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BSC025N03LS-G

Description
USB Interface IC USB to Serial UART Enhanced IC QFN-32
Categorysemiconductor    Discrete semiconductor   
File Size381KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSC025N03LS-G Overview

USB Interface IC USB to Serial UART Enhanced IC QFN-32

BSC025N03LS-G Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTDSON-8
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current100 A
Rds On - Drain-Source Resistance2.1 mOhms
Vgs th - Gate-Source Threshold Voltage1 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge74 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
PackagingMouseReel
Fall Time6 ns
Forward Transconductance - Min55 S
Height1.27 mm
Length5.9 mm
Pd - Power Dissipation83 W
Rise Time6.2 ns
Factory Pack Quantity5000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time36 ns
Typical Turn-On Delay Time10 ns
Width5.15 mm
BSC025N03LS G
OptiMOS™3
Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel; Logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSC025N03LS G
Package
PG-TDSON-8
Marking
025N03LS
Product Summary
V
DS
R
DS(on),max
I
D
30
2.5
100
PG-TDSON-8
V
mΩ
A
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1)
Value
100
93
100
77
Unit
A
25
400
50
135
6
±20
mJ
kV/µs
V
I
D,pulse
I
AS
E
AS
dv /dt
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=50 A,
R
GS
=25
I
D
=50 A,
V
DS
=24 V,
di /dt =200 A/µs,
T
j,max
=150 °C
J-STD20 and JESD22
Rev. 1.6
page 1
2009-10-22
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