Ordering number : ENN6796
MCH6615
N-Channel and P-Channel Silicon MOSFETs
MCH6615
Ultrahigh-Speed Switching Applications
Features
•
Package Dimensions
unit : mm
2173
[MCH6615]
0.25
•
•
The MCH6615 incorporates two elements in the same
package which are N-channel and P-channel low
ON resistance and high-speed switching MOSFETs,
thereby enabling high-density mounting.
Low ON-resistance.
2.5V drive.
0.3
0.15
6
5
4
1.6
2.1
1
0.25
2 3
0.65
2.0
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm
2
!0.8mm)1unit
Conditions
N-channel
30
±10
0.65
2.6
0.8
150
--55 to +150
0.15
0.85
P-channel
-
-30
±10
--0.4
--1.6
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=150mA
ID=150mA, VGS=4V
ID=80mA, VGS=2.5V
ID=10mA, VGS=1.5V
0.4
400
560
0.9
1.2
2.6
1.2
1.7
5.2
30
10
±10
1.3
V
µA
µA
V
mS
Ω
Ω
Ω
Symbol
Conditions
Ratings
min
typ
max
Unit
Marking : FP
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
GI IM
20101 TS IM TA-2910 No.6796-1/6
MCH6615
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=-
-1mA, VGS=0
VDS=-
-30V, VGS=0
VGS=±8V, VDS=0
VDS=-
-10V, ID=--100µA
VDS=-
-10V, ID=--100mA
ID=-
-100mA, VGS=--4V
ID=-
-50mA, VGS=-
-2.5V
ID=-
-10mA, VGS=-
-1.5V
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
VDS=-
-10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=-
-10V, VGS=--10V, ID=--200mA
VDS=-
-10V, VGS=--10V, ID=--200mA
VDS=-
-10V, VGS=--10V, ID=--200mA
IS=--200mA, VGS=0
--0.4
210
300
2.4
3.5
10
28
15
5.2
24
75
200
150
2
0.25
0.35
--0.82
--1.2
3.1
4.9
20
--30
--10
±10
--1.4
V
µA
µA
V
mS
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=300mA
VDS=10V, VGS=10V, ID=300mA
VDS=10V, VGS=10V, ID=300mA
IS=300mA, VGS=0
Ratings
min
typ
30
15
10
32
110
250
160
2.34
0.38
0.45
0.8
1.2
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
[N-channel]
4V
0V
VIN
VIN
VDD=15V
ID=150mA
RL=100Ω
[P-channel]
0V
--4V
VIN
VIN
VDD= --15V
ID= --100mA
RL=150Ω
VOUT
PW=10µs
D.C.≤1%
D
G
VOUT
PW=10µs
D.C.≤1%
D
G
MCH6615
P.G
50Ω
P.G
MCH6615
50Ω
S
S
Electrical Connection
D1
G2
S2
(Top view)
S1
G1
D2
No.6796-2/6
MCH6615
0.30
ID -- VDS
2.5
V
3.5V
4.0V
3.0V
[Nch]
--0.20
--0.18
--0.16
ID -- VDS
0V
--3
.0
V
[Pch]
0.25
6.0V
--4
.
Drain Current, ID -- A
Drain Current, ID -- A
--2
.5
V
2.0
0.20
V
--6.
--0.14
--0.12
--0.10
--0.08
--0.06
--0.04
--0.02
0V
--3.5V
.
--2
0V
0.15
VGS=1.5V
0.10
VGS= --1.5V
0.05
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0
--0.1
--0.2 --0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
Drain-to-Source Voltage, VDS -- V
0.6
IT00224
ID -- VGS
Drain-to-Source Voltage, VDS -- V
--0.40
--0.35
--0.30
--0.25
--0.20
--0.15
--0.10
--0.05
IT00237
[Nch]
ID -- VGS
[Pch]
VDS= --10V
25
°
C
75
°
VDS=10V
0.5
C
Ta=
--25
°
C
75
°
C
0
--0.5
--1.0
--1.5
--2.0
Ta=
--
Drain Current, ID -- A
0.4
0.3
0.2
0.1
Drain Current, ID -- A
25
0
0
0.5
1.0
1.5
2.0
2.5
IT00225
0
--2.5
--3.0
--3.5
IT00238
Gate-to-Source Voltage, VGS -- V
3.0
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
8
7
6
5
[Nch]
Ta=25°C
RDS(on) -- VGS
25
°
C
°
C
[Pch]
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
2.5
2.0
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
ID= --100mA
4
1.5
ID=150mA
80mA
1.0
--50mA
3
2
1
0
0.5
0
0
1
2
3
4
5
6
7
8
9
10
0
--1
--2
--3
--4
--5
--6
--7
--8
--9
--10
Gate-to-Source Voltage, VGS -- V
10
7
IT00226
Gate-to-Source Voltage, VGS -- V
10
IT00239
RDS(on) -- ID
[Nch]
VGS=4V
