Continuous Source Current (MOSFET Diode Conduction)
Average Forward Current (Schottky)
Pulsed Forward Current (Schottky)
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
I
DM
I
S
I
F
I
FM
A
Maximum Power Dissipation (MOSFET)
P
D
W
Maximum Power Dissipation (Schottky)
P
D
W
Operating Junction and Storage Temperature Range
Soldering Recommendation (Peak Temperature)
d, e
Document Number: 73696
S09-2111-Rev. D, 12-Oct-09
T
J
, T
stg
°C
www.vishay.com
1
Si5857DU
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
b, f
Maximum Junction-to-Case (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)
b, g
Maximum Junction-to-Case (Drain) (Schottky)
t
≤
5s
t
≤
5s
Symbol
R
thJA
R
thJC
R
thJA
R
thJC
Typical
43
9.5
49
13
Maximum
55
12
61
16
°C/W
Unit
Notes:
a. Package limited.
b. Surface Mounted on FR4 board.
c. t
≤
5 s.
d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with a soldering iron is not
recommended for leadless components.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions for MOSFETS is 105 °C/W.
g. Maximum under Steady State conditions for Schottky is 110 °C/W.
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= - 10 V, R
L
= 2.5
Ω
I
D
≅
- 4 A, V
GEN
= - 10 V, R
g
= 1
Ω
V
DD
= - 10 V, R
L
= 2.5
Ω
I
D
≅
- 4 A, V
GEN
= - 4.5 V, R
g
= 1
Ω
f = 1 MHz
V
DS
= - 10 V, V
GS
= - 10 V, I
D
= - 5 A
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 5 A
V
DS
= - 10 V, V
GS
= 0 V, f = 1 MHz
480
125
90
11
5.5
1.2
1.8
9
11
42
33
50
5
15
25
10
20
65
50
75
10
25
40
20
ns
Ω
17
8.5
nC
pF
V
DS
ΔV
DS/TJ
ΔV
GS(th)/TJ
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= - 250 µA
I
D
= - 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= - 20 V, V
GS
= 0 V
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≤
- 5 V, V
GS
= - 4.5 V
V
GS
= - 4.5 V, I
D
= - 3.6 A
V
GS
= - 2.5 V, I
D
= - 1 A
V
DS
= - 10 V, I
D
= - 3.6 A
- 20
0.048
0.081
10
0.058
0.100
- 0.6
- 20
- 19
2.6
- 1.5
± 100
-1
- 10
V
mV/°C
V
ns
µA
A
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
www.vishay.com
2
Document Number: 73696
S09-2111-Rev. D, 12-Oct-09
Si5857DU
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= - 4 A dI/dt = 100 A/µs TJ = 25 °C
I
S
= - 4 A, V
GS
= 0 V
- 0.9
25
10
9
16
Test Conditions
T
C
= 25 °C
Min.
Typ.
Max.
-6
- 20
- 1.2
50
20
Unit
Drain-Source Body Diode Characteristics
A
V
ns
nC
ns
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V
F
Test Conditions
I
F
= 1 A
I
F
= 1 A, T
J
= 125 °C
V
R
= 20 V
Maximum Reverse Leakage Current
Junction Capacitance
I
rm
C
T
V
R
= 20 V, T
J
= 85 °C
V
R
= 20 V, T
J
= 125 °C
V
R
= 10 V
Min.
Typ.
0.34
0.255
0.05
2
10
90
Max.
0.375
0.290
0.500
20
100
pF
mA
Unit
V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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