MCH3406 datasheet, PDF - EEWORLD Datasheet

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MCH3406: DescriptionUltrahigh-Speed Switching Applications; CategoryDiscrete semiconductor The transistor; File Size30KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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MCH3406 Overview

Ultrahigh-Speed Switching Applications

MCH3406 Parametric

Parameter Name	Attribute value
Maker	SANYO
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (Abs) (ID)	3 A
Maximum drain current (ID)	3 A
Maximum drain-source on-resistance	0.063 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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Ordering number : ENN6970

2SK3495

N-Channel Silicon MOSFET

2SK3495

Ultrahigh-Speed Switching Applications

Features

•

Package Dimensions

unit : mm

2087A

[2SK3495]

1.45

6.9

1.0

2.5

Low ON-resistance.

Ultrahigh-speed switching.

4V drive.

Meets radial taping.

4.5

1.0

0.6

1.0

0.9

0.5

0.45

Specifications

Absolute Maximum Ratings

at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Symbol

VDSS

VGSS

IDP

Tch

Tstg

PW≤10µs, duty cycle≤1%

Conditions

1 : Source

2 : Drain

3 : Gate

2.54

SANYO : NMP

Ratings

±20

1.2

4.8

150

--55 to +150

Unit

°C

Electrical Characteristics

at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Sourse Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)



yfs



RDS(on)1

RDS(on)2

Conditions

ID=1mA, VGS=0

VDS=60V, VGS=0

VGS=±16V, VDS=0

VDS=10V, ID=1mA

VDS=10V, ID=0.6A

ID=0.6A, VGS=10V

ID=0.6A, VGS=4V

Ratings

min

±10

1.0

1.5

380

500

680

2.4

typ

max

Unit

µA

mΩ

Continued on next page

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52501 TS IM TA-3256 No.6970-1/4

4.0

1.0

2SK3495

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of May, 2001. Specifications and information herein are subject

to change without notice.

PS No.6970-4/4

MCH3406 Related Products

	MCH3406	2SK3495	3LP01C
Description	Ultrahigh-Speed Switching Applications	Small Signal Field-Effect Transistor, 1.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, NMP, 3 PIN	Ultrahigh-Speed Switching Applications
package instruction	SMALL OUTLINE, R-PDSO-F3	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3
Reach Compliance Code	unknow	unknown	unknow
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V	60 V	30 V
Maximum drain current (Abs) (ID)	3 A	1.2 A	0.1 A
Maximum drain current (ID)	3 A	1.2 A	0.1 A
Maximum drain-source on-resistance	0.063 Ω	0.68 Ω	10.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F3	R-PSIP-T3	R-PDSO-G3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	1 W	1 W	0.25 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	YES
Terminal form	FLAT	THROUGH-HOLE	GULL WING
Terminal location	DUAL	SINGLE	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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