RDS(on) -- ID
[Pch]
VGS= --4V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5
3
2
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
7
5
Ta=75°C
1.0
7
5
3
2
3
Ta=75°C
25°C
--25°C
25°C
2
--25°C
0.1
0.01
2
3
5
7
0.1
2
3
5
Drain Current, ID -- A
1.0
IT00227
7
1.0
--0.01
2
3
5
7
--0.1
2
3
5
IT00240
Drain Current, ID -- A
No.6796-3/6
MCH6615
10
7
RDS(on) -- ID
[Nch]
VGS=2.5V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
10
RDS(on) -- ID
[Pch]
VGS= --2.5V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
5
3
2
7
5
Ta=75°C
--25°C
25°C
Ta=75°C
25°C
3
1.0
7
5
3
2
--25°C
2
0.1
0.01
2
3
5
7
0.1
2
3
5
7
1.0
1.0
--0.01
2
3
5
7
--0.1
2
3
5
IT00241
Drain Current, ID -- A
10
IT00228
RDS(on) -- ID
Drain Current, ID -- A
100
7
[Nch]
VGS=1.5V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
RDS(on) -- ID
[Pch]
VGS= --1.5V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
7
5
3
2
5
Ta=75°C
10
7
5
3
2
3
Ta=75°C
--25°C
25°C
--25°C
2
25°C
1.0
0.001
2
3
5
7
0.01
2
3
1.0
--0.001
2
3
5
7
--0.01
2
3
Drain Current, ID -- A
3.0
IT00229
Drain Current, ID -- A
7
IT00242
RDS(on) -- Ta
[Nch]
RDS(on) -- Ta
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
2.5
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
6
5
2.0
1.5
1.0
V
=2.5
VGS
,
0mA
I D=8
=4.0V
A, V GS
0m
I D=15
4
3
--5
I D=
0mA
= --2
, V GS
.5V
--1
I D=
2
00m
V
--4.0
S=
A, VG
0.5
1
0
--60
0
--60
--40
--20
0
20
40
60
80
100
120
140
--40
--20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
10
IT00230
Ambient Temperature, Ta --
°C
1.0
|
y
fs| -- ID
[Nch]
Forward Transfer Admittance,
y
fs -- S
y
fs -- ID
IT00243
Forward Transfer Admittance, |
y
fs| -- S
7
5
3
2
VDS=10V
7
5
3
2
[Pch]
VDS= --10V
--
Ta=
25
°
C
75
°
C
0.1
7
5
3
2
1.0
7
5
3
2
--25
Ta=
°
C
75
°
C
25
°
C
C
25
°
0.1
0.01
2
3
5
7
0.1
2
3
5
Drain Current, ID -- A
1.0
IT00231
7
0.01
--0.01
2
3
5
7
--0.1
2
3
5
IT00244
Drain Current, ID -- A
No.6796-4/6
MCH6615
1.0
7
5
IF -- VSD
[Nch]
VGS=0
--1.0
7
5
IF -- VSD
[Pch]
VGS=0
Forward Current, IF -- A
3
2
Forward Current, IF -- A
3
2
Ta=7
5
°
C
25
°
C
--25
°
C
0.1
7
5
3
2
--0.1
7
5
3
2
Ta=
75
°
C
25
°
C
--0.7
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT00232
--0.01
--0.4
--0.5
--0.6
--25
°
C
--0.8
--0.9
--1.0
IT00245
Diode Forward Voltage, VSD -- V
1000
7
SW Time -- ID
Diode Forward Voltage, VSD -- V
1000
7
Switching Time, SW Time -- ns
3
2
td(off)
tf
tr
Switching Time, SW Time -- ns
5
[Nch]
VDD=15V
VGS=4V
SW Time -- ID
[Pch]
VDD= --15V
VGS= --4V
5
3
2
td(off)
tf
tr
td(on)
100
7
5
100
7
5
3
2
td(on)
3
2
10
0.01
2
3
5
7
0.1
2
3
5
IT00233
10
--0.01
2
3
5
7
--0.1
2
3
100
7
5
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
[Nch]
f=1MHz
100
7
5
Ciss, Coss, Crss -- VDS
Drain Current, ID -- A
IT00246
[Pch]
f=1MHz
Ciss, Coss, Crss -- pF
3
2
Ciss, Coss, Crss -- pF
Ciss
3
2
Ciss
Coss
10
7
5
3
2
Coss
Crss
10
7
5
3
2
1.0
Crss
1.0
0
5
10
15
20
25
30
IT00234
0
--5
--10
--15
--20
--25
--30
IT00247
Drain-to-Source Voltage, VDS -- V
10
9
Drain-to-Source Voltage, VDS -- V
--10
--9
VGS -- Qg
VDS=10V
ID=300mA
[Nch]
VDS= --10V
ID= --200mA
VGS -- Qg
[Pch]
Gate-to-Source Voltage, VGS -- V
Gate-to-Source Voltage, VGS -- V
8
7
6
5
4
3
2
1
0
0
0.5
1.0
1.5
2.0
2.5
IT00235
--8
--7
--6
--5
--4
--3
--2
--1
0
0
0.5
1.0
1.5
2.0
2.5
IT00248
Total Gate Charge, Qg -- nC
Total Gate Charge, Qg -- nC
No.6796-5/6
京公网安备 11010802033920号
EEWORLD
