®
BYT03-400
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
T
j
(max)
V
F
(max)
trr (max)
3A
400 V
150°C
1.4 V
25 ns
FEATURES AND BENEFITS
Very low conduction losses
Negligible switching losses
Low forward & reverse recovery times
s
s
s
DESCRIPTION
The BYT03-400 which is using ST’s 400V planar
technology, is specially suited for switching mode
base drive & transistor circuits.
The device, which is available in axial (DO-201AD)
package, is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
ABSOLUTE RATINGS
(limiting values)
bs
O
T
j
Symbol
V
RRM
et
l
o
ro
P
e
uc
d
)-
(s
t
b
O
so
te
le
ro
P
uc
d
s)
t(
DO-201AD
BYT03-400
Parameter
Value
400
TI = 55°C
δ
= 0.5
3
60
- 65 to +150
150
Unit
V
A
A
°C
°C
Repetive peak reverse voltage
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
I
F (AV)
I
FSM
T
stg
tp = 10ms Sinusoidal
October 2001 - Ed: 2A
1/5
BYT03-400
THERMAL PARAMETERS
Symbol
R
th(j-a)
Junction to ambient*
Parameter
Value
20
Unit
°C/W
* On infinite heatsink with 10mm lead length.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
Parameters
Reverse leakage current
Test Conditions
T
j
= 25°C
T
j
= 100°C
V
F
**
Forward voltage drop
T
j
= 25°C
T
j
= 100°C
I
F
= 3A
V
R
= V
RRM
Min.
Typ.
Pulse test: * tp = 5ms,
δ
< 2%
** tp = 380µs,
δ
< 2%
To evaluate the maximum conduction losses use the following equation:
P = 1.1 x I
F(AV)
+ 0.08 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol
bs
O
et
l
o
tfr
V
FP
trr
ro
P
e
Parameter
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
0.2
1.0
s)
t(
Max.
20
0.5
1.5
1.4
Unit
µA
mA
V
Test Conditions
T
j
= 25°C
I
F
= 0.5A I
R
= 1A
I
rr
= 0.25A
I
F
= 1A dI
F
/dt = - 15A/µs
V
R
= 30V
Min.
Typ.
16
Max.
25
Unit
ns
Reverse recovery
time
55
Forward recovery
time
Forward recovery
voltage
T
j
= 25°C
I
F
= 3A dI
F
/dt = 50A/µs
VFR = 1.1 x V
F
max
I
F
= 3A dI
F
/dt = 50A/µs
75
ns
T
j
= 25°C
7.0
V
2/5
BYT03-400
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
T
Fig. 2:
Average forward current versus ambient
temperature (δ = 0.5)
IF(av)(A)
3.5
Rth(j-a)=Rth(j-l)
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
3.0
δ
=1
2.5
2.0
1.5
1.0
Rth(j-a)=75°C/W
0.5
IF(av)(A)
δ
=tp/T
3.0
tp
Tamb(°C)
0.0
3.5
0
25
50
75
Fig. 3:
Thermal resistance versus lead length.
Fig. 4:
Relative variation of thermal impedance
junction ambient versus pulse duration (printed
circuit board epoxy FR4, Lleads = 10mm).
1.0
Rth(°C/W)
90
80
70
60
50
40
30
20
10
0
5
10
Rth(j-l)
Rth(j-a)
0.9
bs
O
100.0
10.0
1.0
Fig. 5:
Forward voltage drop versus forward current.
et
l
o
r
P
e
Lleads(mm)
15
od
uc
20
s)
t(
O
-
25
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
so
b
δ
= 0.5
δ
= 0.2
δ
= 0.1
Single pulse
Zth(j-a)/Rth(j-a)
te
le
ro
P
uc
d
100
s)
t(
125
150
T
tp(s)
1.E+00
1.E+01
δ
=tp/T
1.E+02
tp
1.E-01
1.E+03
Fig. 6:
Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
20
18
F=1MHz
Vosc=30mV
Tj=25°C
IFM(A)
Tj=100°C
(Typical values)
16
14
12
Tj=100°C
(Maximum values)
10
8
6
Tj=25°C
(Maximum values)
4
2
0
1
10
100
1000
VFM(V)
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00
VR(V)
3/5
BYT03-400
Fig. 7:
Forward recovery time versus dIF/dt (90%
confidence).
tfr(ns)
200
180
160
140
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90
100
IF=3A
Tj=100°C
Fig. 8.
Transient peak forward voltage versus
dIF/dt (90% confidence).
VFP(V)
12
IF=3A
Tj=100°C
10
8
6
4
2
dIF/dt(A/µs)
0
0
10
20
30
dIF/dt(A/µs)
40
50
Fig. 9:
Peak reverse recovery current versus
dIF/dt (90% confidence).
IRM(A)
2.5
IF=3A
VR=200V
Fig. 10:
Dynamic parameters versus junction
temperature.
%
300
2.0
1.5
Tj=100°C
1.0
0.5
0.0
1
bs
O
65
60
55
50
45
40
35
30
25
20
15
10
5
0
1
Fig. 11:
Non repetitive surge peak current versus
number of cycles.
IFSM(A)
Tj initial=25°C
et
l
o
r
P
e
10
od
dIF/dt(A/µs)
uc
Tj=25°C
s)
t(
O
-
100
250
so
b
IF=3A
dIF/dt=-50A/µs
VR=30V
te
le
ro
P
uc
d
60
70
Qrr
s)
t(
80
90
100
200
trr
150
IRM
Tj(°C)
100
25
50
75
100
125
150
Number of cycles
10
100
1000
4/5
BYT03-400
PACKAGE MECHANICAL DATA
DO-201AD
B
A
B
ØC
note 1
E
E
note 1
ØD
ØD
note 2
DIMENSIONS
REF.
A
B
C
D
E
25.40
5.30
1.30
1.25
Millimeters
Min.
Max.
9.50
Inches
Min.
1.000
0.209
0.051
0.049
NOTES
Max.
0.374
1 - The lead diameter
∅
D is not controlled over zone E
2 - The minimum length which must stay straight between the
right angles after bending is 0.59"(15 mm)
Ordering code
BYT03-400
BYT03-400RL
s
bs
O
s
s
Cooling method: by conduction (method A)
Epoxy meets UL 94,V0
Bending method: Application note AN1471.
et
l
o
ro
P
e
Marking
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
Package
DO-201AD
DO-201AD
Weight
1.16 g
1.16 g
Base qty
600
1900
Delivery mode
Ammopack
Tape & Reel
BYT03-400
BYT03-400
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
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