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BFP-720-H6327

Description
RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS
Categorysemiconductor    Discrete semiconductor   
File Size1MB,25 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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RF Bipolar Transistors NPN WIDEBAND SILICON GERMANIUM RF TRANS

BFP-720-H6327 Parametric

Parameter NameAttribute value
Product CategoryRF Bipolar Transistors
ManufacturerInfineon
RoHSDetails
Transistor TypeBipolar
TechnologySiGe
Transistor PolarityNPN
DC Collector/Base Gain hfe Min160
Collector- Emitter Voltage VCEO Max4 V
Emitter- Base Voltage VEBO1.2 V
Continuous Collector Current25 mA
ConfigurationSingle Dual Emitter
Mounting StyleSMD/SMT
Package / CaseSOT-343
PackagingCut Tape
PackagingMouseReel
PackagingReel
Operating Frequency45 GHz
Pd - Power Dissipation100 mW
QualificationAEC-Q100
Factory Pack Quantity3000
TypeRF Silicon Germanium
BFP720
Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.1, 2012-10-19
RF & Protection Devices
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