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BUK7524-55127

Description
MOSFET BUK7524-55/SOT78/RAILH//
CategoryDiscrete semiconductor    The transistor   
File Size53KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK7524-55127 Overview

MOSFET BUK7524-55/SOT78/RAILH//

BUK7524-55127 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresESD PROTECTION
Avalanche Energy Efficiency Rating (Eas)80 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage55 V
Maximum drain current (ID)45 A
Maximum drain-source on-resistance0.024 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)180 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Philips Semiconductors
Product specification
TrenchMOS™ transistor
Standard level FET
GENERAL DESCRIPTION
N-channel enhancement mode
standard level field-effect power
transistor in a plastic envelope using
’trench’ technology. The device
features very low on-state resistance
and has integral zener diodes giving
ESD protection up to 2kV. It is
intended for use in automotive and
general
purpose
switching
applications.
BUK7524-55
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 10 V
MAX.
55
45
103
175
24
UNIT
V
A
W
˚C
mΩ
PINNING - TO220AB
PIN
1
2
3
tab
gate
drain
source
drain
DESCRIPTION
PIN CONFIGURATION
tab
SYMBOL
d
g
s
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
- 55
MAX.
55
55
16
45
31
180
103
175
UNIT
V
V
V
A
A
A
W
˚C
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor
voltage, all pins
CONDITIONS
Human body model
(100 pF, 1.5 kΩ)
MIN.
-
MAX.
2
UNIT
kV
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
in free air
TYP.
-
60
MAX.
1.45
-
UNIT
K/W
K/W
January 1997
1
Rev 1.000

BUK7524-55127 Related Products

BUK7524-55127 934045180127 BUK7524-55,127
Description MOSFET BUK7524-55/SOT78/RAILH// 45A, 55V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN MOSFET N-CH 55V TO220AB
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknown unknown
Other features ESD PROTECTION ESD PROTECTION ESD PROTECTION
Avalanche Energy Efficiency Rating (Eas) 80 mJ 80 mJ 80 mJ
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 55 V 55 V 55 V
Maximum drain current (ID) 45 A 45 A 45 A
Maximum drain-source on-resistance 0.024 Ω 0.024 Ω 0.024 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 180 A 180 A 180 A
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Base Number Matches 1 1 1
ECCN code EAR99 EAR99 -
Certification status Not Qualified - Not Qualified
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