BIPOLARICS, INC.
Part Number B12V105
NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
PRODUCT DATA SHEET
FEATURES:
•
High Gain Bandwidth Product
f = 10 GHz typ @ I
C
= 10 mA
t
DESCRIPTION AND APPLICATIONS:
Bipolarics' B12V105 is a high performance silicon bipolar
transistor intended for use in low noise application at VHF,
UHF and microwave frequencies. High performance low
noise performance can be realized at 2 mA or less making the
B12V105 an excellent choice for battery applications. From
10 mA to greater than 25 mA, f
t
is nominally 10 GHz.
Maximum recommended continuous current is 40 mA. A
broad range of packages are offered including SOT-23, SOT-
143, plastic and ceramic 0.085" Micro-X, 0.070" Stripline and
unencapsulated dice.
•
Low Noise Figure
1.6 dB typ at 1 GHz
2.0 dB typ at 2 GHz
•
High Gain
|S
21
|
2
= 18.1 dB @ 1 GHz
12.8 dB @ 2 GHz
Absolute Maximum Ratings:
SYMBOL
PARAMETERS
RATING
UNITS
•
Dice, Plastic, Hermetic and Surface
Mount packages available
V
CBO
V
CEO
V
EBO
I
C CONT
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
20
12
1.5
40
200
-65 to 150
V
V
V
mA
o
C
o
C
PERFORMANCE DATA:
•
Electrical Characteristics (T
A
= 25
o
C)
PARAMETERS & CONDITIONS
V
CE
=8V, I
C
= 10 mA unless stated
SYMBOL
UNIT
MIN.
TYP.
MAX.
f
t
Gain Bandwidth Product
Insertion Power Gain:
f = 1.0 GHz, I
C
= 10 mA
I
C
= 25 mA
f = 2.0 GHz, I
C
= 10 mA
I
C
= 25 mA
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
Z
S
= 50Ω
f = 1MHz
GHz
10
17.5
18.1
12.8
12.6
|S
21
|
2
P
1d B
G
1d B
NF
h
FE
I
CBO
I
EBO
C
CB
Power output at 1dB compression:
Gain at 1dB compression:
Noise Figure: V
CE
=8V, I
C
= 2mA
Forward Current Transfer Ratio:
V
CE
= 8V, I
C
= 10 mA
Collector Cutoff Current
Emitter Cutoff Current : V
EB
=1V
Collector Base Capacitance: V
CB
= 8V
: V
CB
=8V
dBm
dBm
dB
50
12
15
1.6
100
250
µA
µA
f = 1MHz
pF
0.11
0.2
1.0
Microcontroller MCU
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