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IW4069BE

Description
HEX INVERTER High-Voltage Silicon-Gate CMOS
File Size143KB,4 Pages
ManufacturerETC
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IW4069BE Overview

HEX INVERTER High-Voltage Silicon-Gate CMOS

IW4069UB
H
EX
I
NVERTER
High-Voltage Silicon-Gate CMOS
The IW4069UB types consist of six inverter circuits. These
devices are intended for all general-purpose inverter applications
where the medium-power TTL-drive and logic-level-conversion
capabilities of circuits such as the IW4049UB Hex Inverter/Buffers
are not required. Each of the six inverters is a single stage
Operating Voltage Range: 3.0 to 18 V
Maximum input current of 1
µA
at 18 V over full package-
temperature range; 100 nA at 18 V and 25°C
Noise margin (over full package temperature range):
0.5 V min @ 5.0 V supply
1.0 V min @ 10.0 V supply
1.0 V min @ 15.0 V supply
ORDERING INFORMATION
IW4069UBN Plastic
IW4069UBD SOIC
T
A
= -55° to 125° C for all
packages
LOGIC DIAGRAM
PIN ASSIGNMENT
PIN 14 =V
CC
PIN 7 = GND
FUNCTION TABLE
Inputs
Output
A
Y
L
H
H
L
1

IW4069BE Related Products

IW4069BE IW4069UBN IW4069UBD
Description HEX INVERTER High-Voltage Silicon-Gate CMOS HEX INVERTER High-Voltage Silicon-Gate CMOS HEX INVERTER High-Voltage Silicon-Gate CMOS

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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