PBSS4032NT
30 V, 2.6 A NPN low V
CEsat
(BISS) transistor
Rev. 01 — 18 December 2009
Product data sheet
1. Product profile
1.1 General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PT.
1.2 Features
Low collector-emitter saturation voltage V
CEsat
Optimized switching time
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
t
p
≤
1 ms
I
C
= 2.5 A;
I
B
= 0.25 A
[1]
Conditions
open base
Min
-
-
-
-
Typ
-
-
-
76
Max
30
2.6
5
105
Unit
V
A
A
mΩ
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
NXP Semiconductors
PBSS4032NT
30 V, 2.6 A NPN low V
CEsat
(BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
2
sym021
Simplified outline
3
Graphic symbol
3
1
3. Ordering information
Table 3.
Ordering information
Package
Name
PBSS4032NT
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
*BM
Type number
PBSS4032NT
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
single pulse;
t
p
≤
1 ms
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
Max
30
30
5
2.6
5
0.5
Unit
V
V
V
A
A
A
PBSS4032NT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 18 December 2009
2 of 14
NXP Semiconductors
PBSS4032NT
30 V, 2.6 A NPN low V
CEsat
(BISS) transistor
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
Parameter
total power dissipation
Conditions
T
amb
≤
25
°C
[1]
[2]
[3]
Min
-
-
-
-
−55
−65
Max
390
660
1100
150
+150
+150
Unit
mW
mW
mW
°C
°C
°C
T
j
T
amb
T
stg
[1]
[2]
[3]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
1.5
P
tot
(W)
1.0
006aab954
(1)
(2)
0.5
(3)
0
−75
−25
25
75
125
175
T
amb
(°C)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
PBSS4032NT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 18 December 2009
3 of 14
NXP Semiconductors
PBSS4032NT
30 V, 2.6 A NPN low V
CEsat
(BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
[1]
[2]
[3]
Min
-
-
-
-
Typ
-
-
-
-
Max
320
190
115
62
Unit
K/W
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
thermal resistance from
junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.33
0.2
0.1
0.05
10
0.02
0.01
0.5
006aab955
1
0
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4032NT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 18 December 2009
4 of 14
NXP Semiconductors
PBSS4032NT
30 V, 2.6 A NPN low V
CEsat
(BISS) transistor
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle = 1
0.75
0.33
0.2
0.1
10
0.02
0.05
0.01
0.5
006aab956
1
0
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3.
10
3
Z
th(j-a)
(K/W)
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab957
duty cycle = 1
10
2
0.75
0.33
0.2
10
0.1
0.05
0.02
1
0
0.01
0.5
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS4032NT_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 18 December 2009
5 of 14
京公网安备 11010802033920号
EEWORLD
