surface mount package
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
20V
32mΩ
5.3A
Description
SOT-23
G
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.
D
G
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current , V
GS
@ 4.5V
Continuous Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
20
±
12
5.3
4.3
10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
3
Max.
Value
90
Unit
℃/W
Data and specifications subject to change without notice
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