A product Line of
Diodes Incorporated
PI3PCIE3212
3.3V, PCI Express® 3.0, 1-Lane, 2-Channel, 8Gbps, 2:1 Mux/DeMux Switch w/ Single Enable
Features
ÎÎ
Differential Channel, 2:1 Mux/DeMux
2
ÎÎ
PCI Express
®
3.0 performance, 8.0Gbps
ÎÎ
Bi-directional operation
ÎÎ
3dB Bandwidth: 8.1GHz
ÎÎ
Low Bit-to-Bit Skew, 10ps max
ÎÎ
Low channel-to-channel skew: 20ps max
ÎÎ
Low insertion loss: -1.7dB @4GHz (8.0Gbps)
ÎÎ
Low return loss: -13.5dB @4GHz (8.0Gbps)
ÎÎ
Low Crosstalk: -32dB@4GHz (8.0Gbps)
ÎÎ
Low Off Isolation: -21dB@4GHz (8.0Gbps)
ÎÎ
Supply Voltage: 3.3V ± 10%
ÎÎ
Industrial Temperature Range: -40
o
C to 85
o
C
ÎÎ
Low Current: 0.2mA typ.
ÎÎ
Packaging (Pb-free & Green):
Description
The PI3PCIE3212 is a PCIe Gen3.0, 8Gbps, 4 to 2 differential,
bi-directional channel multiplexer/demultiplexer switch. Due to
its low bit-to-bit skew, high channel-to-channel noise isolation
and bandwidth, this product is ideal for PCI Express® 3.0 signal
switching at 8.0Gbps.
Applications
Switch a PCI Express 3.0 lane output between two PCI Express
lane inputs. Applications include NBs, PCs, servers, and other
embedded devices. Routing of PCI Express 3.0, DP1.2, USB3.0,
SAS2.0, SATA3.0, XAUI, RXAUI signals with low signal attenu-
ation.
à
– 20-contact TQFN (2.5 × 4.5mm)
à
– 18 contact, X2QFN(XUA18), 2x2mm
Block Diagram
A0+
A0-
A1+
A1-
B0+
B0-
B1+
B1-
C0+
C0-
C1+
C1-
SEL
PD
Truth Table
Function
A to B
A to C
All ports Hi-Z, IC Power Down
SEL
L
H
X
PD
L
L
H
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A product Line of
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PI3PCIE3212
Pin Configuration (Top-side view)
20-contact TQFN
GND
V
DD
18-contact X2QFN
B0+
PD
V
DD
B0-
15
PD
A0+
A0-
GND
V
DD
A1+
A1-
SEL
2
3
4
5
6
7
8
9
1
20
19
18
17
16
B0+
B0-
B1+
B1-
C0+
C0-
C1+
C1-
A0+
A0-
GND
A1+
A1-
1
2
3
4
5
18 17 16
14
13
B
1
+
B
1
-
GND
C0+
C0-
GND
12
11
GND
15
14
13
12
6
7
8
9
10
10
11
V
DD
Pin Description
20-TQFN Pin #
3
4
7
8
19
18
17
16
15
14
13
12
9
2
1, 6, 10
5, 11, 20
18-X2QFN Pin #
1
2
4
5
16
15
14
13
11
10
9
8
6
18
7, 17
3, 12, Center Pad
GND
Pin Name
A0+
A0–
A1+
A1–
B0+
B0−
B1+
B1−
C0+
C0–
C1+
C1–
SEL
PD
V
DD
GND
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I
I
Description
Signal I/O, Channel 0, Port A
Signal I/O, Channel 1, Port A
Signal I/O, Channel 0, Port B
Signal I/O, Channel 1, Port B
Signal I/O, Channel 0, Port C
Signal I/O, Channel 1, Port C
Operation mode Select
(when SEL=0: A→B, when SEL=1: A→C
PD = 1, Power down is enabled. Please see Truth Table.
Pwr 3.3V ±10% Positive Supply Voltage
Pwr Power ground
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SEL
V
DD
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C1+
C1-
02/17/17
A product Line of
Diodes Incorporated
PI3PCIE3212
Maximum Ratings
(Above which useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ....................................................–65°C to +150°C
Supply Voltage to Ground Potential ................................–0.5V to +4.6V
Channel DC Input Voltage ................................................ –0.5V to 1.5V
DC Output Current ....................................................................... 120mA
Power Dissipation ........................................................................... 0.5W
SEL/PD DC Input Voltage ................................................ –0.5V to 4.6V
Junction Temperature ..................................................................... 125°C
Note:
Stresses greater than those listed under MAXIMUM
RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the op-
erational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
Electrical Characteristics
Recommended Operating Conditions
Symbol
V
DD
I
DD
I
DD_PD
V
I/O
-DIF
V
I/O-CM
T
A
Parameter
3.3V Power Supply
Total current from V
DD
3.3V supply
Power down current
Differential Voltage (differential pins)
Common Mode Voltage (differential
pins)
Operating temperature range
0
-40
SEL = OV or V
DD
PD = 1
Conditions
Min.
