MCD312-12io1
Thyristor \ Diode Module
V
RRM
I
TAV
V
T
=
2x 1200 V
=
=
320 A
1.06 V
Phase leg
Part number
MCD312-12io1
Backside: isolated
3
1
5
4
2
Features / Advantages:
●
International standard package
●
Direct copper bonded Al2O3-ceramic
with copper base plate
●
Planar passivated chip
●
Isolation voltage 3600 V~
●
Keyed gate/cathode twin pins
Applications:
●
Motor control, softstarter
●
Power converter
●
Heat and temperature control for
industrial furnaces and chemical
processes
●
Lighting control
●
Solid state switches
Package:
Y1
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Soldering pins for PCB mounting
●
Base plate: Copper
internally DCB isolated
●
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116e
© 2017 IXYS all rights reserved
MCD312-12io1
Rectifier
Symbol
V
RSM/DSM
V
RRM/DRM
I
R/D
V
T
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 140°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 140 °C
T
VJ
= 140 °C
min.
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
Ratings
typ.
max. Unit
1300
V
1200
1
40
1.12
1.32
1.06
1.29
320
520
0.80
0.68
0.040
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 140 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 140 °C
V
R
= 0 V
T
VJ
= 25°C
T
C
= 140 °C
438
120
60
20
T
VJ
= 140 °C; f = 50 Hz
repetitive, I
T
= 960 A
t
P
= 200 µs; di
G
/dt = 1 A/µs;
I
G
=
1 A; V =
⅔
V
DRM
non-repet., I
T
= 320 A
T
VJ
= 140°C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 140°C
T
VJ
= 25 °C
T
VJ
= 25 °C
T
VJ
= 25 °C
1 A/µs
200
µs
50 V/µs t
p
= 200 µs
V =
⅔
V
DRM
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
V
D
= 6 V
V
D
=
⅔
V
DRM
t
p
=
30 µs
960
9.60
10.4
8.16
8.82
V
mA
mA
V
V
V
V
A
A
V
mΩ
K/W
W
kA
kA
kA
kA
V
R/D
= 1200 V
V
R/D
= 1200 V
I
T
= 300 A
I
T
= 600 A
I
T
= 300 A
I
T
= 600 A
I
TAV
I
T(RMS)
V
T0
r
T
R
thJC
R
thCH
P
tot
I
TSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 85 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.12 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
460.8 kA²s
447.4 kA²s
332.9 kA²s
323.3 kA²s
pF
W
W
W
C
J
P
GM
P
GAV
(di/dt)
cr
junction capacitance
max. gate power dissipation
V
R
= 400 V f = 1 MHz
t
P
= 30 µs
t
P
= 500 µs
average gate power dissipation
critical rate of rise of current
100 A/µs
500 A/µs
1000 V/µs
2
3
150
220
0.25
10
200
150
2
V
V
mA
mA
V
mA
mA
mA
µs
(dv/dt)
cr
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
holding current
gate controlled delay time
V
D
= 6 V R
GK
=
∞
V
D
= ½ V
DRM
I
G
=
1 A; di
G
/dt =
turn-off time
V
R
= 100 V; I
T
= 300 A; V =
⅔
V
DRM
T
VJ
=125 °C
di/dt = 10 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116e
© 2017 IXYS all rights reserved
MCD312-12io1
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
Y1
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
600
140
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
680
4.5
11
16.0
16.0
3600
3000
7
13
Production
Index (PI)
Date Code
(DC)
yywwAA
Circuit
Part Number
Lot.No: xxxxxx
Data Matrix:
part no.
(1-19), DC +
PI
(20-25),
lot.no.#
(26-31),
blank
(32),
serial no.#
(33-36)
Ordering
Standard
Ordering Number
MCD312-12io1
Marking on Product
MCD312-12io1
Delivery Mode
Box
Quantity
3
Code No.
461849
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Thyristor
* on die level
T
VJ
= 140 °C
V
0 max
R
0 max
0.8
0.5
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116e
© 2017 IXYS all rights reserved
MCD312-12io1
Outlines Y1
3x M8
15
±1
2.8 x 0.8
52
+0
-1,4
49
2
32
+0
-1,9
10
20
22.5
35
28.5
45 67
1
2
6.2
80
92
115
18
3
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
UL 758, style 3751
Type ZY 180R (R = Right for pin pair 6/7)
3
1
5
4
2
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
5
38
50
43
45
20170116e
© 2017 IXYS all rights reserved
MCD312-12io1
Thyristor
10000
50 Hz
80 % V
RRM
T
VJ
= 45°C
T
VJ
= 140°C
10
6
V
R
= 0 V
600
500
T
VJ
= 45°C
DC
180 ° sin
120 °
60 °
30 °
8000
I
TSM
6000
I
2
dt
10
5
400
T
VJ
= 140°C
I
T(AV)M
[A]
4000
300
[A
2
s]
[A]
200
2000
100
10
4
0.01
0.1
1
1
10
0
0
25
50
75
100 125 150
0
0.001
t [s]
Fig. 1 Surge overload current
I
TSM
:Crest value, t: duration
600
t [ms]
Fig. 2 I dt versus time
2
T
C
[°C]
Fig. 3 Max. forward current
at case temperature
10
1: I
GT
, T
VJ
= 140°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
R
thKA
K/W
500
400
P
tot
300
0.06
0.1
0.2
0.3
0.4
0.6
0.8
DC
180 ° sin
120 °
60 °
30 °
3
2
4
5
6
V
G
[V]
1
1
[W]
200
100
I
GD
, T
VJ
= 140°C
0
0
100 200 300 400 500
0
25
50
75
100
125
150
0.1
10
-3
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
10
-2
10
-1
10
0
10
1
10
2
I
T(AV)M
[A]
T
A
[°C]
I
G
[A]
Fig. 5 Gate voltage & gate current
Fig. 4 Power dissipation versus on-state current and
ambient temperature (per thyristor)
3000
R
thKA
K/W
100
0.02
0.04
0.07
0.1
0.15
0.2
0.3
2500
2000
P
tot
1500
t
gd
[µs]
T
VJ
= 25°C
10
[W]
1000
500
0
0
200
400
Circuit
B6
3xMCC312 or
3xMCD312
limit
typ.
1
600
800
0
25
50
75
100
125
150
0.01
0.1
1
10
I
DAVM
[A]
T
A
[°C]
I
G
[A]
Fig. 7 Gate controlled delay time t
gd
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116e
© 2017 IXYS all rights reserved
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