HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Obsolete:
IXFM11N80
IXFM13N80
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
£
I
DM
, di/dt
£
100 A/ms, V
DD
£
V
DSS
,
T
J
£
150°C, R
G
= 2
W
T
C
= 25°C
V
DSS
IXFH/IXFM 11 N80
IXFH/IXFM 13 N80
I
D25
R
DS(on)
0.95
W
0.80
W
800 V 11 A
800 V 13 A
t
rr
£
250 ns
Maximum Ratings
800
800
±20
±30
11N80
13N80
11N80
13N80
11N80
13N80
11
13
44
52
11
13
30
5
.
TO-247 AD (IXFH)
V
V
V
V
A
A
A
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
G = Gate,
S = Source,
D
(TAB)
TO-204 AA (IXFM)
Package
unavailable
G
300
-55 ... +150
150
-55 ... +150
300
D = Drain,
TAB = Drain
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Features
• International standard packages
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
91528F(7/97)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
800
2.0
4.5
±100
T
J
= 25°C
T
J
= 125°C
250
1
0.95
0.80
V
V
nA
mA
mA
W
W
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= 0.8 • V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
11N80
13N80
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
1-4
IXFH 11N80
IXFM 11N80
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
8
14
4200
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
360
100
20
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2
W
(External)
33
63
32
128
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
30
55
50
50
100
50
155
45
80
0.42
0.25
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
K/W
K/W
IXFH 13N80
IXFM 13N80
TO-247 AD (IXFH) Outline
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCK
V
DS
= 10 V; I
D
= 0.5 • I
D25
, pulse test
Dim. Millimeter
Min. Max.
A
B
C
D
E
F
G
H
19.81 20.32
20.80 21.46
15.75 16.26
3.55 3.65
4.32 5.49
5.4
6.2
1.65 2.13
-
4.5
1.0
1.4
10.8 11.0
4.7
0.4
5.3
0.8
Inches
Min. Max.
0.780 0.800
0.819 0.845
0.610 0.640
0.140 0.144
0.170 0.216
0.212 0.244
0.065 0.084
-
0.177
0.040 0.055
0.426 0.433
0.185 0.209
0.016 0.031
0.087 0.102
Source-Drain Diode
Symbol
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
Test Conditions
V
GS
= 0 V
Repetitive;
pulse width limited by T
JM
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
11N80
13N80
11N80
13N80
11
13
44
52
1.5
250
400
1
8.5
A
A
A
A
V
ns
ns
mC
A
.
J
K
L
M
N
1.5 2.49
TO-204 AA (IXFM) Outline
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
£
300
ms,
duty cycle d
£
2 %
I
F
= I
S
-di/dt = 100 A/ms,
V
R
= 100 V
T
J
= 25°C
T
J
= 125°C
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
Millimeter
Min. Max.
38.61 39.12
19.43 19.94
6.40 9.14
0.97 1.09
1.53 2.92
30.15 BSC
10.67 11.17
5.21 5.71
16.64 17.14
11.18 12.19
3.84 4.19
25.16 25.90
Inches
Min. Max.
1.520 1.540
- 0.785
0.252 0.360
0.038 0.043
0.060 0.115
1.187 BSC
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.020
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-4
IXFH 11N80
IXFM 11N80
Fig. 1 Output Characteristics
18
16
14
T
J
= 25°C
IXFH 13N80
IXFM 13N80
Fig. 2 Input Admittance
18
16
T
J
= 25°C
V
DS
= 10V
V
GS
= 10V
8V
14
I
D
- Amperes
10
8
6
4
2
0
0
2
4
6
8
10
12
7V
I
D
- Amperes
12
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Volts
V
GS
- Volts
Fig. 3 R
DS(on)
vs. Drain Current
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0
2
4
6
8 10 12 14 16 18 20 22 24 26
V
GS
= 10V
T
J
= 25°C
Fig. 4 Temperature Dependence
of Drain to Source Resistance
2.50
2.25
R
DS(on)
- Normalized
2.00
1.75
1.50
1.25
1.00
0.75
0.50
-50
-25
0
25
50
75
100
125
150
I
D
= 6.5A
R
DS(on)
- Ohms
V
GS
= 15V
.
I
D
- Amperes
T
J
- Degrees C
Fig. 5 Drain Current vs.
Case Temperature
18
16
14
13N80
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
V
GS(th)
BV
DSS
1.1
BV/V
G(th)
- Normalized
I
D
- Amperes
12
10
8
6
4
2
0
-50
-25
0
25
50
75
100
125
150
11N80
1.0
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees C
T
J
- Degrees C
© 2000 IXYS All rights reserved
3-4
IXFH 11N80
IXFM 11N80
Fig.7 Gate Charge Characteristic Curve
10
IXFH 13N80
IXFM 13N80
Fig.8 Forward Bias Safe Operating Area
10µs
8
6
4
2
0
0
25
50
75
100
125
150
I
D
- Amperes
V
DS
= 400V
I
D
= 13A
I
G
= 10mA
Limited by R
DS(on)
100µs
10
1ms
10ms
100ms
V
GE
- Volts
1
0.1
1
10
100
1000
Gate Charge - nCoulombs
V
DS
- Volts
Fig.9 Capacitance Curves
4500
4000
C
iss
Fig.10 Source Current vs. Source
to Drain Voltage
18
16
14
Capacitance - pF
3500
f = 1 MHz
V
DS
= 25V
2500
2000
I
D
- Amperes
.
3000
12
10
8
6
4
2
T
J
= 125°C
T
J
= 25°C
1500
1000
500
0
0
5
10
15
20
25
C
oss
C
rss
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
CE
- Volts
V
SD
- Volts
Fig.11 Transient Thermal Impedance
1
Thermal Response - K/W
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01
D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4-4
Embedded System
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