BYV27-50, BYV27-100, BYV27-150, BYV27-200
www.vishay.com
Vishay Semiconductors
Ultra-Fast Avalanche Sinterglass Diode
FEATURES
• Controlled avalanche characteristic
• Low forward voltage
• Ultra fast recovery time
• Glass passivated junction
• Hermetically sealed package
949539
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Very fast rectification diode e.g. for switch mode power
supply
ORDERING INFORMATION
(Example)
DEVICE NAME
BYV27-200
BYV27-200
ORDERING CODE
BYV27-200-TR
BYV27-200-TAP
TAPED UNITS
5000 per 10" tape and reel
5000 per ammopack
MINIMUM ORDER QUANTITY
25 000
25 000
PARTS TABLE
PART
BYV27-50
BYV27-100
BYV27-150
BYV27-200
TYPE DIFFERENTIATION
V
R
= 50 V; I
F(AV)
= 2 A
V
R
= 100 V; I
F(AV)
= 2 A
V
R
= 150 V; I
F(AV)
= 2 A
V
R
= 200 V; I
F(AV)
= 2 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYV27-50
BYV27-100
BYV27-150
BYV27-200
BYV27-50
BYV27-100
BYV27-150
BYV27-200
SYMBOL
V
RSM
V
RSM
V
RSM
V
RSM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
FRM
I
F(AV)
E
R
T
j
= T
stg
VALUE
55
110
165
220
50
100
150
200
50
15
2
20
- 55 to + 175
UNIT
V
V
V
V
V
V
V
V
A
A
A
mJ
°C
Peak reverse voltage, non repetitive
See electrical characteristics
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
Junction and storage temperature range
See electrical characteristics
t
p
= 10 ms, half sine wave
I
(BR)R
= 1 A, T
j
= 175 °C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
Rev. 1.8, 04-Sep-12
Document Number: 86042
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYV27-50, BYV27-100, BYV27-150, BYV27-200
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
TEST CONDITION
I
F
= 3 A
I
F
= 3 A, T
j
= 175 °C
V
R
= V
RRM
Reverse current
Reverse recovery time
V
RSM
V
R
= V
RRM
, T
j
= 165 °C
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
PART
SYMBOL
V
F
V
F
I
R
I
R
I
R
t
rr
MIN.
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
MAX.
1.07
0.88
1
100
150
25
UNIT
V
V
μA
μA
μA
ns
TYPICAL CHARACTERISTICS
(T
amb
= 25
C,
unless otherwise specified)
R
thJA
- Therm.Resist.Junction/Ambient (K/W)
120
2.5
I
FAV
- Average Forward Current (A)
l
100
80
60
40
20
0
0
949526
l
2.0
V
R
= V
RRM
half
sine
wave
R
thJA
= 45 K/W
l = 10 mm
T
L
= constant
1.5
1.0
0.5
R
thJA
= 100 K/W
PCB: d = 25 mm
0.0
0
20
40
60
80
100 120 140 160 180
5
10
15
20
25
30
16383
l - Lead Length (mm)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
100
1000
V
R
= V
RRM
I
F
- Forward Current (A)
T
j
= 175 °C
1
T
j
= 25 °C
I
R
- Reverse Current (A)
10
100
0.1
10
0.01
0.001
0.0
16382
1
0.5
1.0
1.5
2.0
2.5
16384
25
50
75
100
125
150
175
V
F
- Forward Voltage (V)
T
j
- Junction Temperature (°C)
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 4 - Reverse Current vs. Junction Temperature
Rev. 1.8, 04-Sep-12
Document Number: 86042
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYV27-50, BYV27-100, BYV27-150, BYV27-200
www.vishay.com
Vishay Semiconductors
P
R
- Reverse Power Dissipation (mW)
70
V
R
= V
RRM
60
50
40
30
20
10
0
25
50
75
100
125
150
175
P
R
- Limit
at 80 % V
R
P
R
- Limit
at 100 % V
R
100
f = 1 MHz
C
D
- Diode Capacitance (pF)
80
60
40
20
0
0.1
16386
1
10
100
16385
T
j
- Junction Temperature (°C)
V
R
- Reverse Voltage (V)
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Rev. 1.8, 04-Sep-12
Document Number: 86042
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
3.6 (0.142) max.
20543
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 08-Feb-17
1
Document Number: 91000
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