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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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SUM09N20-270
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 160 V, V
GS
= 0 V
V
DS
= 160 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 160 V, V
GS
= 0 V, T
J
= 175 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 5 A, T
J
= 125 °C
V
GS
= 10 V, I
D
= 5 A, T
J
= 175 °C
V
GS
= 6 V, I
D
= 5 A
Forward Transconductance
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
c
a
Symbol
Test Conditions
Min.
200
2
Typ.
Max.
Unit
4
± 100
1
50
250
V
nA
µA
A
10
0.216
0.270
0.54
0.71
0.240
15
580
0.300
Ω
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
V
DS
= 15 V, I
D
= 5 A
S
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
75
30
11
17
pF
V
DS
= 100 V, V
GS
= 10 V, I
D
= 10 A
2.7
4
4
10
15
55
40
60
nC
Ω
V
DD
= 100 V, R
L
= 10
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
G
= 2.5
Ω
35
25
40
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
b
9
10
I
F
= 10 A, V
GS
= 0 V
I
F
= 10 A, dI/dt = 100 A/µs
0.9
100
5
0.25
1.5
150
8
0.6
A
V
ns
A
µC
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72158
S11-2308-Rev. B, 21-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUM09N20-270
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C unless noted)
10
V
GS
= 10 thru 6 V
8
I
D
- Drain Current (A)
5V
6
I
D
- Drain Current (A)
8
10
6
4
4
T
C
= 125 °C
2
25 °C
2
4V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
- 55 °C
0
0
1
2
3
4
5
6
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
30
T
C
= - 55 °C
25
g
fs
- Transconductance (S)
25 °C
20
125 °C
R
DS(on)
- On-Resistance ()
0.4
0.5
Transfer Characteristics
0.3
V
GS
= 6 V
0.2
V
GS
= 10 V
0.1
15
10
5
0
0
2
4
6
I
D
- Drain Current (A)
8
10
0.0
0
2
4
6
8
10
I
D
- Drain Current (A)
Transconductance
800
700
600
500
400
300
200
100
0
0
40
80
120
160
200
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
20
On-Resistance vs. Drain Current
V
GS
- Gate-to-Source Voltage (V)
16
V
DS
= 100 V
I
D
= 10 A
C - Capacitance (pF)
12
8
4
0
0
4
8
12
16
Q
g
- Total Gate Charge (nC)
20
Capacitance
Gate Charge
Document Number: 72158
S11-2308-Rev. B, 21-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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SUM09N20-270
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C unless noted)
3.0
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10 V
I
D
= 5 A
I
S
- Source Current (A)
100
2.5
2.0
T
J
= 150 °C
10
T
J
= 25 °C
1.5
1.0
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
175
1
0
0.3
0.6
0.9
1.2
1.5
T
J
- Junction Temperature (°C)
V
SD
- Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
240
Source-Drain Diode Forward Voltage
230
I
D
= 1.0 mA
220
V
DS
(V)
210
200
190
180
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
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Document Number: 72158
S11-2308-Rev. B, 21-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com/ppg?72158.
Document Number: 72158
S11-2308-Rev. B, 21-Nov-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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