BLF10M6200; BLF10M6LS200
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to
1000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
869 to 894
V
DS
(V)
28
P
L(AV)
(W)
40
G
p
(dB)
20
D
(%)
28.5
ACPR
(dBc)
39
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 5 MHz.
1.2 Features and benefits
Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (700 MHz to 1000 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
1.3 Applications
RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency
range.
BLF10M6200; BLF10M6LS200
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF10M6200 (SOT502A)
1
3
2
2
3
sym112
1
BLF10M6LS200 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF10M6200
BLF10M6LS200
-
-
Description
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
[1]
Max
65
+13
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from
junction to case
Conditions
T
case
= 80
C;
P
L
= 40 W
Type
BLF10M6200
BLF10M6LS200
Typ
0.50
0.35
Unit
K/W
K/W
BLF10M6200_BLF10M6LS200#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
2 of 12
BLF10M6200; BLF10M6LS200
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C; unless otherwise specified.
Symbol Parameter
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 270 mA
V
DS
= 28 V; I
D
= 1620 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9.45 A
Min
65
1.4
1.7
-
-
-
-
-
Typ
-
2.0
2.2
-
48
-
18
Max Unit
-
2.4
2.7
4.2
-
420
-
V
V
V
A
A
nA
S
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 0.9 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 9.45 A
0.07 -
Table 7.
AC characteristics
T
j
= 25
C; unless otherwise specified.
Symbol
C
rs
Parameter
feedback capacitance
Conditions
V
GS
= 0 V; V
DS
= 28 V; f = 1 MHz
Min Typ Max Unit
-
3
-
pF
Table 8.
RF characteristics
Test signal: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test model 1;
1-64 DPCH; f
1
= 871.5 MHz; f
2
= 876.5 MHz; f
3
= 886.5 MHz; f
4
= 891.5 MHz; RF performance at
V
DS
= 28 V; I
Dq
= 1400 mA; T
case
= 25
C; unless otherwise specified; in a class-AB production test
circuit.
Symbol
G
p
D
RL
in
ACPR
Parameter
power gain
drain efficiency
input return loss
adjacent channel power ratio
Conditions
P
L(AV)
= 40 W
P
L(AV)
= 40 W
P
L(AV)
= 40 W
P
L(AV)
= 40 W
Min
19
25
-
-
Typ
20
28.5
6.4
Max
-
-
4.5
Unit
dB
%
dB
dBc
39.4 36
7. Test information
7.1 Ruggedness in class-AB operation
The BLF10M6200 and BLF10M6LS200 are enhanced rugged devices and capable of
withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
DS
= 28 V; I
Dq
= 1400 mA; P
L
= 200 W; f = 894 MHz
BLF10M6200_BLF10M6LS200#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
3 of 12
BLF10M6200; BLF10M6LS200
Power LDMOS transistor
7.2 Test circuit
V
GG
R1
C3
C7
C8
C11
C13
C17
R3
V
DD
R2
C5
L1
input
50
Ω
C1
C16
output
50
Ω
C6
C2
C15
C9
C10
C12
C14
C18
001aah523
The drawing is not to scale.
Fig 1.
Test circuit for operation at 800 MHz
C7 C8
R1
C3
C11 C13
Q1
L1
C17
R2
C5
R3
C16
C1
C2
C6
C15
C12 C14
C9 C10
C18
IN
800 -1000 MHz
V1.0
OUT
800 -1000 MHz
V1.0
001aah524
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
r
= 3.5 and thickness = 0.76 mm.
See
Table 9
for list of components.
The drawing is not to scale.
Fig 2.
Component layout
BLF10M6200_BLF10M6LS200#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
4 of 12
BLF10M6200; BLF10M6LS200
Power LDMOS transistor
Table 9.
List of components
See
Figure 1
and
Figure 2.
Component
C2
C5, C6
C7, C8, C9, C10
C13, C14
C15
C17, C18
L1
Q1
R1, R2, R3
[1]
[2]
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
ferrite SMD bead
BLF10M6200
SMD resistor
Value
68 pF
13 pF
10 pF
220 nF
4.7
F,
50 V
1.5 pF
220
F,
63 V
-
-
9.1
,
0.1 W
[2]
[1]
[1]
[1]
[1]
Remarks
solder vertically
solder vertically
solder vertically
Vishay VJ1206Y224KXB
solder vertically
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
C1, C3, C11, C12, C16 multilayer ceramic chip capacitor
American Technical Ceramics type 100B or capacitor of same quality.
TDK or capacitor of same quality.
7.3 Graphical data
7.3.1 One-tone CW
001aaj415
21
G
p
(dB)
19
η
D
G
p
60
η
D
(%)
40
17
20
15
0
40
80
120
0
160
200
P
L
(W)
V
DS
= 28 V; I
Dq
= 1400 mA; f = 881 MHz.
Fig 3.
Power gain and drain efficiency as function of output power; typical values
BLF10M6200_BLF10M6LS200#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
5 of 12
京公网安备 11010802033920号
EEWORLD