3.0
Typ.
3.3
0.2
20
Max.
3.6
1
40
1.6
0.8
85
Units
V
mA
µA
V
ppd
V
o
C
DC Electrical Characteristics for Switching over Operating Range
Parameters
VIH - SEL, PD
VIL - SEL, PD
VIK
IIH
IIL
IIH
IIL
IOZH
IOZL
Description
Input HIGH Voltage, SEL, PD Input
Input LOW Voltage, SEL, PD Input
Clamp Diode Voltage
Input HIGH Current, SEL, PD
Input LOW Current, SEL, PD
Input HIGH Current, A
X
, B
X
, C
X
Input LOW Current, A
X
, B
X
, C
X
HighZ HIGH Current, B
X
, C
X
HighZ LOW Current, B
X
, C
X
Test Conditions
(1)
Min.
2
0
Typ.
(1)
Max.
3.6
0.8
Units
V
V
DD
= Max., I
IN
= –18mA
V
DD
= Max., V
IN
= V
DD
V
DD
= Max., V
IN
= 0V
V
DD
= Max., V
IN
= 1.5V
V
DD
= Max., V
IN
= 0V
V
DD
= Max., V
IN
= 1.5V
V
DD
= Max., V
IN
= 0V
–10
–10
–10
–10
–0.7
–1.2
±5
±5
+10
+10
+10
+10
µA
µA
µA
µA
Note:
1. Typical values are at V
DD
= 3.3V, T
A
= 25°C ambient and maximum loading.
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A product Line of
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PI3PCIE3212
Switching Characteristics
Parameters Description
tPZH, tPZL
tPHZ , tPLZ
t
PLH
t
PHL
tb-b
tch-ch
Line Enable Time - SEL to AN, BN, CN
Line Disable Time - SEL to AN, BN, CN
Propagation Delay, LOW to HIGH
Propagation Delay, HIGH to LOW
Bit-to-bit skew within the same differential pair
Channel-to-channel skew
17
21
5
Test Conditions
Min.
Typ.
25
5
Max.
30
25
36
39
10
20
Units
ns
ps
ps
ps
ps
Dynamic Electrical Characteristics
Parameter
Description
Test Conditions
f = 100MHz
DDIL
2, 3
Differential Insertion Loss
(V
IN
= -10dBm, DC = 0V)
f = 100MHz-1.25GHz
f = 1.25GHz-2.5GHz
f = 2.5GHz-4GHz
f = 5GHz
f = 100MHz
DDIL
OFF2, 3
Differential Off Isolation
f = 100MHz-1.25GHz
f = 1.25GHz-2.5GHz
f = 2.5GHz-4GHz
f = 100MHz
DDRL
2
Differential Return Loss
f = 100MHz-1.25GHz
f = 1.25GHz-2.5GHz
f = 2.5GHz-4GHz
f = 100MHz
DDNEXT
2, 3
Near End Crosstalk
f = 100MHz-1.25GHz
f = 1.25GHz-2.5GHz
f = 2.5GHz-4GHz
BW
-3dB Bandwidth
Min.
Typ.
1
-0.4
-0.6
-1.0
-1.7
-2.1
-59
-37
-27
-21
-27
-23.3
-23.3
-13.5
-57
-38
-33
-32
8.1
Max.
Units
dB
dB
dB
dB
GHz
Notes:
1. Guaranteed by design. Typical values are at V
DD
= 3.3V ,
T
A
= 25°C ambient and maximum loading.
2. S parameters are measured with our evaluation board made with Rogers (R04350) material. Trace width is 30 mil, length 540 mil, trace
impedance is 50 Ohm (+/-5%) and total insertion loss of the trace is 0.5dB@4GHz.
3. Measurement done with fixture deembedding.
All trademarks are property of their respective owners.
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02/17/17
A product Line of
Diodes Incorporated
PI3PCIE3212
+
–
+
–
50
50
+
BALANCED
PORT1
–
+
BALANCED
– PORT2
BALANCED
PORT1
+
–
DUT
Diff. Insertion Loss and Return Test Circuit
BALANCED
PORT2
DUT
Diff. Off Isolation Test Circuit
BALANCED
PORT1
BALANCED
PORT2
+
–
+
–
+ 50
– 50
+ 50
– 50
DUT
Diff. Near End Xtalk Test Circuit
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02/17/17
PCB Design
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