BSC080P03LSGAUMA1 datasheet, PDF

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BSC080P03LSGAUMA1: DescriptionMOSFET SMALL SIGNAL+P-CH; CategoryDiscrete semiconductor The transistor; File Size548KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BSC080P03LSGAUMA1 Overview

MOSFET SMALL SIGNAL+P-CH

BSC080P03LSGAUMA1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Infineon
package instruction	SMALL OUTLINE, R-PDSO-F5
Contacts	8
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	26 weeks
Is Samacsys	N
Other features	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	248 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	16 A
Maximum drain-source on-resistance	0.008 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F5
JESD-609 code	e3
Humidity sensitivity level	3
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum pulsed drain current (IDM)	120 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BSC080P03LSGAUMA1 Related Products

	BSC080P03LSGAUMA1	BSC080P03LS G
Description	MOSFET SMALL SIGNAL+P-CH	Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 16A Gate-source threshold voltage: 2.2V @ 250uA Drain-source on-resistance: 8mΩ @ 30A, 10V Maximum power dissipation (Ta =25°C): 2.5W Type: P channel N channel, 30V, 16A, 8mΩ@10V

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