DMG20102
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For general amplification
Features
High forward current transfer ratio h
FE
with excellent linearity
Low collector-emitter saturation voltage V
CE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: CY
Basic Part Number
DSC2002 + DSA2002 (Common emitter)
Packaging
DMG201020R Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Tr1
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Tr2
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Total power dissipation
Overall
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
opr
T
stg
Rating
60
50
5
500
1
–60
–50
–5
–500
–1
300
150
–40 to +85
–55 to +150
Unit
V
V
V
mA
A
V
V
V
mA
A
mW
°C
°C
°C
1: Base (Tr1)
2: Emitter (Common)
3: Base (Tr2)
Panasonic
JEITA
Code
(C1)
5
4: Collector (Tr2)
5: Collector (Tr1)
Mini5-G3-B
SC-74A
MO-178
(C2)
4
Tr1
Tr2
1
(B1)
2
(E)
3
(B2)
Publication date: January 2014
Ver. DED
1
DMG20102
Electrical Characteristics
T
a
= 25°C±3°C
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
I
E
= 10 µA, I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 10 V, I
C
= 150 mA
V
CE
= 10 V, I
C
= 500 mA
I
C
= 300 mA, I
B
= 30 mA
V
CE
= 10 V, I
C
= 50 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
120
40
0.1
160
4.8
15
0.6
Min
60
50
5
0.1
340
Typ
Max
Unit
V
V
V
µA
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Tr2
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
I
E
= –10 µA, I
C
= 0
V
CB
= –20 V, I
E
= 0
V
CE
= –10 V, I
C
= –150 mA
V
CE
= –10 V, I
C
= –500 mA
I
C
= –300 mA, I
B
= –30 mA
I
C
= –300 mA, I
B
= –30 mA
V
CE
= –10 V, I
C
= –50 mA
V
CB
= –10 V, I
E
= 0, f = 1 MHz
120
40
– 0.2
– 0.9
130
7.3
15
– 0.6
–1.5
Min
–60
–50
–5
– 0.1
340
Typ
Max
Unit
V
V
V
µA
V
V
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
400
DMG20102_PT-Ta
Total power dissipation P
T
(mW)
300
200
100
0
0
40
80
120
160
200
Ambient temperature T
a
(
°C
)
Ver. DED
2
DMG20102
Characteristics charts of Tr1
DMG20102(Tr1)_IC-VCE
I
C
V
CE
600
T
a
=
25°C
500
350
I
B
=
3.0 mA
DMG20102(Tr1)_hFE-IC
DMG20102(Tr1)_VCEsat-IC
h
FE
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
V
CE
=
10 V
T
a
=
85°C
25°C
200
−40°C
150
100
50
0
V
CE(sat)
I
C
I
C
/ I
B
= 10
Collector current I
C
(mA)
2.4 mA
400
300
200
100
0
2.1 mA
1.8 mA
1.5 mA
1.2 mA
0.9 mA
0.6 mA
0.3 mA
0
2
4
6
8
10
12
Forward current transfer ratio h
FE
2.7 mA
300
250
1
10
−1
T
a
=
85°C
−40°C
25°C
1
10
10
2
10
3
1
10
10
2
10
3
10
−2
Collector-emitter voltage V
CE
(V)
DMG20102(Tr1)_IC-VBE
Collector current I
C
(mA)
DMG20102(Tr1)_Cob-VCB
Collector current I
C
(mA)
DMG20102(Tr1)_fT-IC
I
C
V
BE
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
500
V
CE
=
10 V
20
C
ob
V
CB
I
E
= 0
f = 1 MHz
T
a
= 25°C
250
V
CE
= 10 V
T
a
=
25°C
f
T
I
C
Collector current I
C
(mA)
16
Transition frequency f
T
(MHz)
400
T
a
=
85°C
300
25°C
200
12
150
200
−40°C
8
100
100
4
50
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
10
10
2
0
10
−1
1
10
10
2
Base-emitter voltage V
BE
(V)
Collector-base voltage V
CB
(V)
Collector current I
C
(mA)
Characteristics charts of Tr2
DMG20102(Tr2)_IC-VCE
I
C
V
CE
−120
T
a
=
25°C
−100
300
DMG20102(Tr2)_hFE-IC
DMG20102(Tr2)_VCEsat-IC
h
FE
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
V
CE
=
−10
V
V
CE(sat)
I
C
I
C
/ I
B
= 10
Forward current transfer ratio h
FE
250
200
Collector current I
C
(mA)
T
a
=
85°C
−80
−60
−40
−20
0
I
B
= −500 µA
−400 µA
−300 µA
−200 µA
−100 µA
−1
25°C
150
100
50
0
−1
−40°C
−10
−1
T
a
=
85°C
−40°C
25°C
−10
−10
2
−10
3
0
−2
−4
−6
−8
−10
−12
−10
−10
2
−10
3
−10
−2
−1
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
Ver. DED
3
DMG20102
DMG20102(Tr2)_IC-VBE
DMG20102(Tr2)_Cob-VCB
DMG20102(Tr2)_fT-IC
I
C
V
BE
V
CE
= −10
V
25°C
T
a
=
85°C
C
ob
V
CB
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
25
I
E
= 0
f =1 MHz
T
a
= 25°C
250
f
T
I
C
V
CE
=
−10
V
T
a
=
25°C
−600
−500
Collector current I
C
(mA)
20
Transition frequency f
T
(MHz)
200
−400
−300
−40°C
−200
−100
0
15
150
10
100
5
50
0
−
0.4
−
0.8
−1.2
0
−1
−10
−10
2
0
−10
−1
−1
−10
−10
2
Base-emitter voltage V
BE
(V)
Collector-base voltage V
CB
(V)
Collector current I
C
(mA)
Ver. DED
4
DMG20102
Mini5-G3-B
Unit: mm
Land Pattern (Reference) (Unit: mm)
Ver. DED
5
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