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BCR-142W-E6327

Description
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size833KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BCR-142W-E6327 Overview

Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

BCR-142W-E6327 Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - Pre-Biased
ManufacturerInfineon
RoHSDetails
ConfigurationSingle
Transistor PolarityNPN
Typical Input Resistor22 kOhms
Typical Resistor Ratio0.47
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
DC Collector/Base Gain hfe Min70
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
Peak DC Collector Current100 mA
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
Height0.9 mm
Length2 mm
Minimum Operating Temperature- 65 C
Factory Pack Quantity3000
Width1.25 mm
Unit Weight0.000176 oz
BCR142...
NPN Silicon Digital Transistor
Switching circuit, inverter, interface circuit,
driver circuit
Built in bias resistor (R
1
=22kΩ,
R
2
=47kΩ)
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BCR142
BCR142W
C
3
R
1
R
2
1
B
2
E
EHA07184
Type
BCR142
BCR142W
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input reverse voltage
Collector current
Total power dissipation-
BCR142,
T
S
102°C
BCR142W,
T
S
124°C
Junction temperature
Storage temperature
Marking
WZs
WZs
1=B
1=B
Pin Configuration
2=E
2=E
3=C
3=C
-
-
-
-
-
-
Package
SOT23
SOT323
Symbol
V
CEO
V
CBO
V
i(fwd)
V
i(rev)
I
C
P
tot
Value
50
50
60
10
100
200
250
Unit
V
mA
mW
T
j
T
stg
150
-65 ... 150
°C
1
2011-08-29
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