1N3611BKTIN/LEAD datasheet, PDF

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1N3611BKTIN/LEAD: DescriptionRectifier Diode, 1 Element, 1A, 200V V(RRM),; CategoryDiscrete semiconductor diode; File Size402KB，2 Pages; ManufacturerCentral Semiconductor

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1N3611BKTIN/LEAD Overview

Rectifier Diode, 1 Element, 1A, 200V V(RRM),

1N3611BKTIN/LEAD Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknow
ECCN code	EAR99
Configuration	SINGLE
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.1 V
Maximum non-repetitive peak forward current	40 A
Number of components	1
Maximum operating temperature	175 °C
Maximum output current	1 A
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	2 µs
surface mount	NO
Base Number Matches	1

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1N3611

1N3612

1N3957

1N3613

1N3614

w w w. c e n t r a l s e m i . c o m

GLASS PASSIVATED

SILICON RECTIFIERS

1.0 AMP, 200 THRU 1000 VOLT

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 1N3611 thru

1N3614, and 1N3957 are hermetically sealed, glass

passivated, general purpose silicon rectifiers ideal for

commercial, military, automotive and entertainment

applications requiring high reliability and failure free

performance.

MARKING: FULL PART NUMBER

GPR-1A CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

SYMBOL 1N3611 1N3612 1N3613 1N3614 1N3957 UNITS

Peak Repetitive Reverse Voltage

VRRM

200

400

600

800

1000

V

DC Blocking Voltage

RMS Reverse Voltage

Average Forward Current (TA=100°C)

Peak Forward Surge Current, tp=8.3ms

Operating and Storage Junction Temperature

ELECTRICAL

SYMBOL

IR

VF

CJ

trr

VR

VR(RMS)

IO

IFSM

TJ, Tstg

200

140

400

280

600

420

1.0

40

-65 to +175

800

560

1000

700

V

A

°C

CHARACTERISTICS:

(TA=25°C unless otherwise noted)

TEST CONDITIONS

TYP

VR=Rated VRRM

VR=Rated VRRM, TA=150°C

IF=1.0A

VR=4.0V, f=1.0MHz

IF=0.5A, IR=1.0A, Irr=0.25A

25

MAX

5.0

200

1.1

2.0

UNITS

μA

V

pF

μs

R1 (28-February 2013)

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