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FM24CL64B-GA

Description
Real Time Clock Integrated RTC/TCXO/Crystal
Categorystorage    storage   
File Size461KB,18 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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FM24CL64B-GA Overview

Real Time Clock Integrated RTC/TCXO/Crystal

FM24CL64B-GA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCypress Semiconductor
Parts packaging codeSOIC
package instructionSOP, SOP8,.25
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Samacsys Description64Kbit 8Kx8 I2C Automotive F-RAM SOIC8 FM24CL64B-GA Serial-I2C FRAM Memory, 64kbit, 3 → 3.6 V 8-Pin SOIC
JESD-30 codeR-PDSO-G8
JESD-609 codee3
length4.9 mm
memory density65536 bit
Memory IC TypeMEMORY CIRCUIT
memory width8
Mixed memory typesN/A
Humidity sensitivity level3
Number of functions1
Number of terminals8
word count8192 words
character code8000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
organize8KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
power supply3.3 V
Certification statusNot Qualified
Filter levelAEC-Q100
Maximum seat height1.727 mm
Maximum standby current0.00002 A
Maximum slew rate0.00034 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelAUTOMOTIVE
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width3.9 mm
Base Number Matches1
FM24CL64B
64-Kbit (8 K × 8) Serial (I
2
C) Automotive
F-RAM
64-Kbit (8 K × 8) Serial (I
2
C) Automotive F-RAM
Features
Functional Description
The FM24CL64B is a 64-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 121 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM, the FM24CL64B performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. Also, F-RAM exhibits much lower power during writes
than EEPROM since write operations do not require an internally
elevated power supply voltage for write circuits. The
FM24CL64B is capable of supporting 10
13
read/write cycles, or
10 million times more write cycles than EEPROM.
These capabilities make the FM24CL64B ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The FM24CL64B provides substantial benefits to users of serial
(I
2
C) EEPROM as a hardware drop-in replacement. The device
specifications are guaranteed over an automotive-e temperature
range of –40
C
to +125
C.
For a complete list of related resources,
click here.
64-Kbit ferroelectric random access memory (F-RAM) logically
organized as 8 K × 8
13
High-endurance 10 trillion (10 ) read/writes
121-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I
2
C)
Up to 1-MHz frequency
2
Direct hardware replacement for serial (I C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
120
A
(typ) active current at 100 kHz
6
A
(typ) standby current
Voltage operation: V
DD
= 3.0 V to 3.6 V
Automotive-E temperature: –40
C
to +125
C
8-pin small outline integrated circuit (SOIC) package
AEC Q100 Grade 1 compliant
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
Counter
Address
Latch
13
8Kx8
F-RAM Array
8
SDA
Serial to Parallel
Converter
Data Latch
8
SCL
WP
A2-A0
Control Logic
Cypress Semiconductor Corporation
Document Number: 001-84457 Rev. *F
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 14, 2015
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