Features
•
4.5V to 5.5V Read/Write
•
Access Time - 70 ns
•
Sector Erase Architecture
– Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout
– Two 16K Word (32K Byte) Sectors with Individual Write Lockout
– Two 8K Word (16K Byte) Sectors with Individual Write Lockout
– Four 4K Word (8K Byte) Sectors with Individual Write Lockout
Fast Word Program Time - 10 µs
Fast Sector Erase Time - 200 ms
Dual Plane Organization, Permitting Concurrent Read while Program/Erase
– Memory Plane A: Four 4K Word, Two 8K Word and Two 16K Word Sectors
– Memory Plane B: Fourteen 32K Word Sectors
Erase Suspend Capability
– Supports Reading/Programming Data from Any Sector by Suspending Erase of
Any Different Sector
Low-power Operation
– 40 mA Active
– 10 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
RESET Input for Device Initialization
Sector Program Unlock Command
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
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8-megabit
(512K x 16/
1M x 8)
5-volt Only
Flash Memory
AT49F8011
AT49F8011T
Not Recommended
for New Designs
Description
The AT49F8011(T) is a 5.0 volt 8-megabit Flash memory organized as 524,288 words
of 16 bits each or 1,048,576 bytes of 8 bits each. The x16 data appears on I/O0 -
I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 22 sectors for
erase operations. The device is offered in 48-pin TSOP and 48-ball CBGA packages.
The device has CE, and OE control signals to avoid any bus contention. This device
can be read or reprogrammed using a single 5.0V power supply, making it ideally
suited for in-system programming.
Pin Configurations
Pin Name
A0 - A18
CE
OE
WE
RESET
RDY/BUSY
I/O0 - I/O14
I/O15 (A-1)
BYTE
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
READY/BUSY Output
Data Inputs/Outputs
I/O15 (Data Input/Output, Word Mode)
A-1 (LSB Address Input, Byte Mode)
Selects Byte or Word Mode
No Connect
Don’t Connect
1264D–FLASH–5/03
1
TSOP Top View
Type 1
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
NC
NC
RDY/BUSY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
GND
I/O15/A-1
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
CBGA Top View
1
A
A3
A7 RDY/BUSY WE
A17
A6
A5
I/O0
I/O8
I/O9
I/O1
NC
A18
NC
I/O2
I/O10
I/O11
I/O3
RESET
NC
NC
I/O5
I/O12
VCC
I/O4
A9
A8
A10
A11
I/O7
I/O14
I/O13
I/O6
A13
A12
A14
A15
A16
BYTE
I/O15
/A-1
VSS
2
3
4
5
6
B
A4
C
A2
D
A1
E
A0
F
CE
G
OE
H
VSS
The device powers on in the read mode. Command sequences are used to place the device in
other operation modes such as program and erase. The device has the capability to protect
the data in any sector. Once the data protection for a given sector is enabled, the data in that
sector cannot be changed using input levels between ground and V
CC
.
The device is segmented into two memory planes. Reads from memory plane B may be per-
formed even while program or erase functions are being executed in memory plane A and vice
versa. This operation allows improved system performance by not requiring the system to wait
for a program or erase operation to complete before a read is performed. To further increase
the flexibility of the device, it contains an Erase Suspend feature. This feature will put the
Erase on hold for any amount of time and let the user read data from or program data to any of
the remaining sectors within the same memory plane. There is no reason to suspend the
erase operation if the data to be read is in the other memory plane. The end of a program or
an Erase cycle is detected by the Ready/Busy pin, Data polling, or by the toggle bit.
A six byte command (bypass unlock) sequence to remove the requirement of entering the
three byte program sequence is offered to further improve programming time. After entering
the six byte code, only single pulses on the write control lines are required for writing into the
device. This mode (single pulse byte/word program) is exited by powering down the device, or
by pulsing the RESET pin low for a minimum of 50ns and then bringing it back to V
CC
. Erase
and Erase Suspend/Resume commands will not work while in this mode; if entered they will
result in data being programmed into the device. It is not recommended that the six byte code
reside in the software of the final product but only exist in external programming code.
The BYTE pin controls whether the device data I/O pins operate in the byte or word configura-
tion. If the BYTE pin is set at logic “1”, the device is in word configuration, I/O0-I/O15 are
active and controlled by CE and OE.
If the BYTE pin is set at logic “0”, the device is in byte configuration, and only data I/O pins
I/O0-I/O7 are active and controlled by CE and OE. The data I/O pins I/O8-I/O14 are tri-stated,
and the I/O15 pin is used as an input for the LSB (A-1) address function.
