MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MCM6946/D
Advance Information
MCM6946
512K x 8 Bit Static Random
Access Memory
The MCM6946 is a 4,194,304–bit static random access memory organized as
524,288 words of 8 bits. Static design eliminates the need for external clocks or
timing strobes.
The MCM6946 is equipped with chip enable (E) and output enable (G) pins,
allowing for greater system flexibility and eliminating bus contention problems.
Either input, when high, will force the outputs into high–impedance.
The MCM6946 is available in a 400 mil, 36–lead surface–mount SOJ package.
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•
•
•
•
•
Single 3.3 V – 5%, + 10% Power Supply
Fast Access Time: 8/10/12/15 ns
Equal Address and Chip Enable Access Time
All Inputs and Outputs are TTL Compatible
Three–State Outputs
Power Operation: 195/185 / 180 / 175 mA Maximum, Active AC
Available in TSOP or SOJ Packages
YJ PACKAGE
400 MIL SOJ
CASE 893–02
TS PACKAGE
44–LEAD
TSOP TYPE II
CASE 924A–02
PIN NAMES
A0 – A18 . . . . . . . . . . . . . . . Address Inputs
W . . . . . . . . . . . . . . . . . . . . . . . Write Enable
G . . . . . . . . . . . . . . . . . . . . . Output Enable
E . . . . . . . . . . . . . . . . . . . . . . . . Chip Enable
DQ . . . . . . . . . . . . . . . . . Data Input/Output
NC . . . . . . . . . . . . . . . . . . . . No Connection
VCC . . . . . . . . . . . . . + 3.3 V Power Supply
VSS . . . . . . . . . . . . . . . . . . . . . . . . . Ground
This document contains information on a new product. Specifications and information herein are subject to change without notice.
REV 5
3/31/98
©
Motorola, Inc. 1998
MOTOROLA FAST SRAM
MCM6946
1
BLOCK DIAGRAM
A
A
A
A
A
A
A
A
A
A
ROW
DECODER
MEMORY MATRIX
DQ
INPUT
DATA
CONTROL
DQ
A
A
A
COLUMN I/O
COLUMN DECODER
A
A
A
A
A
A
DQ
E
W
G
DQ
MCM6946
2
MOTOROLA FAST SRAM
PIN ASSIGNMENTS
400 MIL SOJ
A
A
A
A
A
E
DQ
DQ
VCC
VSS
DQ
DQ
W
A
A
A
A
A
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A
A
A
A
G
DQ
DQ
VSS
VCC
DQ
DQ
A
A
A
A
A
NC
NC
NC
A
A
A
A
A
E
DQ
DQ
VDD
VSS
DQ
DQ
W
A
A
A
A
A
NC
NC
TSOP TYPE II
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
NC
A
A
A
A
G
DQ
DQ
VSS
VDD
DQ
DQ
A
A
A
A
A
NC
NC
NC
MOTOROLA FAST SRAM
MCM6946
3
TRUTH TABLE
(X = Don’t Care)
E
H
L
L
L
G
X
H
L
X
W
X
H
H
L
Mode
Not Selected
Output Disabled
Read
Write
I/O Pin
High–Z
High–Z
Dout
High–Z
Cycle
—
—
Read
Write
Current
ISB1, ISB2
ICCA
ICCA
ICCA
ABSOLUTE MAXIMUM RATINGS
(See Note)
Rating
Power Supply Voltage Relative to VSS
Voltage Relative to VSS for Any Pin
Except VCC
Output Current (per I/O)
Power Dissipation
Temperature Under Bias
Operating Temperature
Storage Temperature — Plastic
Symbol
VCC
Vin, Vout
Iout
PD
Tbias
TA
Tstg
Value
– 0.5 to + 5.0
– 0.5 to VCC + 0.5
±
20
1.0
– 10 to + 85
0 to + 70
– 55 to + 150
Unit
V
V
mA
W
°C
°C
°C
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to these high–impedance
circuits.
This BiCMOS memory circuit has been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board and
transverse air flow of at least 500 linear feet per
minute is maintained.
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
MCM6946
4
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 3.3 V – 5%, + 10%, TA = 0 to + 70°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage (Operating Voltage Range)
Input High Voltage
Input Low Voltage
Symbol
VCC
VIH
VIL
Min
3.135
2.2
– 0.5
*
Typ
3.3
—
—
Max
3.6
VCC + 0.3**
0.8
Unit
V
V
V
* VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width
≤
2.0 ns).
** VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2.0 V ac (pulse width
≤
2.0 ns).
DC CHARACTERISTICS
Parameter
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Output Leakage Current (E = VIH, Vout = 0 to VCC)
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
Symbol
Ilkg(I)
Ilkg(O)
VOL
VOH
Min
—
—
—
2.4
Max
±
1.0
±
1.0
0.4
—
Unit
µA
µA
V
V
POWER SUPPLY CURRENTS
Parameter
AC Active Supply Current
(Iout = 0 mA, VCC = Max)
MCM6946–8: tAVAV = 8 ns
MCM6946–10: tAVAV = 10 ns
MCM6946–12: tAVAV = 12 ns
MCM6946–15: tAVAV = 15 ns
MCM6946–8: tAVAV = 8 ns
MCM6946–10: tAVAV = 10 ns
MCM6946–12: tAVAV = 12 ns
MCM6946–15: tAVAV = 15 ns
Symbol
ICC
0 to 70°C
195
185
180
175
55
50
50
45
20
Unit
mA
AC Standby Current (VCC = Max, E = VIH,
No Other Restrictions on Other Inputs)
ISB1
mA
CMOS Standby Current (E
≥
VCC – 0.2 V, Vin
≤
VSS + 0.2 V or
≥
VCC – 0.2 V)
(VCC = Max, f = 0 MHz)
ISB2
mA
CAPACITANCE
(f = 1.0 MHz, dV = 3.3 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Input Capacitance
Input/Output Capacitance
All Inputs Except Clocks and DQs
E, G, W
DQ
Symbol
Cin
Cck
CI/O
Typ
4
5
5
Max
6
8
8
Unit
pF
pF
MOTOROLA FAST SRAM
MCM6946
5
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