MCC 250
MCD 250
Thyristor Modules
Thyristor/Diode Modules
I
TRMS
= 2x450 A
I
TAVM
= 2x287 A
V
RRM
= 800-1800 V
3
2
7
6
1
5
4
V
RSM
V
DSM
V
900
1300
1500
1700
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
Type
Version 1
MCC
MCC
MCC
MCC
MCC
250-08io1
250-12io1
250-14io1
250-16io1
250-18io1
Version 1
MCD
MCD
MCD
MCD
MCD
250-08io1
250-12io1
250-14io1
250-16io1
250-18io1
Symbol
I
TRMS
, I
FRMS
I
TAVM
, I
FAVM
I
TSM
, I
FSM
Conditions
T
VJ
= T
VJM
T
C
= 85°C; 180° sine
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
Maximum Ratings
450
287
9000
9600
7800
8500
405 000
380 000
304 000
300 000
100
A
A
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A/μs
MCC
3
6 7 1
5 4 2
3
1
5 4 2
∫
i
2
dt
MCD
T
VJ
= 45°C
V
R
= 0
T
VJ
= T
VJM
V
R
= 0
Features
• International standard package
• Direct copper bonded Al
2
O
3
-ceramic
base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
• Keyed gate/cathode twin pins
Applications
• Motor control
• Power converter
• Heat and temperature control for
industrial furnaces and chemical
processes
• Lighting control
• Contactless switches
Advantages
• Space and weight savings
• Simple mounting
• Improved temperature and power cycling
• Reduced protection circuits
(di/dt)
cr
T
VJ
= T
VJM
;
repetitive, I
T
= 860 A
f = 50 Hz; t
P
= 200 μs
V
D
=
2
/
3
V
DRM
I
G
= 1 A;
di
G
/dt = 1 A/μs
non repetitive, I
T
= 290 A
800
1000
120
60
20
10
-40...+140
140
-40...+125
A/μs
V/μs
W
W
W
V
°C
°C
°C
V~
V~
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
= T
VJM
;
V
DR
=
2
/
3
V
DRM
R
GK
=
∞;
method 1 (linear voltage rise)
T
VJ
= T
VJM
;
I
T
= I
TAVM
;
t
P
= 30 μs
t
P
= 500 μs
50/60 Hz, RMS;
I
ISOL
≤
1 mA;
t = 1 min
t=1s
3000
3600
Mounting torque (M5)
Terminal connection torque (M8)
Typical including screws
2.5-5/22-44 Nm/lb.in.
12-15/106-132 Nm/lb.in.
320
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
1-4
419
MCC 250
MCD 250
Symbol
I
RRM
I
DRM
V
T
, V
F
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
Conditions
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
I
T
/I
F
= 600 A; T
VJ
= 25°C
For power-loss calculations only (T
VJ
= 140°C)
V
D
= 6 V;
V
D
= 6 V;
T
VJ
= T
VJM
;
T
VJ
T
VJ
T
VJ
T
VJ
=
=
=
=
25°C
-40°C
25°C
-40°C
Characteristic Values
70
40
1.36
0.85
0.82
2
3
150
200
0.25
10
200
150
2
typ. 200
760
275
0.129
0.0645
0.169
0.0845
12.7
9.6
50
mA
mA
V
V
mΩ
V
V
mA
mA
V
mA
mA
mA
μs
μs
μC
A
K/W
K/W
K/W
K/W
mm
mm
m/s
2
Fig. 1 Gate trigger characteristics
V
D
=
2
/
3
V
DRM
T
VJ
= 25°C; t
P
= 30 μs; V
D
= 6 V
I
G
= 0.45 A; di
G
/dt = 0.45 A/μs
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
∞
T
VJ
= 25°C; V
D
= ½ V
DRM
I
G
= 1 A; di
G
/dt = 1 A/μs
T
VJ
= T
VJM
; I
T
= 300 A, t
P
= 200 μs; -di/dt = 10 A/μs
V
R
= 100 V; dv/dt = 50 V/μs; V
D
=
2
/
3
V
DRM
T
VJ
= 125°C; I
T
/I
F
= 400 A, -di/dt = 50 A/μs
per
per
per
per
thyristor/diode; DC current
module
thyristor/diode; DC current
module
other values
see Fig. 8/9
Creepage distance on surface
Strike distance through air
Maximum allowable acceleration
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type
ZY 180L
(L = Left for pin pair 4/5)
UL 758, style 1385,
Type
ZY 180R
(R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
Dimensions in mm (1 mm = 0.0394")
MCC
MCD
Fig. 2 Gate trigger delay time
Threaded spacer for higher Anode/
Cathode construction:
Type
ZY 250,
material brass
20
12
14
IXYS reserves the right to change limits, test conditions and dimensions
2-4
© 2004 IXYS All rights reserved
419
MCC 250
MCD 250
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4
∫i
2
dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
IXYS reserves the right to change limits, test conditions and dimensions
© 2004 IXYS All rights reserved
3-4
419
MCC 250
MCD 250
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
0.15
K/W
30°
DC
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
R
thJC
for various conduction angles d:
Z
thJC
0.10
d
DC
180°C
120°C
60°C
30°C
R
thJC
(K/W)
0.129
0.131
0.131
0.132
0.132
0.05
Constants for Z
thJC
calculation:
i
0.00
10
-3
10
-2
10
-1
10
0
10
1
10
2
R
thi
(K/W)
0.0035
0.0165
0.1091
t
i
(s)
0.099
0.168
0.456
s
t
1
2
3
0.20
K/W
30°
DC
0.15
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
R
thJK
for various conduction angles d:
d
DC
180°C
120°C
60°C
30°C
R
thJK
(K/W)
0.169
0.171
0.172
0.172
0.173
Z
thJK
0.10
0.05
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
0.0033
0.0159
0.1053
0.04
t
i
(s)
0.099
0.168
0.456
1.36
419
0.00
10
-3
10
-2
10
-1
10
0
10
1
s
10
2
t
IXYS reserves the right to change limits, test conditions and dimensions
1
2
3
4
4-4
© 2004 IXYS All rights reserved
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