2
AT49F8011(T)
1264D–FLASH–5/03
AT49F8011(T)
Block Diagram
I/O0 - I/O15/A-1
OUTPUT
BUFFER
INPUT
BUFFER
OUTPUT
MULTIPLEXER
A0 - A18
INPUT
BUFFER
DATA
REGISTER
IDENTIFIER
REGISTER
STATUS
REGISTER
COMMAND
REGISTER
ADDRESS
LATCH
DATA
COMPARATOR
CE
WE
OE
RESET
BYTE
RDY/BUSY
WRITE STATE
MACHINE
Y-DECODER
Y-GATING
PROGRAM/ERASE
VOLTAGE SWITCH
VCC
GND
X-DECODER
PLANE B
SECTORS
PLANE A SECTORS
Device
Operation
READ:
The AT49F8011(T) is accessed like an EPROM. When CE and OE are low and WE is
high, the data stored at the memory location determined by the address pins are asserted on
the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This
dual-line control gives designers flexibility in preventing bus contention.
COMMAND SEQUENCES:
When the device is first powered on it will be reset to the read or
standby mode depending upon the state of the control line inputs. In order to perform other
device functions, a series of command sequences are entered into the device. The command
sequences are shown in the Command Definitions table (I/O8 - I/O15 are don't care inputs for
the command codes). The command sequences are written by applying a low pulse on the
WE or CE input with CE or WE low (respectively) and OE high. The address is latched on the
falling edge of CE or WE, whichever occurs last. The data is latched by the first rising edge of
CE or WE. Standard microprocessor write timings are used. The address locations used in the
command sequences are not affected by entering the command sequences.
RESET:
A RESET input pin is provided to ease some system applications. When RESET is at
a logic high level, the device is in its standard operating mode. A low level on the RESET input
halts the present device operation and puts the outputs of the device in a high impedance
state. When a high level is reasserted on the RESET pin, the device returns to the Read or
Standby mode, depending upon the state of the control inputs. By applying a 12V ± 0.5V input
signal to the RESET pin any sector can be reprogrammed even if the sector lockout feature
has been enabled (see Sector Programming Lockout Override section).
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1264D–FLASH–5/03
ERASURE:
Before a byte/word can be reprogrammed, it must be erased. The erased state of
memory bits is a logical “1”. The entire device can be erased by using the Chip Erase com-
mand or individual sectors can be erased by using the Sector Erase commands.
CHIP ERASE:
The entire device can be erased at one time by using the 6-byte chip erase
software code. After the chip erase has been initiated, the device will internally time the erase
operation so that no external clocks are required. The maximum time to erase the chip is t
EC
.
If the sector lockout has been enabled, the Chip Erase will not erase the data in the sector that
has been locked; it will erase only the unprotected sectors. After the chip erase, the device will
return to the read or standby mode.
SECTOR ERASE:
As an alternative to a full chip erase, the device is organized into 22 sec-
tors that can be individually erased. The Sector Erase command is a six bus cycle operation.
The sector address is latched on the falling WE edge of the sixth cycle while the 30H data
input command is latched on the rising edge of WE. The sector erase starts after the rising
edge of WE of the sixth cycle. The erase operation is internally controlled; it will automatically
time to completion. The maximum time to erase a section is t
SEC
. When the sector program-
ming lockout feature is not enabled, the sector will erase (from the same sector erase
command). Once a sector has been protected, data in the protected sectors cannot be
changed unless the RESET pin is taken to 12V ± 0.5V. An attempt to erase a sector that has
been protected will result in the operation terminating in 2 µs.
BYTE/WORD PROGRAMMING:
Once a memory block is erased, it is programmed (to a logi-
cal “0”) on a byte-by-byte or on a word-by-word basis. Programming is accomplished via the
internal device command register and is a 4-bus cycle operation. The device will automatically
generate the required internal program pulses.
Any commands written to the chip during the embedded programming cycle will be ignored. If
a hardware reset happens during programming, the data at the location being programmed
will be corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase
operations can convert “0”s to “1”s. Programming is completed after the specified t
BP
cycle
time. The DATA polling feature or the toggle bit feature may be used to indicate the end of a
program cycle.
SECTOR PROGRAMMING LOCKOUT:
Each sector has a programming lockout feature. This
feature prevents programming of data in the designated sectors once the feature has been
enabled. These sectors can contain secure code that is used to bring up the system. Enabling
the lockout feature will allow the boot code to stay in the device while data in the rest of the
device is updated. This feature does not have to be activated; any sector’s usage as a write
protected region is optional to the user.
Once the feature is enabled, the data in the protected sectors can no longer be erased or pro-
grammed when input levels of 5.5V or less are used. Data in the remaining sectors can still be
changed through the regular programming method. To activate the lockout feature, a series of
six program commands to specific addresses with specific data must be performed. Please
refer to the Command Definitions table.
