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BZX84J-B13115

Description
Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 40V
Categorysemiconductor    Discrete semiconductor   
File Size671KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 40V

BZX84J-B13115 Parametric

Parameter NameAttribute value
Product CategoryZener Diodes
ManufacturerNXP
RoHSDetails
Vz - Zener Voltage13.3 V
Mounting StyleSMD/SMT
Package / CaseSOD-323
Pd - Power Dissipation550 mW
Voltage Tolerance2 %
Voltage Temperature Coefficient11 mV/K
Zener Current100 nA
Zz - Zener Impedance10 Ohms
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Test Current5 mA
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height0.7 mm
Ir - Reverse Current100 nA
Length1.7 mm
ProductZener Diode
Factory Pack Quantity3000
Termination StyleSMD/SMT
Vf - Forward Voltage1.1 V
Width1.25 mm
Unit Weight0.000363 oz
BZX84J series
Single Zener diodes
Rev. 2 — 1 August 2011
Product data sheet
1. Product profile
1.1 General description
General-purpose Zener diodes in a SOD323F (SC-90) very small and flat lead
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Non-repetitive peak reverse power
dissipation:
40 W
Total power dissipation:
550 mW
AEC-Q101 qualified
Small plastic package suitable for
surface-mounted design
Wide working voltage range: nominal
2.4 V to 75 V (E24 range)
Two tolerance series:
2
% and
5
%
Low differential resistance
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
ZSM
[1]
[2]
Quick reference data
Parameter
forward voltage
non-repetitive peak reverse
power dissipation
Conditions
I
F
= 100 mA
[1]
[2]
Min
-
-
Typ
-
-
Max
1.1
40
Unit
V
W
Pulse test: t
p
300
s;  
0.02.
t
p
= 100
s;
square wave; T
j
= 25
C
prior to surge
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
1
2
Symbol
1
2
006aaa152
[1]
The marking bar indicates the cathode.
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