MCH5801 datasheet, PDF - EEWORLD Datasheet

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MCH5801: DescriptionDC / DC Converter Applications; CategoryDiscrete semiconductor The transistor; File Size41KB，5 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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MCH5801 Overview

DC / DC Converter Applications

MCH5801 Parametric

Parameter Name	Attribute value
Maker	SANYO
package instruction	SMALL OUTLINE, R-PDSO-F5
Contacts	5
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	1.5 A
Maximum drain-source on-resistance	0.21 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F5
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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Ordering number : ENN6941

MCH5801

MOSFET : N-Channel Silicon MOSFET

SBD : Schottky Barrier Diode

MCH5801

DC / DC Converter Applications

Features

•

Package Dimensions

Composite type with an N-Channel Sillicon MOSFET unit : mm

(MCH3405) and a Schottky Barrier Diode (SBS007M)

2195

contained in one package facilitating high-density

mounting.

[MOSFET]

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

1.8V drive.

[SBD]

•

Short reverse recovery time.

•

Low forward voltage.

2.1

[MCH5801]

0.3

0.15

0.25

1.6

0.25

0.65

2.0

0.07

0.85

1 : Gate

2 : Source

3 : Anode

4 : Cathode

5 : Drain

SANYO : MCPH5

Specifications

Absolute Maximum Ratings

at Ta=25°C

Parameter

[MOSFET]

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

[SBD]

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

VRRM

VRSM

IFSM

Tstg

50Hz sine wave, 1 cycle

0.5

--55 to +125

°C

VDSS

VGSS

IDP

Tch

Tstg

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board

(900mm

!0.8mm)

1unit

±10

1.5

0.8

150

--55 to +125

°C

Symbol

Conditions

Ratings

Unit

Marking : QA

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62501 TS IM TA-3100 No.6941-1/5

MCH5801

IS -- t

[SBD]

Surge Forward Current, IFSM(Peak) -- A

Current waveform 50Hz sine wave

20ms

7 0.01

7 0.1

7 1.0

Time, t -- s

IT00636

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of June, 2001. Specifications and information herein are subject

to change without notice.

PS No.6941-5/5

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