NTTFS5820NL
Power MOSFET
60 V, 37 A, 11.5 mW
Features
•
•
•
•
Low R
DS(on)
Low Capacitance
Optimized Gate Charge
These Devices are Pb−Free and are RoHS Compliant
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V
(BR)DSS
60 V
R
DS(on)
MAX
11.5 mW @ 10 V
15 mW @ 4.5 V
I
D
MAX
37 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation R
qJA
(Note 1)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain Current
Steady
State
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
t
p
= 10
ms
I
DM
T
J
,
T
stg
I
S
L = 0.1 mH
E
AS
I
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
60
±20
11
7
2.7
1.1
37
24
33
13
149
−55
to
+150
37
48
31
260
A
°C
A
mJ
A
°C
W
1
Unit
V
V
A
G (4)
S (1,2,3)
N−Channel MOSFET
D (5−8)
W
A
1
WDFN8
(m8FL)
CASE 511AB
5820
A
Y
WW
G
S
S
S
G
MARKING DIAGRAM
5820
AYWWG
G
D
D
D
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Ava-
lanche Energy
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
NTTFS5820NLTAG
Package
Shipping
†
WDFN8 1500 / Tape & Reel
(Pb−Free)
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case – Steady
State (Note 1)
Junction−to−Ambient – Steady
State (Note 1)
Symbol
R
qJC
R
qJA
Value
3.8
46.7
Unit
°C/W
NTTFS5820NLTWG WDFN8 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 1
1
Publication Order Number:
NTTFS5820NL/D
NTTFS5820NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
R
G
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
V
GS
= 4.5 V, V
DS
= 48 V,
I
D
= 10 A, R
G
= 2.5
W
V
GS
= 4.5 V, V
DS
= 48 V, I
D
= 10 A
V
GS
= 10 V, V
DS
= 48 V, I
D
= 10 A
V
GS
= 4.5 V, V
DS
= 48 V, I
D
= 10 A
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
10
28
19
22
ns
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 25 V
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1462
150
96
28
15
1
4
8
3
0.62
V
W
nC
nC
pF
I
D
= 8.7 A
I
D
= 7.3 A
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
60
57
1.0
10
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
6.2
10.1
13.0
24.6
2.3
V
mV/°C
11.5
15
mW
V
DS
= 5 V, I
D
= 10 A
S
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 10 A
0.79
0.65
19
13
6
15
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
2. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTTFS5820NL
TYPICAL CHARACTERISTICS
80
70
I
D
, DRAIN CURRENT (A)
60
50
40
30
20
10
0
0
1
2
3
3.4 V
3.2 V
3.0 V
2.8 V
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10 V
80
4.0 V
3.8 V
3.6 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
70
60
50
40
30
20
10
0
1
T
J
= 25°C
T
J
= 125°C
2
3
T
J
=
−55°C
4
5
V
DS
≥
10 V
V
GS
= 5 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.030
0.025
0.020
0.015
0.010
0.005
I
D
= 10 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.016
Figure 2. Transfer Characteristics
T
J
= 25°C
0.014
V
GS
= 4.5 V
0.012
V
GS
= 10 V
0.010
2
4
6
8
10
12
0.008
5
10
15
20
25
30
35
40
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
−50
−25
0
25
50
75
100
125
150
100
I
D
= 10 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
10,000
100,000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1,000
T
J
= 125°C
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTTFS5820NL
TYPICAL CHARACTERISTICS
1800
1600
C, CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
0
C
oss
C
rss
10
20
30
40
50
60
DRAIN−TO−SOURCE VOLTAGE (V)
C
iss
V
GS
= 0 V
T
J
= 25°C
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
8
6
4
Q
gs
2
0
Q
T
Q
gd
V
DS
= 48 V
I
D
= 10 A
T
J
= 25°C
0
5
10
15
20
25
30
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
40
I
S
, SOURCE CURRENT (A)
1000
V
DD
= 48 V
I
D
= 10 A
V
GS
= 4.5 V
100
t, TIME (ns)
t
f
t
d(on)
t
d(off)
30
V
GS
= 0 V
T
J
= 25°C
t
r
10
20
10
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
V
GS
= 10 V
Single Pulse
T
C
= 25°C
100
ms
1 ms
10 ms
1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
V
DS
, DRAISN VOLTAGE (V)
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
50
40
30
20
10
0
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
10
ms
10
dc
0.1
100
25
50
75
100
125
T
J
, STARTING JUNCTION TEMPERATURE (°C)
150
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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4
NTTFS5820NL
TYPICAL CHARACTERISTICS
R
qJA(t)
(°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
100
Duty Cycle = 0.5
10
0.2
0.1
1
0.05
0.02
0.01
0.1
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.01
0.000001
PULSE TIME (sec)
Figure 13. Thermal Response
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