BLF7G21LS-160
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2050 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
1-carrier W-CDMA
[1]
[2]
f
(MHz)
1930 to 1990
1930 to 1990
I
Dq
(mA)
1080
1080
V
DS
(V)
28
28
P
L(AV)
(W)
45
50
G
p
(dB)
18
18
D
(%)
34
36
ACPR
(dBc)
30
[1]
34
[2]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (1800 MHz to 2050 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 1800 MHz to
2050 MHz frequency range
BLF7G21LS-160
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
Pinning
Description
drain
drain
gate
gate
source
[1]
3
4
1
2
5
Simplified outline
Graphic symbol
1
3
5
4
2
aaa-001924
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF7G21LS-160
-
earless flanged LDMOST ceramic package; 4 leads
Version
SOT1121B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
65
+13
+150
200
Unit
V
V
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 100 W
Typ
Unit
0.41 K/W
BLF7G21LS-160#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
2 of 14
BLF7G21LS-160
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 1.8 mA
V
DS
= 10 V; I
D
= 180 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 6.3 A
Min Typ
65
1.5
-
-
-
-
-
-
1.9
-
34
-
13
0.08
Max Unit
-
2.3
2.8
-
280
-
-
V
V
A
A
nA
S
7. Test information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 PDPCH; f
1
= 1932.5 MHz; f
2
= 1937.5 MHz; f
3
= 1982.5 MHz; f
4
= 1987.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 1080 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
G
p
RL
in
D
ACPR
5M
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (5 MHz)
Conditions
P
L(AV)
= 45 W
P
L(AV)
= 45 W
P
L(AV)
= 45 W
P
L(AV)
= 45 W
Min Typ
17.0 18.0
-
31
15
34
30
Max
-
8
-
25
Unit
dB
dB
%
dBc
7.1 Ruggedness in class-AB operation
The BLF7G21LS-160 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 1080 mA; P
L
= 160 W (CW); f = 1805 MHz.
BLF7G21LS-160#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
3 of 14
BLF7G21LS-160
Power LDMOS transistor
7.2 1-Tone CW
22
G
p
(dB)
20
50
aaa-002633
60
η
D
(%)
18
(6)
(5)
(4)
(3)
(2)
(1)
40
16
30
14
20
12
10
10
0
25
50
75
100
125
150 175
P
L
(W)
0
200
V
DS
= 28 V; I
Dq
= 1080 mA.
(1) G
p
at f = 1930 MHz
(2) G
p
at f = 1960 MHz
(3) G
p
at f = 1990 MHz
(4)
D
at f = 1930 MHz
(5)
D
at f = 1960 MHz
(6)
D
at f = 1990 MHz
Fig 1.
Power gain and drain efficiency as function of load power; typical values
BLF7G21LS-160#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
4 of 14
BLF7G21LS-160
Power LDMOS transistor
7.3 1-Carrier W-CDMA
22
G
p
(dB)
20
50
aaa-002634
60
η
D
(%)
-10
ACPR
(dBc)
-20
(3)
(2)
(1)
(6)
(5)
(4)
aaa-002635
18
(6)
(5)
(4)
(3)
(2)
(1)
40
-30
16
30
-40
14
20
-50
12
10
-60
10
0
20
40
60
80
P
L
(W)
0
100
-70
0
20
40
60
80
P
L
(W)
100
V
DS
= 28 V; I
Dq
= 1080 mA.
(1) G
p
at f = 1930 MHz
(2) G
p
at f = 1960 MHz
(3) G
p
at f = 1990 MHz
(4)
D
at f = 1930 MHz
(5)
D
at f = 1960 MHz
(6)
D
at f = 1990 MHz
V
DS
= 28 V; I
Dq
= 1080 mA.
(1) ACPR
5M
at f = 1930 MHz
(2) ACPR
5M
at f = 1960 MHz
(3) ACPR
5M
at f = 1990 MHz
(4) ACPR
10M
at f = 1930 MHz
(5) ACPR
10M
at f = 1960 MHz
(6) ACPR
10M
at f = 1990 MHz
Fig 2.
Power gain and drain efficiency as function of
load power; typical values
Fig 3.
Adjacent channel power ratio (5 MHz) and
Adjacent channel power ratio (10 MHz) as a
function of load power; typical values
aaa-002636
8
PAR
(dB)
6
4
(1)
(2)
(3)
2
0
0
20
40
60
80
P
L
(W)
100
V
DS
= 28 V; I
Dq
= 1080 mA.
(1) f = 1930 MHz
(2) f = 1960 MHz
(3) f = 1990 MHz
Fig 4.
Peak-to-average ratio as a function of load power; typical values
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
BLF7G21LS-160#2
Product data sheet
Rev. 2 — 1 September 2015
5 of 14
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