PTFB212507SH
Thermally-Enhanced High Power RF LDMOS FET
200 W, 28 V, 2110 – 2170 MHz
Description
The PTFB212507SH is a 200-watt LDMOS FET intended for use
in multi-standard cellular power amplifier applications in the 2110
to 2170 MHz frequency band. Features include input and output
matching, high gain and thermally-enhanced package with earless
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTFB212507SH
Package H-37288G-4/2
Single-carrier WCDMA, 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 1.6 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 7.5 dB, BW 3.84 MHz
-15
-20
-25
-30
IMD Low
IMD Up
Efficiency
45
40
Features
•
•
•
Broadband internal matching
Wide video bandwidth
Typical two-carrier WCDMA performance,
2170 MHz, 28 V, 3GPP signal, PAR = 8 dB,
10 MHz carrier spacing
- Average output power = 40 W
- Linear gain = 18 dB
- Efficiency = 27%
- Intermodulation distortion = –35 dBc
- Adjacent channel power= –39 dBc
Typical CW performance, 2170 MHz, 28 V
- Output power at P
1dB
= 200 W
- Efficiency = 52%
- Gain = 17 dB
Capable of handling 10:1 VSWR @28 V, 200 W
(CW) output power
Integrated ESD protection
Low thermal resistance
Pb-free and RoHS compliant
30
25
20
15
10
5
0
-35
-40
-45
-50
-55
-60
34
36
38
40
42
44
46
48
50
52
Drain Efficiency (%)
35
IMD (dBc)
•
•
•
•
•
Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1850 mA, P
OUT
= 50 W avg, ƒ = 2170 MHz. 3GPP signal, 3.84 MHz channel bandwidth,
10 dB peak/average @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
16.75
25
—
Typ
18
27.5
–36.5
Max
19
—
–32
Unit
dB
%
dBc
η
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 13
Rev. 03, 2015-10-30
PTFB212507SH
Typical Performance
(data taken in a production test fixture)
Two-carrier WCDMA 3GPP
V
DD
= 28 V, I
DQ
= 1.6 A, ƒ = 2170 MHz
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
20
19
50
40
30
20
-20
-25
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 1.6 A, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
2110 Lower
2110 Upper
2140 Lower
2140 Upper
2170 Lower
2170 Upper
Gain
Drain Efficiency (%)
-30
Gain (dB)
18
17
IMD (dBc)
-35
-40
-45
-50
-55
34
36
38
40
42
44
46
48
50
52
Efficiency
16
15
34
36
38
40
42
44
46
48
50
52
10
0
Output Power (dBm)
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 1.6 A, ƒ = 2170 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-15
-20
IMD Low
IMD Up
ACPR
Efficiency
45
40
60
Single-carrier WCDMA,
3GPP Broadband
V
DD
= 28 V, I
DQ
= 1.6 A, P
OUT
= 63 W
0
Gain (dB) / Efficiency (%)
RL
50
40
30
-10
IMD & ACPR (dBc)
-30
-35
-40
-45
-50
-55
-60
34
36
38
30
25
20
15
10
5
0
Drain Efficiency (%)
-25
35
Efficiency
-20
-30
IMD
20
-40
Gain
10
2040 2070 2100 2130 2160 2190 2220
-50
40
42
44
46
48
50
52
Output Power (dBm)
Frequency (MHz)
Data Sheet
3 of 13
Rev. 03, 2015-10-30
Return Loss (dB) / IMD (dBc)
Microcontroller MCU
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