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BSS159N-H6906

Description
Bipolar Transistors - BJT 600mA 60V PNP
Categorysemiconductor    Discrete semiconductor   
File Size195KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSS159N-H6906 Overview

Bipolar Transistors - BJT 600mA 60V PNP

BSS159N-H6906 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current230 mA
Rds On - Drain-Source Resistance1.7 Ohms
Vgs th - Gate-Source Threshold Voltage- 3.5 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge1.4 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
QualificationAEC-Q100
Channel ModeDepletion
PackagingReel
PackagingMouseReel
PackagingCut Tape
Fall Time9 ns
Forward Transconductance - Min100 mS
Height1.1 mm
Length2.9 mm
Pd - Power Dissipation360 mW
ProductMOSFET Small Signal
Rise Time2.9 ns
Factory Pack Quantity3000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time9 ns
Typical Turn-On Delay Time3.1 ns
Width1.3 mm
Unit Weight0.000282 oz
BSS159N
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with
V
GS(th)
indicator on reel
• Qualified according to AEC Q101
• 100% lead-free; Halogen-free; RoHS compliant
Product Summary
V
DS
R
DS(on),max
I
DSS,min
60
8
0.13
V
Ω
A
PG-SOT-23
3
1
2
Type
BSS159N
BSS159N
Package
PG-SOT-23
PG-SOT-23
Pb-free
Yes
Yes
Halogen-free
Yes
Yes
Tape and Reel Information
H6327: 3000 pcs/reel
H6906: 3000 pcs/reel sorted in
V
GS(th)
bands
1)
Marking
SGs
SGs
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.23 A,
V
DS
=60 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
0.23
0.18
0.92
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD Class
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
JESD22-A114 -HBM
P
tot
T
j
,
T
stg
T
A
=25 °C
±20
0(<250V)
0.36
-55 ... 150
55/150/56
V
W
°C
see table on next page and diagram 11
Rev. 2.2
page 1
2009-07-29

BSS159N-H6906 Related Products

BSS159N-H6906 BSS159N-L6327 BSS159NH6327XT
Description Bipolar Transistors - BJT 600mA 60V PNP MOSFET N-Ch 60V 230mA SOT-23-3 MOSFET N-Ch 60V 230mA SOT-23-3
Product Category MOSFET - MOSFET
Manufacturer Infineon - Infineon
RoHS Details - Details
Technology Si - Si
Mounting Style SMD/SMT - SMD/SMT
Package / Case SOT-23-3 - SOT-23-3
Number of Channels 1 Channel - 1 Channel
Transistor Polarity N-Channel - N-Channel
Vds - Drain-Source Breakdown Voltage 60 V - 60 V
Id - Continuous Drain Current 230 mA - 230 mA
Rds On - Drain-Source Resistance 1.7 Ohms - 1.7 Ohms
Vgs th - Gate-Source Threshold Voltage - 3.5 V - - 3.5 V
Vgs - Gate-Source Voltage 20 V - 20 V
Qg - Gate Charge 1.4 nC - 1.4 nC
Minimum Operating Temperature - 55 C - - 55 C
Maximum Operating Temperature + 150 C - + 150 C
Configuration Single - Single
Qualification AEC-Q100 - AEC-Q100
Channel Mode Depletion - Depletion
Packaging Cut Tape - Cut Tape
Fall Time 9 ns - 9 ns
Forward Transconductance - Min 100 mS - 100 mS
Height 1.1 mm - 1.1 mm
Length 2.9 mm - 2.9 mm
Pd - Power Dissipation 360 mW - 360 mW
Product MOSFET Small Signal - MOSFET Small Signal
Rise Time 2.9 ns - 2.9 ns
Factory Pack Quantity 3000 - 3000
Transistor Type 1 N-Channel - 1 N-Channel
Typical Turn-Off Delay Time 9 ns - 9 ns
Typical Turn-On Delay Time 3.1 ns - 3.1 ns
Width 1.3 mm - 1.3 mm
Unit Weight 0.000282 oz - 0.000282 oz
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