For
BSZ060NE2LS
Product Summary
25
V
GS
=10 V
V
GS
=4.5 V
I
D
6
8.1
40
A
V
mW
OptiMOS
TM
Power-MOSFET
Features
• Optimized for high performance Buck converter (Server,VGA)
V
DS
• Very Low FOM
QOSS
for High Frequency SMPS
• Low FOM
SW
for High Frequency SMPS
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC
1)
for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
R
DS(on),max
PG-TSDSON-8
(fused leads)
Type
BSZ060NE2LS
Package
PG-TSDSON-8 (fused leads)
Marking
060NE2L
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=4.5 V,
T
A
=25 °C,
R
thJA
=60 K/W
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
1)
2)
Value
40
32
40
28
Unit
A
12
160
20
16
±20
mJ
V
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=20 A,
R
GS
=25
W
J-STD20 and JESD22
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Rev. 2.2
page 1
2013-02-12
BSZ060NE2LS
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=60 K/W
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T
j
,
T
stg
Value
26
2.1
-55 ... 150
55/150/56
°C
Unit
W
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
Device on PCB
R
thJC
R
thJA
6 cm
2
cooling area
4)
-
-
-
-
4.9
60
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=250 µA
V
DS
=25 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=25 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=20 A
V
GS
=10 V,
I
D
=20 A
Gate resistance
Transconductance
4)
25
1.2
-
-
-
0.1
-
2
1
V
µA
-
-
-
-
0.25
10
10
6.5
5.0
0.5
67
100
100
8.1
6.0
1.0
-
W
S
nA
mW
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
34
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 2.2
page 2
2013-02-12
BSZ060NE2LS
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=12 V,
V
GS
=10 V,
I
D
=30 A,
R
G
=1.6
W
V
GS
=0 V,
V
DS
=12 V,
f
=1 MHz
-
-
-
-
-
-
-
670
290
31
2.5
2.2
11
1.8
890
390
-
-
-
-
-
pF
ns
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=12 V,
I
D
=30 A,
V
GS
=0 to 10 V
V
DS
=0.1 V,
V
GS
=0 to 4.5 V
V
DD
=12 V,
V
GS
=0 V
V
DD
=12 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
-
-
-
-
-
-
-
1.9
1.1
1.1
2.0
4.4
2.9
9.1
2.6
1.4
1.7
2.8
5.9
-
12
nC
V
nC
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
3.8
5.8
5.1
7.7
I
S
I
S,pulse
V
SD
-
T
C
=25 °C
-
V
GS
=0 V,
I
F
=20 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
0.87
25
100
1
A
V
Reverse recovery charge
5)
Q
rr
-
5
-
nC
See figure 16 for gate charge parameter definition
Rev. 2.2
page 3
2013-02-12
BSZ060NE2LS
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
)
parameter:
V
GS
30
45
40
25
35
20
30
25
20
15
10
5
5
0
0
40
80
120
160
0
0
40
80
120
160
4.5 V
10 V
P
tot
[W]
15
10
T
C
[°C]
I
D
[A]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
limited by on-state
resistance
1 µs
0.5
10
2
10 µs
100 µs
10 ms
1
0.2
I
D
[A]
1 ms
10
1
Z
thJC
[K/W]
0.1
0.05
0.02
0.01
DC
0.1
single pulse
10
0
10
-1
10
-1
10
0
10
1
10
2
0.01
0
0
0
0
0
0
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 2.2
page 4
2013-02-12
BSZ060NE2LS
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
160
10 V
5V
4.5 V
4V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
12
140
10
3.2 V
120
3.5 V
8
R
DS(on)
[mW]
100
4V
4.5 V
I
D
[A]
80
3.5 V
6
8V
5V
7V
10 V
60
3.2 V
4
40
3V
2.8 V
2
20
0
0
1
2
3
0
0
10
20
30
40
50
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
100
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
140
120
80
100
60
80
g
fs
[S]
40
20
150 °C
25 °C
I
D
[A]
60
40
20
0
0
1
2
3
4
5
0
0
40
80
120
160
V
GS
[V]
I
D
[A]
Rev. 2.2
page 5
2013-02-12
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