BG3130...
DUAL N-Channel MOSFET Tetrode
•
Two gain controlled input stage for UHF
and VHF -tuners e.g. (NTSC, PAL)
•
Two AGC amplifiers in one single package
•
Integrated gate protection diodes
•
High AGC-range, low noise figure, high gain
•
Improved cross modulation at gain reduction
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
4
5
6
1
2
3
BG3130
BG3130R
Drain
$
#
"
*
)
!
AGC
RF
Input RG1
VGG
G2
G1
RF Output
+ DC
GND
ESD
(Electrostatic
discharge)
sensitive device, observe handling precaution!
Type
BG3130
BG3130R
Package
SOT363
SOT363
1=G1* 2=G2
1=G1* 2=S
Pin Configuration
3=D*
3=D*
4=D**
4=D**
5=S
5=G2
Marking
6=G1** KAs
6=G1** KHs
* For amp. A; ** for amp. B
180° rotated tape loading orientation available
1
2007-06-01
BG3130...
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
Thermal Resistance
Parameter
Channel - soldering point
1)
1
For
Symbol
V
DS
I
D
±I
G1/2SM
±V
G1/G2S
P
tot
T
stg
T
ch
Symbol
R
thchs
Value
8
25
1
6
200
-55 ... 150
150
Unit
V
mA
V
mW
°C
Value
≤
280
Unit
K/W
calculation of
R
thJA please refer to Application Note Thermal Resistance
2
2007-06-01
BG3130...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
Drain-source breakdown voltage
I
D
= 10 µA,
V
G1S
= 0 V,
V
G2S
= 0 V
Gate1-source breakdown voltage
+I
G1S
= 10 mA,
V
G2S
= 0 V,
V
DS
= 0 V
Gate2-source breakdown voltage
+I
G2S
= 10 mA,
V
G1S
= 0 V,
V
DS
= 0 V
Gate1-source leakage current
V
G1S
= 6 V,
V
G2S
= 0 V
Gate2-source leakage current
V
G2S
= 8 V,
V
G1S
= 0 V,
V
DS
= 0 V
Drain current
V
DS
= 5 V,
V
G1S
= 0 V,
V
G2S
= 4.5 V
Drain-source current
V
DS
= 5 V,
V
G2S
= 4 V,
R
G1
= 120 kΩ
Gate1-source pinch-off voltage
V
DS
= 5 V,
V
G2S
= 4 V,
I
D
= 20 µA
Gate2-source pinch-off voltage
V
DS
= 5 V,
I
D
= 20 µA
V
G2S(p)
-
0.6
-
V
G1S(p)
-
0.7
-
V
I
DSX
-
10
-
mA
I
DSS
-
-
10
µA
+I
G2SS
-
-
50
nA
+I
G1SS
-
-
50
µA
+V
(BR)G2SS
6
-
15
+V
(BR)G1SS
6
-
15
V
(BR)DS
12
-
-
V
typ.
max.
Unit
3
2007-06-01
BG3130...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
Forward transconductance
Gate1 input capacitance
f
= 10 MHz
Output capacitance
f
= 10 MHz
Power gain
f
= 800 MHz
f
= 45 MHz
Noise figure
f
= 800 MHz
f
= 45 MHz
Gain control range
V
G2S
= 4 ... 0 V,
f
= 800 MHz
Cross-modulation
k=1%, f
w
=50MHz,
f
unw
=60MHz
X
mod
AGC
= 0 dB
AGC
= 10 dB
AGC
= 40 dB
-
90
-
96
-
87
100
-
-
-
∆G
p
F
-
-
45
1.3
1.7
-
-
-
-
G
p
-
-
24
31
-
-
dB
dB
C
dss
-
1.1
-
g
fs
C
g1ss
-
-
typ.
33
1.9
max.
-
-
mS
pF
Unit
AC Characteristics
V
DS
= 5V,
V
G2S
= 4V, (I
D
= 14 mA) (verified by random sampling)
4
2007-06-01
BG3130...
Total power dissipation
P
tot
=
ƒ(T
S
)
amp. A = amp. B
Drain current
I
D
=
ƒ(I
G1
)
V
G2S
= 4V
amp. A = amp. B
300
30
mW
mA
P
tot
200
20
150
I
D
15
100
10
50
5
0
0
120
°C
0
0
20
40
60
80
100
150
10
20
30
40
50
60
70
80
µA
100
T
S
I
G1
Output characteristics I
D
=
ƒ(V
DS
)
amp. A = amp. B
Gate 1 current
I
G1
=
ƒ(V
G1S
)
V
DS
= 5V,
V
G2S
= Parameter
amp. A = amp. B
225
1.3V
µA
4V
22
mA
18
1.2V
175
16
V
G1S
3.5V
150
125
3V
I
D
14
12
10
8
6
4
2
0
0
2
4
6
8
10
V
1.1V
1V
100
75
50
2V
2.5V
0.8V
25
0
0
14
0.4
0.8
1.2
1.6
2
2.4
V
3.2
V
DS
I
G1
5
2007-06-01
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