6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on
production test equipment. Circut losses have been de-embeaded from actual measurements.
2
ATF-54143 Electrical Specifications
T
A
= 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Vgs
Vth
Idss
Gm
Igss
NF
Ga
OIP3
P1dB
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Gate Leakage Current
Noise Figure
[1]
Associated Gain
[1]
Output 3
rd
Order
Intercept Point
[1]
1dB Compressed
Output Power
[1]
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
f = 2 GHz
f = 900 MHz
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 4 mA
Vds = 3V, Vgs = 0V
Vds = 3V, gm =
∆Idss/∆Vgs;
∆Vgs
= 0.75 - 0.7 = 0.05V
Vgd = Vgs = -3V
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Vds = 3V, Ids = 60 mA
Units
V
V
µA
mmho
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Min.
0.4
0.18
—
230
—
—
—
15
—
33
—
—
—
Typ.
[2]
0.59
0.38
1
410
—
0.5
0.3
16.6
23.4
36.2
35.5
20.4
18.4
Max.
0.75
0.52
5
560
200
0.9
—
18.5
—
—
—
—
—
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values measured from a sample size of 450 parts from 9 wafers.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag
= 0.30
Γ_ang
= 150°
(0.3 dB loss)
DUT
Output
Matching Circuit
Γ_mag
= 0.035
Γ_ang
= -71°
(0.4 dB loss)
50 Ohm
Transmission
Line Including
Drain Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit repre-
sents a trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from
actual measurements.
3
ATF-54143 Typical Performance Curves
0.7
0.6
0.5
0.4
19
18
17
0.5
0.6
GAIN (dB)
3V
4V
Fmin (dB)
Fmin (dB)
16
15
14
13
12
3V
4V
0.3
0.2
0.4
3V
4V
0.3
0.1
0
0
20
40
I
d
(mA)
60
80
0.2
0
20
40
I
d
(mA)
60
80
100
100
0
20
40
60
80
100
I
ds
(mA)
Figure 6. Fmin vs. I
ds
and V
ds
Tuned for
Max OIP3 and Fmin at 2 GHz.
25
24
23
Figure 7. Fmin vs. I
ds
and V
ds
Tuned for
Max OIP3 and Min NF at 900 MHz.
42
37
32
Figure 8. Gain vs. I
ds
and V
ds
Tuned for
Max OIP3 and Fmin at 2 GHz.
40
35
OIP3 (dBm)
OIP3 (dBm)
GAIN (dB)
22
21
20
19
18
0
20
40
60
80
100
I
ds
(mA)
3V
4V
30
27
22
17
12
0
20
40
60
80
100
I
ds
(mA)
3V
4V
25
3V
4V
20
15
0
20
40
60
80
100
I
ds
(mA)
Figure 9. Gain vs. I
ds
and V
ds
Tuned for
Max OIP3 and Fmin at 900 MHz.
24
22
20
18
16
14
12
0
20
40
60
80
100
I
dq
(mA)
[1]
3V
4V
Figure 10. OIP3 vs. I
ds
and V
ds
Tuned for
Max OIP3 and Fmin at 2 GHz.
23
22
21
Figure 11. OIP3 vs. I
ds
and V
ds
Tuned for
Max OIP3 and Fmin at 900 MHz.
35
30
25
25°C
-40°C
85°C
P1dB (dBm)
P1dB (dBm)
GAIN (dB)
3V
4V
20
19
18
17
16
15
0
20
40
60
80
100
I
dq
(mA)
[1]
20
15
10
5
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 12. P1dB vs. I
dq
and V
ds
Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 13. P1dB vs. I
dq
and V
ds
Tuned for
Max OIP3 and Fmin at 900 MHz.
Figure 14. Gain vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
Notes:
1. I
dq
represents the quiescent drain current
without RF drive applied. Under low values of
I
ds
, the application of RF drive will cause I
d
to
increase substantially as P1dB is approached.
2. Fmin values at 2 GHz and higher are based on
measurements while the Fmins below 2 GHz
have been extrapolated. The Fmin values are
based on a set of 16 noise figure measure-
ments made at 16 different impedances using
an ATN NP5 test system. From these
measurements a true Fmin is calculated.
Refer to the noise parameter application
section for more information.
4
ATF-54143 Typical Performance Curves,
continued
2
25°C
-40°C
85°C
45
40
35
21
20.5
20
1.5
P1dB (dBm)
25°C
-40°C
85°C
OIP3 (dBm)
Fmin (dB)
19.5
19
18.5
18
17.5
17
25°C
-40°C
85°C
30
25
20
15
1.0
0.5
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
10
0
1
2
3
4
5
6
FREQUENCY (GHz)
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 15. Fmin
[2]
vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
1.4
1.2
1.0
Figure 16. OIP3 vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
Figure 17. P1dB vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
Fmin (dB)
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
60 mA
40 mA
80 mA
Figure 18. Fmin
[1]
vs. Frequency and I
ds
at 3V.
ATF-54143 Reflection Coefficient Parameters tuned for Maximum Output IP3,
V
DS
= 3V, I
DS
= 60 mA
Freq
(GHz)
0.9
2.0
3.9
5.8
ΓOut_Mag.
[1]
(Mag)
0.017
0.026
0.013
0.025
ΓOut_Ang.
[1]
(Degrees)
115
-85
173
102
OIP3
(dBm)
35.54
36.23
37.54
35.75
P1dB
(dBm)
18.4
20.38
20.28
18.09
Note:
1. Fmin values at 2 GHz and higher are based on
measurements while the Fmins below 2 GHz
have been extrapolated. The Fmin values are
based on a set of 16 noise figure measure-
ments made at 16 different impedances using
an ATN NP5 test system. From these
measurements a true Fmin is calculated.
Refer to the noise parameter application
section for more information.
Note:
1. Gamma out is the reflection coefficient of the matching circuit presented to the output of the device.
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