TC7MP85410FT
TC7MP85410FT
Octal Bus Buffer with Output Series Resistor
The TC7MP85410 is an advanced high-speed CMOS octal bus
buffer fabricated with silicon-gate CMOS technology. It achieves
high-speed operation similar to the equivalent bipolar Schottky
TTL while maintaining the CMOS low power dissipation. The
inputs are compatible with TTL voltage levels, so to the
TC7MP85410 can be used as a level converter for interfacing
3.3-V systems to 5-V systems.
The TC7MP85410 is a non-inverting bus buffer.
The outputs have 47-Ω (typ.) resistors connected in series, which
can reduce reflection noise without using external resistors.
Weight: 0.08 g (typ.)
Input and output protection circuits ensure that 0 to 5.5V can be
applied to the input and output*1 pins without regard to the
supply voltage.
Since power-down protection is provided on both inputs and outputs, the TC7MP85410 can be used in a wide range
of applications, such as interfacing between two different voltage systems, backup battery systems and so on.
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
Features
•
•
•
•
•
Outputs have 47-Ω (typ.) resistors connected in series.
High speed: tpd
=
4.5 ns (typ.) at V
CC
=
5 V
TTL-level inputs: V
IL
=
0.8 V (max)
V
IH
=
2.0 V (max)
Power-down protection is provided on all inputs.
Low noise: V
OLP
=
0.35 V (typ)
Start of commercial production
2006-10
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2014-03-01
TC7MP85410FT
Pin Assignment
TC7MP85410FT
N.C
A1
A2
A3
A4
A5
A6
A7
A8
1
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
11
(top view)
V
CC
N.C
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
GND 10
Truth Table
Inputs
An
L
H
Outputs
Yn
L
H
Circuit Schematic
(1/8 Package)
Rout
A1 - A8
Y1 - Y8
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2014-03-01
TC7MP85410FT
Absolute Maximum Ratings
(Note 1)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5
to 7.0
−0.5
to 7.0
−0.5
to 7.0
−0.5
to V
CC
+
0.5
−20
±20
±25
±75
180
−65
to 150
(Note 4)
(Note 2)
(Note 3)
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, may lead to deterioration in IC performance
or even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: V
CC
=
0 V
Note 3: High or Low stats. I
OUT
absolute maximum rating must be observed.
Note 4: V
OUT
<
GND, V
OUT
>
V
CC
Operating Ranges
(Note 1)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
Rating
4.5 to 5.5
0 to 5.5
0 to 5.5
0 to V
CC
−40
to 85
0 to 20
(Note 2)
(Note 3)
Unit
V
V
V
V
°C
ns/V
Note 1: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either V
CC
or GND.
Note 2: V
CC
=
0 V
Note 3: High or low state
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TC7MP85410FT
Electrical Characteristics
DC Characteristics
Characteristics
High level
Low level
High level
Output
voltage
Low level
Input leakage current
Quiescent supply
current
Output leakage
current
V
OL
I
IN
I
CCL
I
CCT
I
OPD
Symbol
V
IH
V
IL
V
OH
V
IN
=
V
IH
or V
IL
V
IN
=
V
IH
or V
IL
V
IN
=
GND
V
IN
=
GND
Per input: V
IN
=
3.4 V
Other input: GND
V
OUT
=
5.5 V
Test Condition
V
CC
(V)
Input
voltage
⎯
⎯
I
OH
= −50 μA
I
OH
= −4
mA
I
OL
=
50
μA
I
OL
=
4 mA
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
0 to 5.5
5.5
5.5
0
Min
2.0
⎯
4.4
3.94
⎯
⎯
⎯
⎯
⎯
⎯
Ta
=
25°C
Typ.
⎯
⎯
4.5
⎯
0.0
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.8
⎯
⎯
0.1
0.36
0.1
4.0
1.35
0.5
Ta
=
−40
to 85°C
Min
2.0
⎯
4.4
3.8
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
0.8
⎯
⎯
0.1
0.44
1.0
40.0
1.5
5.0
μA
μA
mA
μA
V
V
Unit
AC Characteristics
(input: t
r
=
t
f
=
3 ns)
Characteristics
Symbol
t
pLH
t
pHL
t
osLH
t
osHL
C
PD
Test Condition
V
CC
(V)
Propagation delay
time
Output to output skew
Power dissipation
capacitance
⎯
5.0
±
0.5
C
L
(pF)
15
50
50
(Note 2)
Min
⎯
⎯
⎯
⎯
Ta
=
25°C
Typ.
4.5
6.5
⎯
19
Max
6.0
8.5
1.0
⎯
Ta
=
−40
to 85°C
Min
1.0
1.0
⎯
⎯
Max
7.0
10.0
1.0
⎯
ns
Unit
(Note 1)
5.0
±
0.5
ns
pF
Note 1: Parameter guaranteed by design.
t
osLH
=
|t
pLHm
−
t
pLHn
|, t
osHL
=
|t
pHLm
−
t
pHLn
|
Note 2: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr)
=
C
PD
·V
CC
·f
IN
+
I
CC
/8 (per bit)
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2014-03-01
TC7MP85410FT
Noise Characteristics
(input: t
r
=
t
f
=
3 ns)
Characteristics
Quiet output maximum dynamic V
OL
Quiet output minimum dynamic V
OL
Minimum high level dynamic input
voltage
Maximum low level dynamic input
voltage
Symbol
V
OLP
V
OLV
V
IHD
V
ILD
C
L
=
50 pF
C
L
=
50 pF
C
L
=
50 pF
C
L
=
50 pF
Test Condition
V
CC
(V)
5.0
5.0
5.0
5.0
Ta
=
25°C
Typ.
0.35
−0.35
⎯
⎯
Limit
⎯
⎯
2.0
0.8
Unit
V
V
V
V
5
2014-03-01
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