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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK254
RF AMPLIFIER FOR CATV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
• Low V
DD
Use
• Driving Battery
:
(V
DS
= 3.5 V)
NF1 = 2.0 dB TYP. (f = 470 MHz)
NF2 = 0.8 dB TYP. (f = 55 MHz)
• High Power Gain :
G
PS
= 19.0 dB TYP. (f = 470 MHz)
Embossed Type Taping
4 Pins Super Mini Mold
• Suitable for use as RF amplifier in CATV tuner.
2.0±0.2
1.25
PACKAGE DIMENSIONS
(Unit: mm)
2.1±0.2
0.3
+0.1
–0.05
0.3
+0.1
–0.05
3
4
0.15
+0.1
–0.05
0.3
+0.1
–0.05
(1.3)
0.4
+0.1
–0.05
1
0.9±0.1
0.3
• Low Noise Figure :
1.25±0.1
2
• Automatically Mounting :
• Small Package
:
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
Gate1 to Source Voltage
Gate2 to Source Voltage
Gate1 to Drain Voltage
Gate2 to Drain Voltage
Drain Current
Total Power Dissipation
Channel Temperature
Storage Temperature
*1:
R
L
≥
10 kΩ
*2:
Free air
V
DSX
V
G1S
V
G2S
V
G1D
V
G2D
I
D
P
D
T
ch
T
stg
18
±8
*1
±8
*1
18
18
25
130
*2
125
–55 to +125
V
V
V
V
V
mA
mW
°C
°C
0.60
0.65
PIN CONNECTIONS
1.
2.
3.
4.
Source
Drain
Gate2
Gate1
PRECAUTION:
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10033EJ01V0DS (1st edition)
(Previous No. P10585EJ2V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Corporation 1993
NEC Compound Semiconductor Devices 2001
0 to 0.1
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