SECTOR LOCKOUT DETECTION:
A software method is available to determine if program-
ming of a sector is locked out. When the device is in the software product identification mode
(see Software product Identification Entry and Exit sections) a read from address location
00002H within a sector will show if programming the sector is locked out. If the data on I/O0 is
low, the sector can be programmed; if the data on I/O0 is high, the program lockout feature
has been enabled and the sector cannot be programmed. The software product identification
exit code should be used to return to standard operation.
SECTOR PROGRAMMING LOCKOUT OVERRIDE:
The user can override the sector pro-
gramming lockout by taking the RESET pin to 12V ± 0.5V. By doing this protected data can be
altered through a chip erase, sector erase or byte/word programming. When the RESET pin is
brought back to TTL levels the sector programming lockout feature is again active.
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AT49F8011(T)
1264D–FLASH–5/03
AT49F8011(T)
ERASE SUSPEND/ERASE RESUME:
The erase suspend command allows the system to
interrupt a sector erase operation and then program or read data from a different sector within
the same plane. Since this device has a dual plane architecture, there is no need to use the
erase suspend feature while erasing a sector when you want to read data from a sector in the
other plane. After the erase suspend command is given, the device requires a maximum time
of 15 µs to suspend the erase operation. After the erase operation has been suspended, the
plane which contains the suspended sector enters the erase-suspend-read mode. The system
can then read data or program data to any other sector within the device. An address is not
required during the erase suspend command. During a sector erase suspend, another sector
cannot be erased. To resume the sector erase operation, the system must write the erase
resume command. The erase resume command is a one bus cycle command that does
require the plane address which is determined by A18 - A16. The device also supports an
erase suspend during a complete chip erase. While the chip erase is suspended, the user can
read from any sector within the memory that is protected. The command sequence for a chip
erase suspend and a sector erase suspend are the same.
PRODUCT IDENTIFICATION:
The product identification mode identifies the device and man-
ufacturer as Atmel. It may be accessed by hardware or software operation. The hardware
operation mode can be used by an external programmer to identify the correct programming
algorithm for the Atmel product.
For details, see Operating Modes (for hardware operation) or Software Product Identification.
The manufacturer and device code is the same for both modes.
DATA POLLING:
The AT49F8011(T) features DATA polling to indicate the end of a program
cycle. During a program cycle an attempted read of the last byte/word loaded will result in the
complement of the loaded data on I/O7. Once the program cycle has been completed, true
data is valid on all outputs and the next cycle may begin. During a chip or sector erase opera-
tion, an attempt to read the device will give a “0” on I/O7. Once the program or erase cycle has
completed, true data will be read from the device. DATA polling may begin at any time during
the program cycle. Please see “Status Bit Table” for more details.
TOGGLE BIT:
In addition to DATA polling the AT49F8011(T) provides another method for
determining the end of a program or erase cycle. During a program or erase operation, suc-
cessive attempts to read data from the same memory plane will result in I/O6 toggling between
one and zero. Once the program cycle has completed, I/O6 will stop toggling and valid data
will be read. Examining the toggle bit may begin at any time during a program cycle.
An additional toggle bit is available on I/O2 which can be used in conjunction with the toggle
bit which i s avai lable on I/O6. W hile a s ector i s eras e sus pended, a read or a
program operation from the suspended sector will result in the I/O2 bit toggling. Please see
“Status Bit Table” for more details.
RDY/BUSY:
An open drain READY/BUSY output pin provides another method of detecting
the end of a program or erase operation. RDY/BUSY is actively pulled low during the internal
program and erase cycles and is released at the completion of the cycle. The open drain con-
nection allows for OR-tying of several devices to the same RDY/BUSY line.
HARDWARE DATA PROTECTION:
Hardware features protect against inadvertent programs
to the AT49F8011(T) in the following ways: (a) V
CC
sense: if V
CC
is below 3.8V (typical), the
program function is inhibited. (b) V
CC
power on delay: once V
CC
has reached the V
CC
sense
level, the device will automatically time out 10 ms (typical) before programming. (c) Program
inhibit: holding any one of OE low, CE high or WE high inhibits program cycles. (d) Noise filter:
pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a program cycle.
INPUT LEVELS:
While operating with a 4.5V to 5.5V power supply, the address inputs and
control inputs (OE, CE, and WE) may be driven from 0 to 5.5V without adversely affecting the
operation of the device. The I/O lines can only be driven from 0 to V
CC
+ 0.6V.
5
1264D–FLASH–5/03
Embedded System
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