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DF2B12M2SCTPL3

Description
ESD Suppressors / TVS Diodes ESD Bi-Directional Protection Diode
CategoryCircuit protection   
File Size251KB,9 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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ESD Suppressors / TVS Diodes ESD Bi-Directional Protection Diode

DF2B12M2SCTPL3 Parametric

Parameter NameAttribute value
Product CategoryESD Suppressors / TVS Diodes
ManufacturerToshiba Semiconductor
RoHSDetails
Vesd - Voltage ESD Contact8 kV
PolarityBidirectional
Number of Channels1 Channel
Termination StyleSMD/SMT
Breakdown Voltage10 V
Working Voltage8 V
Clamping Voltage18 V
Ipp - Peak Pulse Current1 A
Cd - Diode Capacitance400 pF
Package / CaseSC-2
Maximum Operating Temperature+ 150 C
PackagingReel
Factory Pack Quantity10000
DF2B12M1CT
ESD Protection Diodes
Silicon Epitaxial Planar
DF2B12M1CT
1. Applications
ESD Protection
This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
Note:
2. Packaging and Internal Circuit
1: Pin 1
2: Pin 2
CST2
25
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
Junction temperature
Storage temperature
Symbol
V
ESD
T
j
T
stg
Rating
±8
150
-55 to 150
Unit
kV
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1
2011-09
2015-02-27
Rev.6.0
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