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BR93L56RF-WE2

Description
EEPROM 3 WIRE SERIAL
Categorystorage    storage   
File Size1MB,39 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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BR93L56RF-WE2 Overview

EEPROM 3 WIRE SERIAL

BR93L56RF-WE2 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOIC
package instructionLEAD FREE, SOP-8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time11 weeks
Maximum clock frequency (fCLK)2 MHz
Data retention time - minimum40
Durability1000000 Write/Erase Cycles
JESD-30 codeR-PDSO-G8
JESD-609 codee2
length5 mm
memory density2048 bit
Memory IC TypeEEPROM
memory width16
Number of functions1
Number of terminals8
word count128 words
character code128
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128X16
Package body materialPLASTIC/EPOXY
encapsulated codeLSOP
Encapsulate equivalent codeSOP8,.25
Package shapeRECTANGULAR
Package formSMALL OUTLINE, LOW PROFILE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
power supply2/5 V
Certification statusNot Qualified
Maximum seat height1.6 mm
Serial bus typeMICROWIRE
Maximum standby current0.000002 A
Maximum slew rate0.0015 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN COPPER
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature10
width4.4 mm
Maximum write cycle time (tWC)5 ms
write protectSOFTWARE
Base Number Matches1
Datasheet
Serial EEPROM Series Standard EEPROM
Microwire BUS EEPROM(3-Wire)
BR93Lxx-W
●General
Description
BR93Lxx-W is serial EEPROM of serial 3-line interface method
●Features
3-line communications of chip select, serial clock, serial data
input / output (the case where input and output are shared)
Actions available at high speed 2MHz clock(2.5V to 5.5V)
Speed write available (write time 5ms max.)
Same package and pin layout from 1Kbit to 16Kbit
1.8V to 5.5V single power source action
Address auto increment function at read action
Write mistake prevention function
Write prohibition at power on
Write prohibition by command code
Write mistake prevention function at low voltage
Program cycle auto delete and auto end function
Program condition display by READY / BUSY
Low current consumption
At write action (at 5V) : 1.2mA (Typ.)
At read action (at 5V) : 0.3mA (Typ.)
At standby action (at 5V) : 0.1μA (Typ.)(CMOS input)
TTL compatible( input / outputs)
Data retention for 40 years
Endurance up to 1,000,000 times
Data at shipment all addresses FFFFh
●Packages
W(Typ.) x D(Typ.) x H(Max.)
SOP8
5.00mm x 6.20mm x 1.71mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
SOP- J8
4.90mm x 6.00mm x 1.65mm
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
MSOP8
2.90mm x 4.00mm x 0.90mm
DIP-T8
9.30mm x 6.50mm x 7.10mm
●BR93Lxx-W
Package type
Capacity
1Kbit
2Kbit
4Kbit
8Kbit
16Kbit
Bit format
64×16
128×16
256×16
512×16
1K×16
Type
BR93L46-W
BR93L56-W
BR93L66-W
BR93L76-W
BR93L86-W
Power source
voltage
1.8V to 5.5V
1.8V to 5.5V
1.8V to 5.5V
1.8V to 5.5V
1.8V to 5.5V
SOP8
F
RF
Figure.1
SOP-J8 SSOP-B8 TSSOP-B8
FJ RFJ FV RFV FVT RFVT
MSOP8
RFVM
TSSOP-
B8J
RFVJ
DIP-T8
-
○Product
structure:Silicon monolithic integrated circuit
www.rohm.com
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111½14½001
○This
product is not designed protection against radioactive rays
1/35
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