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BD675

Description
Medium Power NPN Darlington Bipolar Power Transistor, TO-225, 500-BLKBX
CategoryDiscrete semiconductor    The transistor   
File Size73KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BD675 Overview

Medium Power NPN Darlington Bipolar Power Transistor, TO-225, 500-BLKBX

BD675 Parametric

Parameter NameAttribute value
Brand Nameonsemi
Is it lead-free?Contains lead
Objectid1531626280
Parts packaging codeTO-225
package instructionPLASTIC, CASE 77-09, 3 PIN
Contacts3
Manufacturer packaging code77-09
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time4 weeks
Samacsys DescriptionOBSOLETE
Samacsys Manufactureronsemi
Samacsys Modified On2024-02-23 15:48:53
YTEOL0
Maximum collector current (IC)4 A
Collector-emitter maximum voltage45 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)750
JEDEC-95 codeTO-225AA
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
BD675G, BD675AG,
BD677G, BD677AG,
BD679G, BD679AG, BD681G
Plastic Medium-Power
Silicon NPN Darlingtons
This series of plastic, medium−power silicon NPN Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
http://onsemi.com
High DC Current Gain
Monolithic Construction
Complementary to BD676, 676A, 678, 678A, 680, 680A, 682
BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803
These Devices are Pb−Free and are RoHS Compliant*
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS, 40 WATTS
COLLECTOR 2, 4
BASE 3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
Collector−Base Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
45
60
80
100
V
CBO
45
60
80
100
V
EBO
I
C
I
B
P
D
40
0.32
T
J
, T
stg
– 55 to + 150
W
W/°C
°C
BD6xx/BD6xxA = Device Code
x = 75, 77, 79, 81
Y
= Year
WW
= Work Week
G
= Pb−Free Package
5.0
4.0
1.0
Vdc
Adc
Adc
YWW
BD6xxG
YWW
BD6xxAG
Vdc
TO−225
CASE 77−09
STYLE 1
1 2
3
Value
Unit
Vdc
EMITTER 1
MARKING DIAGRAMS
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
3.13
Unit
°C/W
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 15
Publication Order Number:
BD675/D

BD675 Related Products

BD675 BD677 BD677A
Description Medium Power NPN Darlington Bipolar Power Transistor, TO-225, 500-BLKBX Darlington Transistors 4A 60V Bipolar Darlington Transistors 4A 60V 40W NPN
Is it lead-free? Contains lead Contains lead Contains lead
package instruction PLASTIC, CASE 77-09, 3 PIN PLASTIC, CASE 77-09, 3 PIN PLASTIC, CASE 77-09, 3 PIN
Reach Compliance Code not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 4 A 4 A 4 A
Collector-emitter maximum voltage 45 V 60 V 60 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 750 750 750
JEDEC-95 code TO-225AA TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 10 MHz 2 MHz 2 MHz
Brand Name onsemi - ON Semiconductor
Contacts 3 - 3
Manufacturer packaging code 77-09 - 77-09
JESD-609 code e0 e0 -
Maximum operating temperature 150 °C 150 °C -
Peak Reflow Temperature (Celsius) 235 NOT SPECIFIED -
Maximum power dissipation(Abs) 40 W 40 W -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
Maximum time at peak reflow temperature 30 NOT SPECIFIED -
Maker - ON Semiconductor ON Semiconductor
Maximum power consumption environment - 40 W 40 W
VCEsat-Max - 2.5 V 2.8 V

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