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ZXMN2A04DN8TC

Description
MOSFET Dl 20V N Chnl UMOS
Categorysemiconductor    Discrete semiconductor   
File Size172KB,7 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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ZXMN2A04DN8TC Overview

MOSFET Dl 20V N Chnl UMOS

ZXMN2A04DN8TC Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerDiodes
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Number of Channels2 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current7.7 A
Rds On - Drain-Source Resistance35 mOhms
Vgs - Gate-Source Voltage12 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationDual Dual Drain
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time14.8 ns
Pd - Power Dissipation1.25 W
ProductMOSFET Small Signal
Rise Time14.8 ns
Factory Pack Quantity2500
Transistor Type2 N-Channel
TypeMOSFET
Typical Turn-Off Delay Time50.5 ns
Typical Turn-On Delay Time7.9 ns
Unit Weight0.002610 oz
ZXMN2A04DN8
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 20V; R
DS(ON)
= 0.025
DESCRIPTION
; I
D
= 7.7A
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
SO8
APPLICATIONS
DC - DC converters
Power management functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXMN2A04DN8TA
ZXMN2A04DN8TC
REEL
7
’‘
13’‘
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
500 units
2500 units
PINOUT
DEVICE MARKING
ZXMN
2A04D
Top view
ISSUE 1 - JULY 2004
1
SEMICONDUCTORS
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